Oct. 2024, ADMETA Poster Award 2023, The Japan Society of Applied Physics
Gento Toyoda;Satoshi Yamauchi

1989, Materials Research Society Graduate Student Awards

Selective Cu growth on fine structures using a Cu-iodide precursor
Gento Toyoda; Takashi Fuse; Satoshi Yamauchi, Corresponding, Abstract

Selective Cu deposition by CVD using copper(I)-iodide (CuI) as the precursor is applied on 0.5 μm- and 1.0 μm-pitch Cu-lines/SiO₂ -spaces (L/S) at 370 °C. A confocal laser microscope suggests that the Cu is selectively deposited on the Cu line, not on the space. The average Cu height provided by the cross-sectional profile across the 1.0 μm-pitch L/S, which is linearly increased with total CuI supply, evaluates that the dissociation efficiency of CuI is about 23%. Surface scanning electron microscopy and energy dispersive X-ray spectroscopy clearly show the selective deposition of Cu, but surface roughness on the deposited Cu is increases with the Cu-height. The feature of surface roughness is discussed on the coalescent Cu line at the deposition temperature and the rate-limiting step in the CVD. The selective Cu deposition is also performed on 0.5 μm-pitch L/S, in which the deposition rate is similar but the surface is rougher than on the 1.0 μm-wide line., IOP Publishing
Japanese Journal of Applied Physics, 03 Jun. 2024, [Reviewed]

〔Major achievements〕Study of Cu-growth feature by selective low-pressure chemical vapor deposition using a CuI precursor
Gento Toyoda; Hikari Kikuchi; Satoshi Yamauchi; Tatsuya Joutsuka; Takashi Fuse; Yusuke Kubota, Corresponding, 日本応用物理学会
Japanese Journal of Applied Physics, 19 Apr. 2023, [Reviewed]

Synthesis, characterization, and formation of self-assembled monolayers of a phosphonic acid bearing a vinylene-bridged fluoroalkyl chain
Tomohiro Shirai; Satoshi Yamauchi; Hikari Kikuchi; Hiroki Fukumoto; Hiroto Tsukada; Tomohiro Agou, Elsevier
Applied Surface Science, 01 Mar. 2022, [Reviewed]

Facet Dependence of Photocatalytic Activity in Anatase TiO2: Combined Experimental and DFT Study
T. Joutsuka; H. Yoshinari; S. Yamauchi, Last, The Chemical Society of Japan
Bulletin of the Chemical Society of Japan, Jan. 2021, [Reviewed]

Low-pressure chemical vapor deposition of Cu on Ru using CuI as precursor
Taiji Nishikawa; Kensuke Horiuchi; Tatsuya Joutsuka; Satoshi Yamauchi, Last, Elsevier
Journal of Crystal Growth, 27 Aug. 2020, [Reviewed]

Low-pressure chemical vapor deposition of Cu on Ru substrate using CuI: Ab initio calculations
Tatsuya Joutsuka; Satoshi Yamauchi, Last, Elsevier
Chemical Physics Letters, 20 Jan. 2020, [Reviewed]

Selective Cu-deposition by LPCVD using CuI　　　　　　　　　　　　　　　
T. Nishikawa; S. Yamauchi
Extended Abstract of ADMETA plus 2016 Asian Session, 20 Oct. 2016, [Reviewed], [Invited]

Enhanced Photo-Induced Property of LPCVD-TiO2 Layer on PCVD-TiOx Initial Layer
Satoshi Yamauchi; Keisuke Yamamoto; Sakura Hatakeyama
Journal of Materials Science and Chemical Engineering, 18 Jun. 2015, [Reviewed]

Drastic Resistivity Reduction of CVD-TiO2 Layers by Post-Wet-Treatment in HCl Solution
Satoshi Yamauchi; Kazuhiro Ishibashi; Sakura Hatakeyama
Journal of Crystallization Process and Technology, 16 Jan. 2015, [Reviewed]

Low Resistive TiO Deposition by LPCVD Using TTIP and NbF5 in Hydrogen-Ambient
Satoshi Yamauchi; Kazuhiro Ishibashi; Sakura Hatakeyama
Journal of Crystallization Process and Technology, 12 Jan. 2015, [Reviewed]

Low Pressure Chemical Vapor Deposition of TiO2 Layer in Hydrogen-Ambient
Satoshi Yamauchi; Kazuhiro Ishibashi; Sakura Hatakeyama
Journal of Crystallization Process and Technology, 07 Oct. 2014, [Reviewed]

Low Pressure Chemical Vapor Deposition of Nb and F Co-Doped TiO2 Layer
Satoshi Yamauchi; Shouta Saiki; Kazuhiro Ishibashi; Akie Nakagawa; Sakura Hatakeyama
Journal of Crystallization Process and Technology, 03 Apr. 2014, [Reviewed]

Nondestructive evaluation of crystallized-particle size in lactose-powder by terahertz time-domain spectroscopy
Satoshi Yamauchi; Sakura Hatakeyama; Yoh Imai; Masayoshi Tonouchi, Transmission-type terahertz time-domain spectroscopy is applied to evaluate crystallized lactose particle of size below 30 mu m, which is far too small compared to the wavelength of incident terahertz (THz)-wave. The THz-absorption spectrum of lactose is successfully deconvoluted by Lorentzian to two spectra with peaks at 17.1 cm(-1) (0.53 THz) and 45.6 cm(-1) (1.37 THz) derived from alpha-lactose monohydrate, and a spectrum at 39.7 cm(-1) (1.19 THz) from anhydrous beta-lactose after removal of the broad-band spectrum by polynomial cubic function. Lactose is mainly crystallized into alpha-lactose monohydrate from the supersaturated solution at room temperature with a small amount of anhydrous beta-lactose below 4%. The absorption feature is dependent on the crystallized particle size and the integrated intensity ratio of the two absorptions due to alpha-lactose monohydrate is correlated in linear for the size. (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI., SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
OPTICAL ENGINEERING, Mar. 2014, [Reviewed]

Plasma-assisted Chemical Vapor Deposition of Titanium Oxide layer at Room-Temperature
S. Yamauchi; H. Suzuki; R. Akutsu
Journal of Crystallization Process and Technology, 08 Jan. 2014, [Reviewed]

Remote-plasma-assisted deposition of pentacene layer using atomic-hydrogen
S. Yamauchi; T. Minakuchi; M. Onodera
Journal of Crystallization Process and Technology, 02 Jan. 2014, [Reviewed]

Terahertz time-domain spectroscopy to identify and evaluate anomer in lactose
S. Yamauchi; S. Hatakeyama; Y. Imai; M. Tonouchi
American Journal of Analytical Chemistry, 16 Dec. 2013, [Reviewed]

ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior
Satoshi Yamauchi; Yoh Imai
Crystal Structure Theory and Applications, 25 Sep. 2013, [Reviewed]

Evaluation of interfacial water on super-hydrophilic surface by THz-TDS
S. Yamauchi; Y. Imai; M. Tonouchi, Transmission-type THz-TDS was applied to characterize water on super-hydrophilic surface of anatase-TiO2 layer fabricated by plasma-assisted deposition. Absorption coefficient of water with the thickness of 300 mu m on the layer was in good agreement to that of free water before the surface was converted to the super-hydrophilicity but decreased on the super-hydrophilic surface after UV-irradiation. The complex dielectric constant was fitted by double Debye-model and could be explained by a model of double water layers consisting of free water and interfacial water near the super-hydrophilic surface after lJV-irradiation. The slow relaxation time of 37 ps in the interfacial layer with the thickness of 45 mu m was significantly large comparing to the value of 7.7 ps in free water., IEEE
The 38th Inte'l Conf. on Infrared, Millimeter, and Terahertz waves, proceeding, 02 Sep. 2013, [Reviewed]

Measurements of Nonlinear Refractive Index ,of Optical Fiber by Using Multiple Interference in OFRR　　　　　　　　　　　　　　　
Yoh Imai; Hirohisa Yokota; Satoshi Yamauchi
Photonics and Optoelectronics, Jul. 2013, [Reviewed]

ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Crystallographic Behavior　　　　　　　　　　　　　　　
Satoshi Yamauchi; Yoh Imai
Crystal Structure Theory and Applications, Jun. 2013

Plasma-Assisted Chemical Vapor Deposition of TiO2 Thin,Films for Highly Hydrophilic Performance　　　　　　　　　　　　　　　
Satoshi Yamauchi; Yoh Imai
Crystal Structure Theory and Applications, Mar. 2013, [Reviewed]

Terahertz Waveguide Using Triangle Bundle Structure of Polymer Tubes
Yoh Imai; Satoshi Yamauchi; Hirohisa Yokota; Masayoshi Tonouchi, A new terahertz fiber using polymer tube bundle with triangular structure is proposed and analyzed. An optimum tube parameters in bundle structure for low loss waveguide is clarified., IEEE
2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2013, [Reviewed]

Determination of stereoisomer in sugars by THz-TDS
Satoshi Yamauchi; Yoh Imai; Hirohisa Yokota; Masayoshi Tonouchi, Transmission-type terahertz time-domain spectroscopy (THz-TDS) using dipole-antennas on LT-GaAs layers as THz-emitter and detector with fs-fiber laser as the excitation light source was applied to determine the stereoisomer of sugars in carefully controlled environment with low humidity below 5% at 20 degrees C. Commercially available alpha-D-lactose including about 4% anomer and beta-D-lactose including below 30% anomer were used as stereoisomer samples. The absorption spectra of compounds by the alpha-D-and beta-D-lactose powders with various ratios were successively deconvoluted to four spectra by Lorentzian and dependent on the composition ratio. Integrated absorptions due to alpha-D-lactose and beta-D-lactose determined the decreasing rate (r(alpha)) and the increasing rate (r(beta)) for the composition ratio of the beta-D-lactose powder, because the intensities were linearly dependent on the composition ratio. The net-composition ratio of alpha-lactose and beta-lactose in the compounds was precisely evaluated by the ratio of the integrated intensities and the value of r(beta) / r(alpha), for example, the anomer-contents in commercially available alpha-D-lactose and beta-D-lactose powders were disclosed as 3.9% and 29.1%, respectively. The demonstrated results indicate that THz-TDS is so useful not only for precise qualitative-analysis but also for precise quantitative-analysis of stereoisomer in sugars with partially different molecular structure such as lactose., SPIE-INT SOC OPTICAL ENGINEERING
The 22nd General Congress of the International Commission for Optics (ICO-22), Proc. of SPIE, Aug. 2011, [Reviewed]

Estimation of Fiber Parameters by Using OFRR Nonlinear Dynamics
Yoh Imai; Satoshi Yamauchi; Hirohisa Yokota, In this paper, a new method for measuring the nonlinear refractive index by using the nonlinear dynamics generated in optical fiber ring resonator (OFRR) is proposed. In OFRRs, input light and circulated light components are added in succession, and then, result in forming an interference output. The OFRR output exhibits nonlinear dynamics such as a chaotic state due to the optical Kerr effect, as the input light power increases. In the bifurcation diagram, the output power indicates peaks in the input power range lower than the bifurcation point at which the output changes from stable to periodic state. It is found that the input power at the peak shifts, dependent on the nonlinear refractive index. The nonlinear refractive index can be estimated by applying the measured input power giving the peak point to the numerical relationship between the input power and the nonlinear refractive index. In experiments the nonlinear refractive index of the two pure silica core fibers with different cutoff wavelength was estimated as n(2)=0.97x10(-22)[m(2)/V-2] and n(2)=1.06x10(-22)[m(2)/V-2] which are in good agreement with those reported previously., SPIE-INT SOC OPTICAL ENGINEERING
22ND CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: LIGHT FOR THE DEVELOPMENT OF THE WORLD, 2011, [Reviewed]

Dielectric behavior in THz of Water influenced by alkaline- and alkali-earth-halides
S. Yamauchi; K. Takayama; Y. Imai; K. Takeya; M. Tonouchi, A transmission type THz-TDS was applied to study dielectric behavior of water including NaCl and MgCl2. Imaginary part of the complex dielectric constant below 1THz and the dielectric slow relaxation time were evaluated and disclosed that they are dependent on the type of salt and the concentration., IEEE
The 35th Inte'l Conf. on Infrared, Millimeter, and Terahertz waves, proceeding, 05 Sep. 2010, [Reviewed]

THz-TDS study for water analysis on aqueous solution of alkali and alkaline-earth halides　　　　　　　　　　　　　　　
T. Suzuki; K. Takayama; S. Yamauchi; Y. Imai; M. Tonouchi
2nd International Workshop on Terahertz Technology,Extended Abstracts, 30 Nov. 2009, [Reviewed]

Coherence effect on decryption characteristics in message modulation type chaos secure communication systems using fiber-optic ring resonators
Yoh Imai; Satoshi Yamauchi; Hirohisa Yokota; Takehito Suzuki; Kansuke Tsuji, We numerically investigated the dependence of the decryption characteristics in a message modulation type chaos secure communication system using optical fiber ring resonators (OFRRs) on the coherence condition of carrier light. Since the output dynamics of OFRRs were formed on the basis of interference phenomenon among the circulated components in OFRRs, the coherence condition of input light affected inherently the OFRR output dynamics, resulting in the decryption characteristics. It was found that the decryption characteristics degraded as coherence length increased, i.e., as the spectral width of the input light decreased. The decryption characteristics also grew worse as the parameter differences between the transmitter and the receiver became larger. (C) 2009 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
OPTICS COMMUNICATIONS, 28 Jul. 2009, [Reviewed]

Proposal for nonlinear refractive index measurement by using spectral ratio in modulated OFRR dynamics
M. Mumuro; Y. Imai; S. Yamauchi; K. Suzuki, A novel method for measuring the nonlinear refractive index of an optical fiber using a spectral ratio between the modulation frequency and a harmonic component in a modulated optical fiber ring resonator (OFRR) is proposed. The spectral ratio between the modulation frequency and the 2nd-harmonics generated by phase-modulation through the OFRR is increased with increasing the input light power and has peaks above 5 W input power, however, the peaks was shifted to the lower input power below 1 W by averaging taken into account of the phase distribution. A experimental setup consisted of an OFRR system and an Ar-laser as a pump light source was used to determine the nonlinear refractive index of an optical fiber. In the experimental results, the peaks of the spectral ratio as a function of the input power was found out at 0.8 W and 0.45 W of the input power corresponding to the input source line at 488.0 nm and 514.5 nm, respectively. The profile was similar to that obtained by the simulation and the nonlinear refractive index of a optical fiber was determined as 1.0 X 10(-22) m(2)/V-2 by a relationship between the input power giving the peak and the nonlinear refractive index. (C) 2007 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
Optics Communications, Feb. 2008, [Reviewed]

Plasma-assisted epitaxial growth of nitrogen-doped and high-quality ZnO thin films
S. Yamauchi, Plasma-assisted epitaxy has been demonstrated as one possible process for the ZnO growth, which is processed at low temperatures below 400 degrees C using oxygen-plasma excited by radio-frequency power at 13.56MHz. This paper is focused on the plasma-assisted epitaxial growth of ZnO layer concerned with shallow acceptor doping using N-2+O-2 gas plasma and high-quality undoped-ZnO growth using a novel buffer layer consisted of very thin (below 1nm-thick) strained Ti2O3 on A-sapphire. Donor-acceptor pair emission was clearly observed at 3.273eV in low temperature photoluminescence spectrum of nitrogen-doped PAE-ZnO layer grown in Zn-rich supply condition and the activation energy of the shallow acceptor was determined about 132meV. The doping feature of nitrogen related with the oxygen vacancy is also expected by the photoluminescence study. High-quality ZnO layer with smooth surface including fine hexagonal pyramids was grown on the buffer layer at the growth temperature as low as 340 degrees C with the photoluminescence spectrum dominated by free-exciton emissions at 10K. RHEED observations indicated the ZnO on the thin buffer layer was epitaxially grown toward c-axis with an in-plane relation ship of [-12-10]ZnO//[1-104]Al2O3 without any rotational domains., SPIE-INT SOC OPTICAL ENGINEERING
SPIE Photonics West 2008, Proceedings of SPIE, Jan. 2008, [Reviewed], [Invited]

Surface treatment of Si using hydrogen-plasma to improve optoelectronic property of ZnO on (111)Si
Satoshi Yamauchi; Hirokatsu Kawasaki; Takashi Hariu, Hydrogen-terminated (111)Si was treated by Zn-contained hydrogen plasma at low temperatures ranging from 200-500 degrees C prior to ZnO growth at 400 degrees C by plasma-assisted epitaxy using oxygen gas plasma excited by rf-power at 13.56 MHz. Spot pattern corresponding to c-ZnO surface was observed by reflection high-energy electron diffraction from the layer grown on the Si treated by Zn-contained hydrogen gas plasma at 500 degrees C, in contrast to the ring-pattern from the layers on the Si non-treated or treated at lower temperatures. Optoelectronic property was significantly improved by the surface treatment at 500 degrees C, because the photoluminescence spectra of the ZnO layers grown on the Si treated at 500 degrees C showed strong and sharp bandedge emissions due to bound exciton accompanied with free-exciton emission without significant deep-level emissions at 10 K, while the weak bandedge emissions and green emission due to deep level can be observed from the layers on the substrates non-treated or treated below 400 degrees C in the plasma., JAPAN SOC APPLIED PHYSICS
Jpn.J.Appl.Phys., 09 Nov. 2005, [Reviewed]

A novel buffer layer using titanium-oxide for ZnO epitaxial growth on sapphire
Toru Miyamura; Satoshi Yamauchi
Ext.Abstract of the 2005 int'l Conf. on Solid State Devices and Materials, 13 Sep. 2005

Photoluminescence studies of undoped and nitrogen-doped ZnO layers grown by plasma-assisted epitaxy
S. Yamauchi; Y. Goto; T. Hariu, Nitrogen-doped ZnO layers grown on C-sapphire at 400degreesC by plasma-assisted epitaxy in oxygen and nitrogen mixed gas plasma were studied by photoluminescence measurements comparing to undoped ZnO layers grown in pure oxygen plasma. A new luminescence was observed around 3.27 eV with phonon-replicas at 20 K and we concluded that they are due to shallow donor-acceptor pair emission by excitation power dependence of the peak energy. The donor and acceptor levels were assigned as shallow levels located at 40meV below conduction bandedge and 135meV above valence bandedge, respectively. It was also indicated that Zn-rich condition should be given for efficient nitrogen-acceptor doping. (C) 2003 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
J. Crystal Growth, Jan. 2004

Plasma-assisted epitaxial growth of ZnO layer on sapphire by plasma-assisted epitaxy　　　　　　　　　　　　　　　
S. Yamauchi; T. Hariu
MRS Symp. Proc., Feb. 2001

Plasma-assisted epitaxial growth of ZnO layer on sapphire
S. Yamauchi; T. Ashiga; A. Nagayama; T. Hariu, Zinc oxide thin films were epitaxially grown at 400 degrees C on C-sapphire substrates by plasma-assisted epitaxy in which elemental zinc is supplied through oxygen plasma excited by radio frequency power at 13.56 MHz. The intensity of bound exciton emission was strongly dependent on the growth rate and was drastically increased with decreasing the growth rate. Surface morphology was also roughened with increasing the growth rate. An initial layer grown with low growth rate around 1.7nm/min at 400 degrees C is quite effective in preventing the unfavorable growth and then to improve the successive growth of a thick ZnO layer with high growth rate. Photoluminescence property and surface morphology were also very much improved with suppressing poly-crystallization in this way in the thick layer grown at high growth rate around 17 nm/min on the initial layer thicker than 300 nm. (C) 2000 Elsevier Science B.V. All rights reserved., ELSEVIER SCIENCE BV
J. Crystal Growth, Jun. 2000

Suppresion of gate leakage current in n-AlGaAs/GaAs power HEMTs
A. Nagayama; S. Yamauchi; T. Hariu, Experiments of gate leakage current in double-channel n-AlGaAs/GaAs FET with SiNx film passivation indicated that the gate leakage current and its stability depend critically on the stoichiometry of the surface. The content of NH4 OH in the etching solution prior to the SiNx film deposition and the NH3/SiH4 gas content ratio, particularly at the initial stage of plasma-CVD SiNx deposition, should be selected to minimize the surface state density of possible antisite defects. Extremely low gate leakage currents of 50 nA/mm have been obtained with an improved process, which is useful to realize low-distortion FET's., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
IEEE Trans. on Electron Devices, Mar. 2000

Plasma-assisted epitaxial growth of ZnO layer on sapphire　　　　　　　　　　　　　　　
S. Yamauchi; T. Ashiga; A. Nagayama; T. Hariu, サファイア上へのＺｎＯ薄膜の成長において成長初期段階での核発生確率が小さいことに着目し、成長初期段階での制御を行うことによりＺｎＯ薄膜の結晶性の改善が可能であることを示した。
9th Int'l Conf. on II-VI Compounds, Nov. 1999

Low temperature epitaxial growth of ZnO layer by plasma-assisted epitaxy　　　　　　　　　　　　　　　
S. Yamauchi; H. Handa; A. Nagayama; T. Hairu, 酸素プラズマを用いてＺｎＯ薄膜を低温でエピタキシャル成長させることにより、膜中の酸素欠損を著しく減少させることが可能になり、良好な発光特性が得られることを示した。
Thin Solid Films, Jun. 1999

Total low temperature plasma process for epitaxial growth of compound semiconductors on Si: InSb/Si　　　　　　　　　　　　　　　
S. Yamauchi; T. Hariu; H. Ohba; K. Sawamura, Ｓｉ上へのＩｎＳｂ薄膜のヘテロエピタキシャル成長を実現するためのＳｉ表面の清浄化及び不活性化プロセスを構築し、且つ、大きな格子不整合を緩和できる初期成長層を提案し、それらを用いることによりＩｎＳｂのヘテロエピタキシャル成長を可能にした。
Thin Solid Films, May 1998

Low-temperature deposition of (Ba,Sr)TiO3 thin films for ULSI DRAM applications by the initial rf-sputtering step control
S. Takehiro; S. Yamauchi; M. Yoshimaru, A novel low temperature deposition process for (Ba,Sr)TiO3 thin films using the BST crystallization control by the initial rf-sputtering step was demonstrated The crystallization and the dielectric constant of BST films deposited at low temperature (330 degrees C) were enhanced and increased; respectively, by the low temperature process with applying rf-power to the substrates during the initial sputtering step. Moreover, the increase in the leakage current of BST films deposited at higher temperatures was prevented by this low temperature process, because the surface morphology of Ru bottom electrodes were not roughened. As a result, excellent electrical properties of BST films for giga-bit DRAMs were obtained at lower deposition temperatures than a conventional process on Ru bottom electrodes., ELECTROCHEMICAL SOCIETY INC
Proc. 6th Int'l Symp. on ULSI Science and Technology, May 1997

The simplest stacked BST capacitor for the future DRAMs using a novel low temperature growth enhanced crystallization
S. Takehiro; S. Yamauchi; M. Yoshimaru; H. Onoda, The simplest stacked capacitor with BST thinner films (about 50nm-thick) grown by a novel low temperature growth [1] was demonstrated. The storage node without sidewall spacer was constructed by thinner Ru-layer, sputtered-TiN diffusion barrier, TiSix electrical contact layer and poly-Si plug. The low temperature BST growth prevented the leakage current increase of BST films as thin as 25nm. Therefore, 50% step coverage BST-capacitor was performed as sidewall-less simple stacked capacitors with large storage charge., JAPAN SOCIETY APPLIED PHYSICS
Symp. VLSI Technology Digest, May 1997

High reliable lead-zirconate- titanate growth using reactive sputtering and rapid thermal annealing
S. Yamauchi; M. Yoshimaru, High reliable lead-zirconate-titanate (PZT) thin films were produced by reactive sputter-deposition and rapid themal annealing (RTA). Several important parameters for the film growth were investigated such as growth temperature, substrate-biasing, target-substrate gap and film stoichiometry. X-Ray Diffraction and Scanning Electron Microscopy revealed a single (111)orientation and smooth surface of the controlled films, respectively. Measurement of electric properties of the controlled 100nm-thick PZT films revealed low leakage current (about 2x10(-7)A/cm(2) at 3.5V) and without fatigue after 10(12) cycle bipolar switchings., TAYLOR & FRANCIS LTD
Integrated Ferroelectrics, Feb. 1997

High reliable PZT growth using conventional reactive sputtering and rapid thermal annealing　　　　　　　　　　　　　　　
S. Yamauchi; M. Yoshimaru, 反応性スパッタ法によるＰＺＴの低温成長と急速熱処理により形成した強誘電体ＰＺＴ薄膜が優れた膜特性を有することを示した。
Abstract 8th ISIF, Mar. 1996

Growth of [111]-oriented lead zirconate titanate thin film with smooth surface to improve electrical properties
S. Yamauchi; M. Yoshimaru, [111]-Oriented lead zirconate titanate (PZT) films with smooth surfaces were successfully grown on (111)-oriented polycrystalline Pt substrates after in-situ Ar-plasma cleaning by low-temperature reactive sputtering and rapid thermal annealing. The Pb composition was stoichiometrically controlled not only for total composition but also in the depth direction by low-temperature reactive sputtering. A (111)-oriented perovskite-phase PZT film with a very smooth surface was then obtained by rapid thermal annealing. The leakage current of quasi-epitaxial PZT films was markedly reduced to 10(-7) A/cm(2) and the equivalent SiO2 layer thickness of around 0.4 nm was obtained for the fatigue-free PZT films thinner than 100 nm., JAPAN SOC APPLIED PHYSICS
Jpn. J. Appl. Phys., Feb. 1996

Quasi-epitaxial growth of PZT thin film tofabricate capacitor suitable for 256Mb DRAM and beyond
S. Yamauchi; M. Yoshimaru, 表面処理されたＰｔ上に反応性スパッタ法により低温で膜組成と分布を精確に制御したＰＺＴ層を形成し急速熱処理により再結晶化させることによりＰｔの原子配列に沿った原子配列のＰＺＴ層を形成でき、２５６Ｍｂ以上の集積度のＤＲＡＭに適用可能であることを示した。
Ext. Abstract SSDM, Aug. 1995

Plasma-cracked supply of group V and group VI elements for low temperature epitaxy
T. Hariu; S. Yamauchi; S. F. Fang; T. Ohshima; T. Hamada, Plasma-cracking of group V (N, As, Sb) and group VI (Se) molecules into excited atoms has been confirmed by optical emission spectroscopy. The larger increase of density of group V elements than that of group III elements with increasing RF power can explain the shift of optimum V/III supply ratio for the epitaxial growth of III-V compounds. Plasma-cracking of nitrogen molecules in nitrogen-hydrogen mixed plasma through Penning effect is useful to grow better quality p-type ZnSe layers., ELSEVIER SCIENCE BV
J. Cryst. Growth, Mar. 1994

Crystallographic and electrical studies of sputtered lead-zirconate-titanate (PZT) thin films treated by rapid thermal annealing　　　　　　　　　　　　　　　
S. Yamauchi; M. Yoshimaru; M. Ino, 反応性スパッタ法によるパイロクロア相ＰＺＴの低温成長及び急速熱処理によるペロブスカイト相への再結晶化が強誘電体ＰＺＴ薄膜の形成に非常に有効であることを示した。
Proc. Int'l Conf. AMDP, Feb. 1994

Electrical and crystallographic properties of sputtered- Pb(Zr,Ti)O3 films treated by rapid thermal annealing
S. Yamauchi; H. Tamura; M. Yoshimaru; M. Ino, Pyrochlore-phase lead-zirconate-titanate (PZT) films were prepared by rf-magnetron sputtering using a multi-element metal target at 400-degrees-C. These films were crystallized to the perovskite phase by rapid thermal annealing (RTA) at 600-degrees-C for a few minutes. The RTA-treated PZT films had not only extremely smooth surfaces but also tenfold stronger X-ray diffraction peak intensities of the perovskite structure than those of furnace-annealed films which had with rough undulation. The electrical properties of RTA-treated films indicated good ferroelectric properties. The remanent polarization and coercive field of the 100 nm-thick RTA-treated film were 15 muC/cm2 and 67 kV/cm, respectively. Fatigue measurements with alternating +/- 3 V pulses showed that the film was stable up to 10(9) cycles., JAPAN J APPLIED PHYSICS
Jpn. J. Appl. Phys., Sep. 1993

Plasma-process for substrate surface-cleaning and successive epitaxial growth of semiconductors　　　　　　　　　　　　　　　
T. Hariu; S. Yamauchi; T. Ohshima; H. Takei; T. Hamada, プラズマ・アシステド・エピタキシー法がＳｉ表面の清浄化及びＳｉ上への化合物半導体の低温エピタキシャル成長に有効であることを示した。
Proc. APCPST. CJSPC and CCPST, Feb. 1992

Effect of enhanced reactivity in plasma-assisted epitaxial growth of ZnSe　　　　　　　　　　　　　　　
S. Yamauchi; T. Hariu; S. Ono, ＺｎＳｅの成長の際に用いる水素及び水素・窒素混合ガスプラズマ中で生成される励起種をプラズマ発光分光分析により検出し、プラズマ励起窒素が浅いアクセプタとして導入されることを示した。
J. Cryst. Growth, Aug. 1991

Interface characterization of ZnSe/GaAs heterojunctions
T. Hariu; S. Yamauchi; H. Tanaka; S. Ono, ZnSe GaAs heterojunctions were fabricated by a low-temperature plasma-assisted totally dry process consisting of removal of the native oxide layer in a hydrogen plasma, surface treatment in hydrogen plasma containing Se or nitrogen and epitaxial growth of ZnSe in the same chamber. The surface states consist of defect-related surface states superposed on a disorder-induced U-shaped distribution. The energetic position and the density of defect-related surface states, which was clearly revealed when the density of surface states with U-shaped distribution was reduced, depends upon the surface treatment and also upon the GaAs wafers used. © 1991.
Appl. Surf. Sci., Jul. 1991

Plasma-assisted epitaxial growth of ZnSe films in hydrogen plasma
S. Yamauchi; T. Hariu, 水素ガスプラズマをベースとしたプラズマ・アシステド・エピタキシー法により高純度ＺｎＳｅ、低抵抗ｎ型ＺｎＳｅ薄膜の成長が可能であることを示し、且つ水素・窒素混合ガスプラズマを用いることにより浅いアクセプターの導入が可能であることを示した。, MATERIALS RESEARCH SOC
MRS Symp. Proc., Dec. 1990

PLASMA-ASSISTED SURFACE-TREATMENT OF GAAS FOR IMPROVED ZNSE/GAAS HETEROSTRUCTURES
S YAMAUCHI; T KITAGAKI; T HARIU, IOP PUBLISHING LTD
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, [Reviewed]

IMPORTANCE OF V III SUPPLY RATIO IN LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB BY PLASMA-ASSISTED EPITAXY
T OHSHIMA; S YAMAUCHI; T HARIU, IOP PUBLISHING LTD
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, [Reviewed]

Optical emission spectroscopy in plasma-assisted epitaxial growth of compound semiconductors　　　　　　　　　　　　　　　
T. Hariu; S. F. Fang; S. Yamauchi; T. Ohshima, プラズマ・アシステド・エピタキシー法により化合物半導体を低温エピタキシャル成長させる際にプラズマ中で生成される励起種を検出し、有効な励起種を示した。
Proc. 9th Int'l Symp. on Plasma Chemistry, Sep. 1989

Plasma-assisted surface treat- ment of GaAs for improved ZnSe/GaAs heterostructures
S. Yamauchi; T. Kitagaki; T. Hariu, ＧａＡｓの表面特性が水素・窒素混合ガスプラズマ及びＳｅを含む水素ガスプラズマにより改善できることを示した。, IOP PUBLISHING LTD
Proc. 16th Symp. on GaAs & Related Compounds, Sep. 1989

Importance of V/III supply ratio in low temperature epitaxial growth of InSb by plasma -assisted epitaxy
T. Ohshima; S. Yamauchi; T. Hariu, ＩｎＳｂの低温エピタキシャル成長におけるⅤ／Ⅲ供給比の重要性を示した。, IOP PUBLISHING LTD
Proc. 16th Symp. on GaAs & Related Compounds, Sep. 1989

ZnSe/GaAs heterointerface characterization by a new DLTS analysis　　　　　　　　　　　　　　　
T. Hariu; S. Yamauchi; T. Kitagaki; Y. Numagami, ＧａＡｓの表面準位を測定する新しいＤＬＴＳ法の提案とその方法により評価したＺｎＳｅ／ＧａＡｓ界面の特性を示した。
Defect Control in Semiconductor, Sep. 1989, [Reviewed]

Plasma-assisted atomic layer epitaxial growth of ZnSe　　　　　　　　　　　　　　　
T. Kitagaki; S. Yamauchi; T. Hariu, プラズマプロセスによりＺｎＳｅの低温原子層エピタキシャル成長が可能であることを示した。
Proc. JSAP-MRS Int'l Conf. on Electronic Materials, Aug. 1989

LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB ON GAAS
T HARIU; T OHSHIMA; S YAMAUCHI, InSb epitaxial layers were successfully grown on (100) semi-insulating GaAs at a temperature as low as 270-degrees-C by plasma-assisted epitaxy (PAE) in hydrogen plasma. Maximum mobility and minimum carrier density are obtained at a different supply ratio Sb/In for each substrate temperature and each applied rf power. The maximum mobilities obtained at different growth temperatures, however, are comparable to each other (2 - 3 x 10(4)cm2/Vs at room temperature) as long as the supply ratio is optimized and the thickness is above 2-mu-m., IOP PUBLISHING LTD
INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, [Reviewed]

The effect of hydrogen plasma on the low temperature epitaxial growth of InSb
T. Ohshima; S. Yamauchi; T. Hariu, ＩｎＳｂの低温エピタキシャル成長に水素プラズマが有効であることを実験的に検証した。, JAPAN J APPLIED PHYSICS
Jpn. J. Appl. Phys., Jan. 1989

Low temperature epitaxial growth of InSb on GaAs
T. Hariu; T. Ohshima; S. Yamauchi, ＩｎＳｂのＧａＡｓ上へのヘテロエピタキシャル成長におけるプラズマの効果を示した。, INST PHYSICS PUBL DIV
Proc. 15th Symp. GaAs & Related Compounds, Sep. 1988

Plasma-assisted epitaxial growth of compound semiconductors　　　　　　　　　　　　　　　
T. Hariu; Q. Z. Gao; S. F. Fang; S. Yamauchi; T. Kitagaki, プラズマ・アシステド・エピタキシー法がⅢ－Ⅴ族化合物半導体の低温エピタキシャル成長に有効であることを示した。
Proc. 1st China-Japan Symp. on Plasma Chemistry, Jul. 1988

Doping properties of ZnSe layers grown by plasma-assisted epitaxy　　　　　　　　　　　　　　　
S. Yamauchi; K. Matsushita; T. Hariu, プラズマ・アシステド・エピタキシー法によるＺｎＳｅヘテロエピタキシャル成長におけるドーピング特性を明らかにした。
Proc. 8th Int'l Symp. on Plasma Chemistry, Sep. 1987

Photoelectric properties of ZnSe films grown by plasma-assisted epitaxy in mixed plasma gas H2+N2　　　　　　　　　　　　　　　
S. Yamauchi; T. Hariu, 水素・窒素混合ガスプラズマを用いて
ＺｎＳｅのエピタキシャル成長を行い、窒素をプラズマ励起することにより浅いアクセプタ準位を導入できることを初めて示し、ｐ型ＺｎＳｅ形成の可能性を示した。
Appl. Surf. Sci., Aug. 1987

Low temperature epitaxial growth of highly-conductive ZnSe layers in mixed plasma of hydrogen and hydrogen chloride
S. Yamauchi; H. Hariu; K. Matsushita, 水素・窒素混合ガスプラズマを用いて

青色ＬＥＤ、ＬＤに必要な低抵抗ｎ型ＺｎＳｅ成長のためのドナー不純物として塩素が非常に有効であることを示し、従来の方法に比べ抵抗率を飛躍的に低減することに成功した。, JAPAN J APPLIED PHYSICS
Jpn. J. Appl. Phys, Jun. 1987

Nondestructive evaluation of Lactose including anomer and crystallized particles　　　　　　　　　　　　　　　
S. Yamauchi; S. Hatakeyama; Y .Imai; and M. Tonouchi
Proc. International Workshop on Optical Terahertz Science and Technology 2013, 04 Apr. 2013, [Reviewed]

TERAHERTZ-TIME DOMAIN SPECTROSCOPY FOR LACTOSE ANALYSIS ,ON THE STEREOISOMER AND THE PARTICLE SIZE　　　　　　　　　　　　　　　
S. Hatakeyama; S. Yamauchi; Y .Imai; and M. Tonouchi
Proc. 3rd International Symposium on Terahertz Nanoscience, 12 Dec. 2012, [Reviewed]

ANALYSIS OF MULTILAYERED THz WAVEGUIDE BY USING POLYMER TUBES WITH DIFFERENT INDICES　　　　　　　　　　　　　　　
Y .Imai; T. Kuroda; S. Yamauchi; H. Yokota and M. Tonouchi
Proc. 3rd International Symposium on Terahertz Nanoscience, 12 Dec. 2012, [Reviewed]

Qualitative and quantitative analysisi of lactose-anomer by THz-TDS　　　　　　　　　　　　　　　
S. Yamauchi; Y .Imai; and M. Tonouchi
Proc. International Symposium on Terahertz Nanoscience, Sep. 2011, [Reviewed]

Measurement of nonlinear refractive index by using input-output characteristics in OFRR nonlinear dynamics
Y. Imai; S. Yamauchi; H. Yokota; and S. Wei
Proc. 21th International Conference on Optical Fiber Sensors, Aug. 2011, [Reviewed]

Measurement of nonlinear refractive index by using input-output characteristics in OFRR nonlinear dynamics
Y. Imai; S. Yamauchi; H. Yokota; and S. Wei
Proc. 21th International Conference on Optical Fiber Sensors, Jun. 2011, [Reviewed]

Measurement of Water Absorption Coefficient using Terahertz Time-Domain Spectroscopy
Takehito Suzuki; Koyuru Takayama; Satoshi Yamauchi; Yoh Imai; Masayoshi Tonouchi
2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2, 22 Sep. 2009, [Reviewed]

Effect of water cluster on absorption property in terahertz time-domain spectroscopy
S. Yamauchi; Y. Aoyagi; A. Okamoto; Y. Imai; M. Tonouchi
Join 32nd int’l Conf. on Infrared and Millimeter waves and 15th int’l Conf., Sep. 2007, [Reviewed]

プラズマCVD法により形成した親水性TiO2薄膜の膜厚特性　　　　　　　　　　　　　　　
熊谷幸樹; 宮村 徹; 山内 智
第１４回電気学会東京支部茨城支所研究発表会 講演予稿集, 02 Dec. 2006

プラズマCVD法による酸化チタン薄膜の形成と親水性特性　　　　　　　　　　　　　　　
山内 智
第４４回CVD研究会 講演予稿集, 30 Nov. 2006, [Invited]

Proposal for Nonlinear Refractive Index Measurement by Using Spectral Ratio in Modulated OFRR Dynamics　　　　　　　　　　　　　　　
Y. Imai; M. Mimuro; S. Yamauchi; K. Suzuki
18th International Conference on Optical Fiber Sensors, 23 Oct. 2006, [Reviewed]

Production of zinc-oxide mixture plasma for ZnO film synthesis based on mass-selective momentum control　　　　　　　　　　　　　　　
Naoyuki Sato; Satoshi Yamauchi; Takashi Ikehata; Yasushi Nakano; Jin Oonuki
Plasma Science Symposium 2005/The 22nd Symposium on Plasma Processing, 26 Jan. 2005

Characteristics of the magnetized rf oxygen plasma for ZnO film synthesis based on mass-selective momentum control　　　　　　　　　　　　　　　
Yasushi Nakano; Naoyuki Sato; Takashi Ikehata; Satoshi Yamauchi; Jin Oonuki
Plasma Science Symposium 2005/The 22nd Symposium on Plasma Processing, 26 Jan. 2005

Purity of source materials and elimination of residual impurities in ZnSe epitaxial growth　　　　　　　　　　　　　　　
F. Ito; T. Hamada; S. Yamauchi; T. Hariu
Record of Alloy Semiconductor Phys. and Elect. Symp., Oct. 1993

Surface state characterization by a new DLTS analysis　　　　　　　　　　　　　　　
H. Ohba; T. Hamada; S. Yamauchi; T. Hariu
Record of Alloy Semiconductor Phys. and Elect. Symp., Oct. 1992

Optical emission spectro- scopy in plasma-assisted epitaxial growth of ZnSe　　　　　　　　　　　　　　　
S. Yamauchi; T. Hariu; S. Ono
Proc. Jpn. Symp. Plasma Chemistry, Jul. 1991

Composition control of InxGa1-xSb layers grown by plasma-assisted epitaxy　　　　　　　　　　　　　　　
T. Ohshima; S. Yamauchi; T.Hariu
Record of Alloy Semiconductor Phys. and Elect. Symp., Oct. 1990

Heteroepitaxial growth of compound and alloy semiconductors by plasma-assisted epitaxy　　　　　　　　　　　　　　　
T. Hariu; Q. Z. Gao; S. F. Fang; S. Yamauchi; T. Ohshima
Record of Alloy Semiconductor Phys. and Elect. Symp., Oct. 1989

Alloy semiconductors for a few micrometer-wavelength optoelectronic devices by plasma-assisted epitaxy　　　　　　　　　　　　　　　
T. Hariu; Q. Z. Gao; S. F. Fang; S. Yamauchi; T. Ohshima
Record of Alloy Semiconductor Phys. and Elect. Symp., Oct. 1988

Characterization of H2+N2 mixed gas plasma for N-doped ZnSe epitaxial growth　　　　　　　　　　　　　　　
S. Yamauchi; T. Hariu
Proc. Jpn. Symp. Plasma Chemistry, Jul. 1988

プラズマCVDにおける成膜条件の最適化に向けた反応機構の理解とプロセス制御・成膜事例　　　　　　　　　　　　　　　
Contributor
サイエンス＆テクノロジー, 27 Sep. 2018
9784864281706

ディスプレイ・光学部材における薄膜製造技術　　　　　　　　　　　　　　　
Joint work
情報機構, 30 Aug. 2007
9784901677837

Study of chemical vapor deposition of Cu using CuI on Ta
Yu Miyamoto; Satoshi Yamauchi
Advanced Metallization Conference 2024 33rd Asian Session, 03 Oct. 2024
20241002, 20241004

ヨウ化銅（I）を原料とするCVD法によるTa上へのCu堆積
宮本 裕; 山内 智
第72回 応用物理学会 春季学術講演会, 14 Mar. 2024
20240314, 20240317

Selective chemical vapor deposition of Cu using CuI on fine-structure
Gento Toyoda; Satoshi Yamauchi
Advanced Metallization Conference 2023 32nd Asian Session, 12 Oct. 2023, 応用物理学会 シリコンテクノロジー分科会
20231012, 20231013

Selective chemical vapor deposition of Cu using CuI-precursor for fine structured Metallization
Gento Toyoda; Satoshi Yamauchi
E-MRS Fall-Meeting 2023, 19 Sep. 2023, European Materials Research Society
20230918, 20230921

二段階成長による選択LPCVD-Cuの成長形態の制御
豊田絃人、山内智
第30回電気学会茨城支所研究発表会, 17 Dec. 2022, 電気学会
20221217, 20221217

金属ハライドを原料とする金属層の気相選択形成
山内 智
ハロゲン利用ミニシンポジウム, 25 Nov. 2022, 臭素化学懇話会, [Invited]
20221125, 20221125

A study of Cu-growth feature by selective-LPCVD using CuI-precursor
Gento Toyoda; Satoshi Yamauchi; Takashi Fuse; Yusuke Kubota
Advanced Metallization Conference 2022 31st Asian Session, 13 Oct. 2022, 応用物理学会 シリコンテクノロジー分科会
20221013, 20221014

ヨウ化銅(Ⅰ)を用いた選択CVD法による低抵抗率な銅層の形成
豊田絃人、山内智
第83回応用物理学会秋季学術講演会, 21 Sep. 2022, 日本応用物理学会
20220920, 20220923

ヨウ化銅(Ⅰ)を原料とする選択LPCVD法によるCuの成長機構　　　　　　　　　　　　　　　
豊田 絃人、菊池 ひかり、山内 智、布瀬 暁志、久保田 雄介
第69回 応用物理学会 春季学術講演会, 25 Mar. 2022, 日本応用物理学会
20220322, 20220326

CuIを用いたLPCVD法によるRu上への大粒径Cu成長　　　　　　　　　　　　　　　
菊池ひかり、山内智
第29回電気学会東京支部茨城支所研究発表会, 11 Dec. 2021, 電気学会
20211211, 20211211

ヨウ化銅を用いたルテニウム上への銅の選択化学気相堆積　　　　　　　　　　　　　　　
堀内健佑; 山内 智
第８０回応用物理学会秋季学術講演会, 18 Sep. 2019, 日本応用物理学会

ヨウ化銅を用いたLPCVD法による銅膜の高速成長　　　　　　　　　　　　　　　
堀内健佑; 由紀; 城塚達也; 山内智
平成 30 年度 電気学会東京支部 茨城支所 研究発表会, 17 Nov. 2018, 電気学会

αーラクトースによるTHz波発振特性　　　　　　　　　　　　　　　
高橋伸介; 山内 智
第２５回電気学会東京支部茨城支所研究発表会, 18 Nov. 2017, 電気学会

低圧化学気相堆積法を用いた高効率な光触媒性を有する酸化チタン薄膜の形成　　　　　　　　　　　　　　　
木村慎二; 山内 智
第２５回電気学会東京支部茨城支所研究発表会, 18 Nov. 2017, 電気学会

CuIを原料とするLPCVD法による選択的なCu堆積Ⅱ　　　　　　　　　　　　　　　
西川太二; 山内 智
第２５回電気学会東京支部茨城支所研究発表会, 18 Nov. 2017, 電気学会

ヨウ化銅のみを原料とする銅の気相選択成長　　　　　　　　　　　　　　　
山内 智
TSV応用研究会, 04 Oct. 2016, TSV応用研究会, [Invited]

配向性制御によるアナターゼTiO2光触媒性の高効率化　　　　　　　　　　　　　　　
山本佳祐; 山内智
第23回電気学会東京支部茨城支所研究発表会, 28 Nov. 2015, 電気学会東京支部茨城支所

THz-TDSによる超親水性表面での水の分析　　　　　　　　　　　　　　　
山内 智; 今井 洋; 斗内政吉
第74回応用物理学会秋季学術講演会, 18 Sep. 2013, 応用物理学会

Nb-FドープCVD-TiO2薄膜のwet処理による特性改善　　　　　　　　　　　　　　　
山内 智; 石橋和洋
第74回応用物理学会秋季学術講演会, 17 Sep. 2013, 応用物理学会

ＣＶＤ法による低抵抗酸化チタン薄膜の成長II　　　　　　　　　　　　　　　
石橋和洋; 永塚正浩; 塚本修平; 山内 智
第20回電気学会東京支部茨城支所研究発表会, 24 Nov. 2012

CVD法による低抵抗酸化チタン薄膜の成長II　　　　　　　　　　　　　　　
石橋和洋; 永塚正浩; 塚本修平; 山内 智
第７３回応用物学会学術講演会, 13 Sep. 2012

THz-TDSによる糖類の分析III　　　　　　　　　　　　　　　
山内 智; 畠山さくら; 今井 洋; 斗内政吉
第７３回応用物学会学術講演会, 11 Sep. 2012

CVD法による低抵抗酸化チタン薄膜の成長　　　　　　　　　　　　　　　
石橋和洋; 齋木翔太; 山内 智
第５９回応用物学関係連合講演会, 18 Mar. 2012

ＣＶＤ法による低抵抗酸化チタン薄膜の成長I　　　　　　　　　　　　　　　
齊木翔太; 石橋和洋; 山内 智
第19回電気学会東京支部茨城支所研究発表会, 19 Nov. 2011

THz-TDSによる糖類の分析II　　　　　　　　　　　　　　　
山内 智; 高橋敦史; 高山 超; 今井 洋; 斗内政吉
第７２回応用物学会学術講演会, Sep. 2011

水素プラズマセルを用いたペンタセン薄膜の形成２　　　　　　　　　　　　　　　
水口嵩敏; 小野寺美幸; 山内 智
第７２回応用物学会学術講演会, Sep. 2011

THz-TDSによる糖類の分析　　　　　　　　　　　　　　　
山内 智; 高橋篤史; 高山 超; 今井 洋; 斗内政吉
第５８回応用物学関係連合講演会, Mar. 2011

水素プラズマセルを用いたペンタセン薄膜の形成　　　　　　　　　　　　　　　
水口嵩敏; 水上洋典; 山内 智
第５８回応用物学関係連合講演会, Mar. 2011

テラヘルツ時間領域分光法による不純物添加水の分析Ⅱ　　　　　　　　　　　　　　　
高山 超; 山内 智; 今井 洋
第18回電気学会東京支部茨城支所研究発表会, Nov. 2010

ペンタセン薄膜の形成制御と評価　　　　　　　　　　　　　　　
水上洋典; 水口嵩敏; 山内 智
第18回電気学会東京支部茨城支所研究発表会, Nov. 2010

プラズマＣＶＤ法を用いた超親水性酸化チタン薄膜の室温形成　　　　　　　　　　　　　　　
圷 里紗; 仲川明恵; 山内 智
第18回電気学会東京支部茨城支所研究発表会, Nov. 2010

プラズマＣＶＤ法による親水性酸化チタン薄膜の室温形成Ⅱ　　　　　　　　　　　　　　　
山内 智; 圷 理紗; 今井 洋
第71 回応用物理学会学術講演会, Sep. 2010

テラヘルツ波時間領域分光法による不純物添加水の分析II　　　　　　　　　　　　　　　
高山 超; 山内 智; 今井 洋; 斗内政吉
第５７回応用物学関係連合講演会, Mar. 2010

テラヘルツ時間領域分光法による不純物添加水の分析　　　　　　　　　　　　　　　
高山 超; 山内 智; 今井 洋
第17回電気学会東京支部茨城支所研究発表会, Nov. 2009

ＰＣＶＤ法により室温形成した酸化チタン薄膜の紫外線処理効果　　　　　　　　　　　　　　　
鈴木裕美; 樋口智幸; 山内 智
第７０回応用物理学会学術講演会, 11 Sep. 2009

テラヘルツ波時間領域分光法による不純物添加水の分析　　　　　　　　　　　　　　　
高山 超; 鈴木健仁; 山内 智; 今井 洋
第７０回応用物理学会学術講演会, 09 Sep. 2009

プラズマＣＶＤ法による酸化チタン薄膜の室温成長　　　　　　　　　　　　　　　
樋口智幸; 山内 智
第５６回応用物理学関係連合講演会, 30 Mar. 2009

ＴＨｚ波を用いた水の透過型分光分析Ⅱ　　　　　　　　　　　　　　　
野口 航; 高山 超; 山内 智; 今井 洋
第５６回応用物理学関係連合講演会, 30 Mar. 2009

テラヘルツ波時間領域分光法による水の構造分析Ⅱ　　　　　　　　　　　　　　　
野口 航; 高山 超; 山内 智; 今井 洋
第１６回電気学会東京支部茨城支所研究発表会, Dec. 2008

酸化チタンバッファー層を用いたＰＡＥ－ＺｎＯ薄膜の高品質化　　　　　　　　　　　　　　　
関 資明; 水上洋典; 山内 智
第１６回電気学会東京支部茨城支所研究発表会, Dec. 2008

樋口智幸，山内 智　　　　　　　　　　　　　　　
プラズマCVD法による酸化チタン薄膜の低温成長
第１６回電気学会東京支部茨城支所研究発表会, Dec. 2008

親水性ナノ結晶を用いた大気中水分の吸着現象の制御　　　　　　　　　　　　　　　
上野陽平; 山内 智
第１６回電気学会東京支部茨城支所研究発表会, Dec. 2008

Plasma synthesis of zinc-oxide thin film based on mass-selective momentum control　　　　　　　　　　　　　　　
Naoyuki Sato; Satoshi Yamauchi; Takashi Ikehata; Yasushi Nakano; Jin Oonuki
Plasma Science Symposium 2005/The 22nd Symposium on Plasma Processing, 26 Jan. 2005

Jan. 2010, 材料技術研究協会

The Institute of Electrical and Electronics Engineers,(IEEE)

The Japan Society of Applied Physics

The Institute of Electrical and Electronics Engineers (IEEE)

Materials Research Society (MRS)

選択金属成膜法を用いた自己整合配線形成技術
可能性検証
Oct. 2023 - Mar. 2025

Selective Chemical-Vapor Deposition of Metal Films using Cu-Iodide
Grant-in-Aid for Scientific Research (C)
Ibaraki University
Apr. 2022 - Mar. 2025

自己解離型化学気相法による金属層の選択形成
Feb. 2020 - Mar. 2023

Selective Cu-deposition using CuI as precursor　　　　　　　　　　　　　　　
基盤研究(C)
Apr. 2017 - Mar. 2020

Development of THz-emitter using Sugar Crystal
Grant-in-Aid for Challenging Exploratory Research
Ibaraki University
01 Apr. 2012 - 31 Mar. 2015

Development of plasma synthesis technology for advanced complex compound materials based on mass-selective momentum control
Grant-in-Aid for Scientific Research (B)
Ibaraki University
2004 - 2006

Study of CCD Register for High-Sensitivity and Low-Dark Current Imaging Devices
Grant-in-Aid for Scientific Research (C)
IBARAKI UNIVERSITY
2001 - 2002