Satoshi YAMAUCHIProfessor
■Researcher basic information
Organization
- College of Engineering Department of Materials Science and Engineering
- Graduate School of Science and Engineering（Master's Program） Major in Quantum Bean Science
- Graduate School of Science and Engineerin（Doctoral Program） Major in Quantum Bean Science
- Faculty of Applied Science and Engineering Domain of Materials Science and Engineering
Research Areas
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment, Electron Devices and Apparatus Engineering
- Natural sciences, Semiconductors, optical and atomic physics, "Solid‐State Physics I (Optical Properties, Semiconductor and Dielectrics)"
- Nanotechnology/Materials, Functional solid-state chemistry, "Function, Properties and Materials in Chemistry"
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering, Electronic and Electric Materials Engineering
Research Keyword
Educational Background
■Research activity information
Award
Paper
- Selective Cu growth on fine structures using a Cu-iodide precursor
Gento Toyoda; Takashi Fuse; Satoshi Yamauchi, Corresponding, Abstract
Selective Cu deposition by CVD using copper(I)-iodide (CuI) as the precursor is applied on 0.5 μm- and 1.0 μm-pitch Cu-lines/SiO2 -spaces (L/S) at 370 °C. A confocal laser microscope suggests that the Cu is selectively deposited on the Cu line, not on the space. The average Cu height provided by the cross-sectional profile across the 1.0 μm-pitch L/S, which is linearly increased with total CuI supply, evaluates that the dissociation efficiency of CuI is about 23%. Surface scanning electron microscopy and energy dispersive X-ray spectroscopy clearly show the selective deposition of Cu, but surface roughness on the deposited Cu is increases with the Cu-height. The feature of surface roughness is discussed on the coalescent Cu line at the deposition temperature and the rate-limiting step in the CVD. The selective Cu deposition is also performed on 0.5 μm-pitch L/S, in which the deposition rate is similar but the surface is rougher than on the 1.0 μm-wide line., IOP Publishing
Japanese Journal of Applied Physics, 03 Jun. 2024, [Reviewed] - 〔Major achievements〕Study of Cu-growth feature by selective low-pressure chemical vapor deposition using a CuI precursor
Gento Toyoda; Hikari Kikuchi; Satoshi Yamauchi; Tatsuya Joutsuka; Takashi Fuse; Yusuke Kubota, Corresponding, 日本応用物理学会
Japanese Journal of Applied Physics, 19 Apr. 2023, [Reviewed] - Synthesis, characterization, and formation of self-assembled monolayers of a phosphonic acid bearing a vinylene-bridged fluoroalkyl chain
Tomohiro Shirai; Satoshi Yamauchi; Hikari Kikuchi; Hiroki Fukumoto; Hiroto Tsukada; Tomohiro Agou, Elsevier
Applied Surface Science, 01 Mar. 2022, [Reviewed] - Facet Dependence of Photocatalytic Activity in Anatase TiO2: Combined Experimental and DFT Study
T. Joutsuka; H. Yoshinari; S. Yamauchi, Last, The Chemical Society of Japan
Bulletin of the Chemical Society of Japan, Jan. 2021, [Reviewed] - Low-pressure chemical vapor deposition of Cu on Ru using CuI as precursor
Taiji Nishikawa; Kensuke Horiuchi; Tatsuya Joutsuka; Satoshi Yamauchi, Last, Elsevier
Journal of Crystal Growth, 27 Aug. 2020, [Reviewed] - Low-pressure chemical vapor deposition of Cu on Ru substrate using CuI: Ab initio calculations
Tatsuya Joutsuka; Satoshi Yamauchi, Last, Elsevier
Chemical Physics Letters, 20 Jan. 2020, [Reviewed] - Selective Cu-deposition by LPCVD using CuI
T. Nishikawa; S. Yamauchi
Extended Abstract of ADMETA plus 2016 Asian Session, 20 Oct. 2016, [Reviewed], [Invited] - Enhanced Photo-Induced Property of LPCVD-TiO2 Layer on PCVD-TiOx Initial Layer
Satoshi Yamauchi; Keisuke Yamamoto; Sakura Hatakeyama
Journal of Materials Science and Chemical Engineering, 18 Jun. 2015, [Reviewed] - Drastic Resistivity Reduction of CVD-TiO2 Layers by Post-Wet-Treatment in HCl Solution
Satoshi Yamauchi; Kazuhiro Ishibashi; Sakura Hatakeyama
Journal of Crystallization Process and Technology, 16 Jan. 2015, [Reviewed] - Low Resistive TiO Deposition by LPCVD Using TTIP and NbF5 in Hydrogen-Ambient
Satoshi Yamauchi; Kazuhiro Ishibashi; Sakura Hatakeyama
Journal of Crystallization Process and Technology, 12 Jan. 2015, [Reviewed] - Low Pressure Chemical Vapor Deposition of TiO2 Layer in Hydrogen-Ambient
Satoshi Yamauchi; Kazuhiro Ishibashi; Sakura Hatakeyama
Journal of Crystallization Process and Technology, 07 Oct. 2014, [Reviewed] - Low Pressure Chemical Vapor Deposition of Nb and F Co-Doped TiO2 Layer
Satoshi Yamauchi; Shouta Saiki; Kazuhiro Ishibashi; Akie Nakagawa; Sakura Hatakeyama
Journal of Crystallization Process and Technology, 03 Apr. 2014, [Reviewed] - Nondestructive evaluation of crystallized-particle size in lactose-powder by terahertz time-domain spectroscopy
Satoshi Yamauchi; Sakura Hatakeyama; Yoh Imai; Masayoshi Tonouchi
OPTICAL ENGINEERING, Mar. 2014, [Reviewed] - Plasma-assisted Chemical Vapor Deposition of Titanium Oxide layer at Room-Temperature
S. Yamauchi; H. Suzuki; R. Akutsu
Journal of Crystallization Process and Technology, 08 Jan. 2014, [Reviewed] - Remote-plasma-assisted deposition of pentacene layer using atomic-hydrogen
S. Yamauchi; T. Minakuchi; M. Onodera
Journal of Crystallization Process and Technology, 02 Jan. 2014, [Reviewed] - Terahertz time-domain spectroscopy to identify and evaluate anomer in lactose
S. Yamauchi; S. Hatakeyama; Y. Imai; M. Tonouchi
American Journal of Analytical Chemistry, 16 Dec. 2013, [Reviewed] - ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior
Satoshi Yamauchi; Yoh Imai
Crystal Structure Theory and Applications, 25 Sep. 2013, [Reviewed] - Evaluation of interfacial water on super-hydrophilic surface by THz-TDS
S. Yamauchi; Y. Imai; M. Tonouchi
The 38th Inte'l Conf. on Infrared, Millimeter, and Terahertz waves, proceeding, 02 Sep. 2013, [Reviewed] - Measurements of Nonlinear Refractive Index ,of Optical Fiber by Using Multiple Interference in OFRR
Yoh Imai; Hirohisa Yokota; Satoshi Yamauchi
Photonics and Optoelectronics, Jul. 2013, [Reviewed] - ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Crystallographic Behavior
Satoshi Yamauchi; Yoh Imai
Crystal Structure Theory and Applications, Jun. 2013 - Plasma-Assisted Chemical Vapor Deposition of TiO2 Thin,Films for Highly Hydrophilic Performance
Satoshi Yamauchi; Yoh Imai
Crystal Structure Theory and Applications, Mar. 2013, [Reviewed] - Terahertz Waveguide Using Triangle Bundle Structure of Polymer Tubes
Yoh Imai; Satoshi Yamauchi; Hirohisa Yokota; Masayoshi Tonouchi
2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2013, [Reviewed] - Determination of stereoisomer in sugars by THz-TDS
Satoshi Yamauchi; Yoh Imai; Hirohisa Yokota; Masayoshi Tonouchi
The 22nd General Congress of the International Commission for Optics (ICO-22), Proc. of SPIE, Aug. 2011, [Reviewed] - Estimation of Fiber Parameters by Using OFRR Nonlinear Dynamics
Yoh Imai; Satoshi Yamauchi; Hirohisa Yokota
22ND CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: LIGHT FOR THE DEVELOPMENT OF THE WORLD, 2011, [Reviewed] - Dielectric behavior in THz of Water influenced by alkaline- and alkali-earth-halides
S. Yamauchi; K. Takayama; Y. Imai; K. Takeya; M. Tonouchi
The 35th Inte'l Conf. on Infrared, Millimeter, and Terahertz waves, proceeding, 05 Sep. 2010, [Reviewed] - THz-TDS study for water analysis on aqueous solution of alkali and alkaline-earth halides
T. Suzuki; K. Takayama; S. Yamauchi; Y. Imai; M. Tonouchi
2nd International Workshop on Terahertz Technology,Extended Abstracts, 30 Nov. 2009, [Reviewed] - Coherence effect on decryption characteristics in message modulation type chaos secure communication systems using fiber-optic ring resonators
Yoh Imai; Satoshi Yamauchi; Hirohisa Yokota; Takehito Suzuki; Kansuke Tsuji
OPTICS COMMUNICATIONS, 28 Jul. 2009, [Reviewed] - Proposal for nonlinear refractive index measurement by using spectral ratio in modulated OFRR dynamics
M. Mumuro; Y. Imai; S. Yamauchi; K. Suzuki
Optics Communications, Feb. 2008, [Reviewed] - Plasma-assisted epitaxial growth of nitrogen-doped and high-quality ZnO thin films
S. Yamauchi
SPIE Photonics West 2008, Proceedings of SPIE, Jan. 2008, [Reviewed], [Invited] - Surface treatment of Si using hydrogen-plasma to improve optoelectronic property of ZnO on (111)Si
Satoshi Yamauchi; Hirokatsu Kawasaki; Takashi Hariu
Jpn.J.Appl.Phys., 09 Nov. 2005, [Reviewed] - A novel buffer layer using titanium-oxide for ZnO epitaxial growth on sapphire
Toru Miyamura; Satoshi Yamauchi
Ext.Abstract of the 2005 int'l Conf. on Solid State Devices and Materials, 13 Sep. 2005 - Photoluminescence studies of undoped and nitrogen-doped ZnO layers grown by plasma-assisted epitaxy
S. Yamauchi; Y. Goto; T. Hariu
J. Crystal Growth, Jan. 2004 - Plasma-assisted epitaxial growth of ZnO layer on sapphire by plasma-assisted epitaxy
S. Yamauchi; T. Hariu
MRS Symp. Proc., Feb. 2001 - Plasma-assisted epitaxial growth of ZnO layer on sapphire
S. Yamauchi; T. Ashiga; A. Nagayama; T. Hariu
J. Crystal Growth, Jun. 2000 - Suppresion of gate leakage current in n-AlGaAs/GaAs power HEMTs
A. Nagayama; S. Yamauchi; T. Hariu
IEEE Trans. on Electron Devices, Mar. 2000 - Plasma-assisted epitaxial growth of ZnO layer on sapphire
S. Yamauchi; T. Ashiga; A. Nagayama; T. Hariu, サファイア上へのＺｎＯ薄膜の成長において成長初期段階での核発生確率が小さいことに着目し、成長初期段階での制御を行うことによりＺｎＯ薄膜の結晶性の改善が可能であることを示した。
9th Int'l Conf. on II-VI Compounds, Nov. 1999 - Low temperature epitaxial growth of ZnO layer by plasma-assisted epitaxy
S. Yamauchi; H. Handa; A. Nagayama; T. Hairu, 酸素プラズマを用いてＺｎＯ薄膜を低温でエピタキシャル成長させることにより、膜中の酸素欠損を著しく減少させることが可能になり、良好な発光特性が得られることを示した。
Thin Solid Films, Jun. 1999 - Total low temperature plasma process for epitaxial growth of compound semiconductors on Si: InSb/Si
S. Yamauchi; T. Hariu; H. Ohba; K. Sawamura, Ｓｉ上へのＩｎＳｂ薄膜のヘテロエピタキシャル成長を実現するためのＳｉ表面の清浄化及び不活性化プロセスを構築し、且つ、大きな格子不整合を緩和できる初期成長層を提案し、それらを用いることによりＩｎＳｂのヘテロエピタキシャル成長を可能にした。
Thin Solid Films, May 1998 - Low-temperature deposition of (Ba,Sr)TiO3 thin films for ULSI DRAM applications by the initial rf-sputtering step control
S. Takehiro; S. Yamauchi; M. Yoshimaru
Proc. 6th Int'l Symp. on ULSI Science and Technology, May 1997 - The simplest stacked BST capacitor for the future DRAMs using a novel low temperature growth enhanced crystallization
S. Takehiro; S. Yamauchi; M. Yoshimaru; H. Onoda
Symp. VLSI Technology Digest, May 1997 - High reliable lead-zirconate- titanate growth using reactive sputtering and rapid thermal annealing
S. Yamauchi; M. Yoshimaru
Integrated Ferroelectrics, Feb. 1997 - High reliable PZT growth using conventional reactive sputtering and rapid thermal annealing
S. Yamauchi; M. Yoshimaru, 反応性スパッタ法によるＰＺＴの低温成長と急速熱処理により形成した強誘電体ＰＺＴ薄膜が優れた膜特性を有することを示した。
Abstract 8th ISIF, Mar. 1996 - Growth of [111]-oriented lead zirconate titanate thin film with smooth surface to improve electrical properties
S. Yamauchi; M. Yoshimaru
Jpn. J. Appl. Phys., Feb. 1996 - Quasi-epitaxial growth of PZT thin film tofabricate capacitor suitable for 256Mb DRAM and beyond
S. Yamauchi; M. Yoshimaru, 表面処理されたＰｔ上に反応性スパッタ法により低温で膜組成と分布を精確に制御したＰＺＴ層を形成し急速熱処理により再結晶化させることによりＰｔの原子配列に沿った原子配列のＰＺＴ層を形成でき、２５６Ｍｂ以上の集積度のＤＲＡＭに適用可能であることを示した。
Ext. Abstract SSDM, Aug. 1995 - Plasma-cracked supply of group V and group VI elements for low temperature epitaxy
T. Hariu; S. Yamauchi; S. F. Fang; T. Ohshima; T. Hamada
J. Cryst. Growth, Mar. 1994 - Crystallographic and electrical studies of sputtered lead-zirconate-titanate (PZT) thin films treated by rapid thermal annealing
S. Yamauchi; M. Yoshimaru; M. Ino, 反応性スパッタ法によるパイロクロア相ＰＺＴの低温成長及び急速熱処理によるペロブスカイト相への再結晶化が強誘電体ＰＺＴ薄膜の形成に非常に有効であることを示した。
Proc. Int'l Conf. AMDP, Feb. 1994 - Electrical and crystallographic properties of sputtered- Pb(Zr,Ti)O3 films treated by rapid thermal annealing
S. Yamauchi; H. Tamura; M. Yoshimaru; M. Ino
Jpn. J. Appl. Phys., Sep. 1993 - Plasma-process for substrate surface-cleaning and successive epitaxial growth of semiconductors
T. Hariu; S. Yamauchi; T. Ohshima; H. Takei; T. Hamada, プラズマ・アシステド・エピタキシー法がＳｉ表面の清浄化及びＳｉ上への化合物半導体の低温エピタキシャル成長に有効であることを示した。
Proc. APCPST. CJSPC and CCPST, Feb. 1992 - Effect of enhanced reactivity in plasma-assisted epitaxial growth of ZnSe
S. Yamauchi; T. Hariu; S. Ono, ＺｎＳｅの成長の際に用いる水素及び水素・窒素混合ガスプラズマ中で生成される励起種をプラズマ発光分光分析により検出し、プラズマ励起窒素が浅いアクセプタとして導入されることを示した。
J. Cryst. Growth, Aug. 1991 - Interface characterization of ZnSe/GaAs heterojunctions
T. Hariu; S. Yamauchi; H. Tanaka; S. Ono
Appl. Surf. Sci., Jul. 1991 - Plasma-assisted epitaxial growth of ZnSe films in hydrogen plasma
S. Yamauchi; T. Hariu
MRS Symp. Proc., Dec. 1990 - PLASMA-ASSISTED SURFACE-TREATMENT OF GAAS FOR IMPROVED ZNSE/GAAS HETEROSTRUCTURES
S YAMAUCHI; T KITAGAKI; T HARIU
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, [Reviewed] - IMPORTANCE OF V III SUPPLY RATIO IN LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB BY PLASMA-ASSISTED EPITAXY
T OHSHIMA; S YAMAUCHI; T HARIU
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, [Reviewed] - Optical emission spectroscopy in plasma-assisted epitaxial growth of compound semiconductors
T. Hariu; S. F. Fang; S. Yamauchi; T. Ohshima, プラズマ・アシステド・エピタキシー法により化合物半導体を低温エピタキシャル成長させる際にプラズマ中で生成される励起種を検出し、有効な励起種を示した。
Proc. 9th Int'l Symp. on Plasma Chemistry, Sep. 1989 - Plasma-assisted surface treat- ment of GaAs for improved ZnSe/GaAs heterostructures
S. Yamauchi; T. Kitagaki; T. Hariu
Proc. 16th Symp. on GaAs & Related Compounds, Sep. 1989 - Importance of V/III supply ratio in low temperature epitaxial growth of InSb by plasma -assisted epitaxy
T. Ohshima; S. Yamauchi; T. Hariu
Proc. 16th Symp. on GaAs & Related Compounds, Sep. 1989 - ZnSe/GaAs heterointerface characterization by a new DLTS analysis
T. Hariu; S. Yamauchi; T. Kitagaki; Y. Numagami, ＧａＡｓの表面準位を測定する新しいＤＬＴＳ法の提案とその方法により評価したＺｎＳｅ／ＧａＡｓ界面の特性を示した。
Defect Control in Semiconductor, Sep. 1989, [Reviewed] - Plasma-assisted atomic layer epitaxial growth of ZnSe
T. Kitagaki; S. Yamauchi; T. Hariu, プラズマプロセスによりＺｎＳｅの低温原子層エピタキシャル成長が可能であることを示した。
Proc. JSAP-MRS Int'l Conf. on Electronic Materials, Aug. 1989 - LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB ON GAAS
T HARIU; T OHSHIMA; S YAMAUCHI
INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, [Reviewed] - The effect of hydrogen plasma on the low temperature epitaxial growth of InSb
T. Ohshima; S. Yamauchi; T. Hariu
Jpn. J. Appl. Phys., Jan. 1989 - Low temperature epitaxial growth of InSb on GaAs
T. Hariu; T. Ohshima; S. Yamauchi
Proc. 15th Symp. GaAs & Related Compounds, Sep. 1988 - Plasma-assisted epitaxial growth of compound semiconductors
T. Hariu; Q. Z. Gao; S. F. Fang; S. Yamauchi; T. Kitagaki, プラズマ・アシステド・エピタキシー法がⅢ－Ⅴ族化合物半導体の低温エピタキシャル成長に有効であることを示した。
Proc. 1st China-Japan Symp. on Plasma Chemistry, Jul. 1988 - Doping properties of ZnSe layers grown by plasma-assisted epitaxy
S. Yamauchi; K. Matsushita; T. Hariu, プラズマ・アシステド・エピタキシー法によるＺｎＳｅヘテロエピタキシャル成長におけるドーピング特性を明らかにした。
Proc. 8th Int'l Symp. on Plasma Chemistry, Sep. 1987 - Photoelectric properties of ZnSe films grown by plasma-assisted epitaxy in mixed plasma gas H2+N2
S. Yamauchi; T. Hariu, 水素・窒素混合ガスプラズマを用いて
ＺｎＳｅのエピタキシャル成長を行い、窒素をプラズマ励起することにより浅いアクセプタ準位を導入できることを初めて示し、ｐ型ＺｎＳｅ形成の可能性を示した。
Appl. Surf. Sci., Aug. 1987 - Low temperature epitaxial growth of highly-conductive ZnSe layers in mixed plasma of hydrogen and hydrogen chloride
S. Yamauchi; H. Hariu; K. Matsushita
Jpn. J. Appl. Phys, Jun. 1987
MISC
- Nondestructive evaluation of Lactose including anomer and crystallized particles
S. Yamauchi; S. Hatakeyama; Y .Imai; and M. Tonouchi
Proc. International Workshop on Optical Terahertz Science and Technology 2013, 04 Apr. 2013, [Reviewed] - TERAHERTZ-TIME DOMAIN SPECTROSCOPY FOR LACTOSE ANALYSIS ,ON THE STEREOISOMER AND THE PARTICLE SIZE
S. Hatakeyama; S. Yamauchi; Y .Imai; and M. Tonouchi
Proc. 3rd International Symposium on Terahertz Nanoscience, 12 Dec. 2012, [Reviewed] - ANALYSIS OF MULTILAYERED THz WAVEGUIDE BY USING POLYMER TUBES WITH DIFFERENT INDICES
Y .Imai; T. Kuroda; S. Yamauchi; H. Yokota and M. Tonouchi
Proc. 3rd International Symposium on Terahertz Nanoscience, 12 Dec. 2012, [Reviewed] - Qualitative and quantitative analysisi of lactose-anomer by THz-TDS
S. Yamauchi; Y .Imai; and M. Tonouchi
Proc. International Symposium on Terahertz Nanoscience, Sep. 2011, [Reviewed] - Measurement of nonlinear refractive index by using input-output characteristics in OFRR nonlinear dynamics
Y. Imai; S. Yamauchi; H. Yokota; and S. Wei
Proc. 21th International Conference on Optical Fiber Sensors, Aug. 2011, [Reviewed] - Measurement of nonlinear refractive index by using input-output characteristics in OFRR nonlinear dynamics
Y. Imai; S. Yamauchi; H. Yokota; and S. Wei
Proc. 21th International Conference on Optical Fiber Sensors, Jun. 2011, [Reviewed] - Measurement of Water Absorption Coefficient using Terahertz Time-Domain Spectroscopy
Takehito Suzuki; Koyuru Takayama; Satoshi Yamauchi; Yoh Imai; Masayoshi Tonouchi
2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2, 22 Sep. 2009, [Reviewed] - Effect of water cluster on absorption property in terahertz time-domain spectroscopy
S. Yamauchi; Y. Aoyagi; A. Okamoto; Y. Imai; M. Tonouchi
Join 32nd int’l Conf. on Infrared and Millimeter waves and 15th int’l Conf., Sep. 2007, [Reviewed] - プラズマCVD法により形成した親水性TiO2薄膜の膜厚特性
熊谷幸樹; 宮村 徹; 山内 智
第１４回電気学会東京支部茨城支所研究発表会 講演予稿集, 02 Dec. 2006 - プラズマCVD法による酸化チタン薄膜の形成と親水性特性
山内 智
第４４回CVD研究会 講演予稿集, 30 Nov. 2006, [Invited] - Proposal for Nonlinear Refractive Index Measurement by Using Spectral Ratio in Modulated OFRR Dynamics
Y. Imai; M. Mimuro; S. Yamauchi; K. Suzuki
18th International Conference on Optical Fiber Sensors, 23 Oct. 2006, [Reviewed] - Production of zinc-oxide mixture plasma for ZnO film synthesis based on mass-selective momentum control
Naoyuki Sato; Satoshi Yamauchi; Takashi Ikehata; Yasushi Nakano; Jin Oonuki
Plasma Science Symposium 2005/The 22nd Symposium on Plasma Processing, 26 Jan. 2005 - Characteristics of the magnetized rf oxygen plasma for ZnO film synthesis based on mass-selective momentum control
Yasushi Nakano; Naoyuki Sato; Takashi Ikehata; Satoshi Yamauchi; Jin Oonuki
Plasma Science Symposium 2005/The 22nd Symposium on Plasma Processing, 26 Jan. 2005 - Purity of source materials and elimination of residual impurities in ZnSe epitaxial growth
F. Ito; T. Hamada; S. Yamauchi; T. Hariu
Record of Alloy Semiconductor Phys. and Elect. Symp., Oct. 1993 - Surface state characterization by a new DLTS analysis
H. Ohba; T. Hamada; S. Yamauchi; T. Hariu
Record of Alloy Semiconductor Phys. and Elect. Symp., Oct. 1992 - Optical emission spectro- scopy in plasma-assisted epitaxial growth of ZnSe
S. Yamauchi; T. Hariu; S. Ono
Proc. Jpn. Symp. Plasma Chemistry, Jul. 1991 - Composition control of InxGa1-xSb layers grown by plasma-assisted epitaxy
T. Ohshima; S. Yamauchi; T.Hariu
Record of Alloy Semiconductor Phys. and Elect. Symp., Oct. 1990 - Heteroepitaxial growth of compound and alloy semiconductors by plasma-assisted epitaxy
T. Hariu; Q. Z. Gao; S. F. Fang; S. Yamauchi; T. Ohshima
Record of Alloy Semiconductor Phys. and Elect. Symp., Oct. 1989 - Alloy semiconductors for a few micrometer-wavelength optoelectronic devices by plasma-assisted epitaxy
T. Hariu; Q. Z. Gao; S. F. Fang; S. Yamauchi; T. Ohshima
Record of Alloy Semiconductor Phys. and Elect. Symp., Oct. 1988 - Characterization of H2+N2 mixed gas plasma for N-doped ZnSe epitaxial growth
S. Yamauchi; T. Hariu
Proc. Jpn. Symp. Plasma Chemistry, Jul. 1988
Books and other publications
Lectures, oral presentations, etc.
- Study of chemical vapor deposition of Cu using CuI on Ta
Yu Miyamoto; Satoshi Yamauchi
Advanced Metallization Conference 2024 33rd Asian Session, 03 Oct. 2024
20241002, 20241004 - Selective chemical vapor deposition of Cu using CuI on fine-structure
Gento Toyoda; Satoshi Yamauchi
Advanced Metallization Conference 2023 32nd Asian Session, 12 Oct. 2023, 応用物理学会 シリコンテクノロジー分科会
20231012, 20231013 - Selective chemical vapor deposition of Cu using CuI-precursor for fine structured Metallization
Gento Toyoda; Satoshi Yamauchi
E-MRS Fall-Meeting 2023, 19 Sep. 2023, European Materials Research Society
20230918, 20230921 - A study of Cu-growth feature by selective-LPCVD using CuI-precursor
Gento Toyoda; Satoshi Yamauchi; Takashi Fuse; Yusuke Kubota
Advanced Metallization Conference 2022 31st Asian Session, 13 Oct. 2022, 応用物理学会 シリコンテクノロジー分科会
20221013, 20221014 - ヨウ化銅(Ⅰ)を原料とする選択LPCVD法によるCuの成長機構
豊田 絃人、菊池 ひかり、山内 智、布瀬 暁志、久保田 雄介
第69回 応用物理学会 春季学術講演会, 25 Mar. 2022, 日本応用物理学会
20220322, 20220326 - CuIを用いたLPCVD法によるRu上への大粒径Cu成長
菊池ひかり、山内智
第29回電気学会東京支部茨城支所研究発表会, 11 Dec. 2021, 電気学会
20211211, 20211211 - ヨウ化銅を用いたルテニウム上への銅の選択化学気相堆積
堀内健佑; 山内 智
第８０回応用物理学会秋季学術講演会, 18 Sep. 2019, 日本応用物理学会 - ヨウ化銅を用いたLPCVD法による銅膜の高速成長
堀内健佑; 由紀; 城塚達也; 山内智
平成 30 年度 電気学会東京支部 茨城支所 研究発表会, 17 Nov. 2018, 電気学会 - αーラクトースによるTHz波発振特性
高橋伸介; 山内 智
第２５回電気学会東京支部茨城支所研究発表会, 18 Nov. 2017, 電気学会 - 低圧化学気相堆積法を用いた高効率な光触媒性を有する酸化チタン薄膜の形成
木村慎二; 山内 智
第２５回電気学会東京支部茨城支所研究発表会, 18 Nov. 2017, 電気学会 - CuIを原料とするLPCVD法による選択的なCu堆積Ⅱ
西川太二; 山内 智
第２５回電気学会東京支部茨城支所研究発表会, 18 Nov. 2017, 電気学会 - ヨウ化銅のみを原料とする銅の気相選択成長
山内 智
TSV応用研究会, 04 Oct. 2016, TSV応用研究会, [Invited] - 配向性制御によるアナターゼTiO2光触媒性の高効率化
山本佳祐; 山内智
第23回電気学会東京支部茨城支所研究発表会, 28 Nov. 2015, 電気学会東京支部茨城支所 - THz-TDSによる超親水性表面での水の分析
山内 智; 今井 洋; 斗内政吉
第74回応用物理学会秋季学術講演会, 18 Sep. 2013, 応用物理学会 - Nb-FドープCVD-TiO2薄膜のwet処理による特性改善
山内 智; 石橋和洋
第74回応用物理学会秋季学術講演会, 17 Sep. 2013, 応用物理学会 - ＣＶＤ法による低抵抗酸化チタン薄膜の成長II
石橋和洋; 永塚正浩; 塚本修平; 山内 智
第20回電気学会東京支部茨城支所研究発表会, 24 Nov. 2012 - CVD法による低抵抗酸化チタン薄膜の成長II
石橋和洋; 永塚正浩; 塚本修平; 山内 智
第７３回応用物学会学術講演会, 13 Sep. 2012 - THz-TDSによる糖類の分析III
山内 智; 畠山さくら; 今井 洋; 斗内政吉
第７３回応用物学会学術講演会, 11 Sep. 2012 - CVD法による低抵抗酸化チタン薄膜の成長
石橋和洋; 齋木翔太; 山内 智
第５９回応用物学関係連合講演会, 18 Mar. 2012 - ＣＶＤ法による低抵抗酸化チタン薄膜の成長I
齊木翔太; 石橋和洋; 山内 智
第19回電気学会東京支部茨城支所研究発表会, 19 Nov. 2011 - THz-TDSによる糖類の分析II
山内 智; 高橋敦史; 高山 超; 今井 洋; 斗内政吉
第７２回応用物学会学術講演会, Sep. 2011 - 水素プラズマセルを用いたペンタセン薄膜の形成２
水口嵩敏; 小野寺美幸; 山内 智
第７２回応用物学会学術講演会, Sep. 2011 - THz-TDSによる糖類の分析
山内 智; 高橋篤史; 高山 超; 今井 洋; 斗内政吉
第５８回応用物学関係連合講演会, Mar. 2011 - 水素プラズマセルを用いたペンタセン薄膜の形成
水口嵩敏; 水上洋典; 山内 智
第５８回応用物学関係連合講演会, Mar. 2011 - テラヘルツ時間領域分光法による不純物添加水の分析Ⅱ
高山 超; 山内 智; 今井 洋
第18回電気学会東京支部茨城支所研究発表会, Nov. 2010 - ペンタセン薄膜の形成制御と評価
水上洋典; 水口嵩敏; 山内 智
第18回電気学会東京支部茨城支所研究発表会, Nov. 2010 - プラズマＣＶＤ法を用いた超親水性酸化チタン薄膜の室温形成
圷 里紗; 仲川明恵; 山内 智
第18回電気学会東京支部茨城支所研究発表会, Nov. 2010 - プラズマＣＶＤ法による親水性酸化チタン薄膜の室温形成Ⅱ
山内 智; 圷 理紗; 今井 洋
第71 回応用物理学会学術講演会, Sep. 2010 - テラヘルツ波時間領域分光法による不純物添加水の分析II
高山 超; 山内 智; 今井 洋; 斗内政吉
第５７回応用物学関係連合講演会, Mar. 2010 - テラヘルツ時間領域分光法による不純物添加水の分析
高山 超; 山内 智; 今井 洋
第17回電気学会東京支部茨城支所研究発表会, Nov. 2009 - ＰＣＶＤ法により室温形成した酸化チタン薄膜の紫外線処理効果
鈴木裕美; 樋口智幸; 山内 智
第７０回応用物理学会学術講演会, 11 Sep. 2009 - テラヘルツ波時間領域分光法による不純物添加水の分析
高山 超; 鈴木健仁; 山内 智; 今井 洋
第７０回応用物理学会学術講演会, 09 Sep. 2009 - プラズマＣＶＤ法による酸化チタン薄膜の室温成長
樋口智幸; 山内 智
第５６回応用物理学関係連合講演会, 30 Mar. 2009 - ＴＨｚ波を用いた水の透過型分光分析Ⅱ
野口 航; 高山 超; 山内 智; 今井 洋
第５６回応用物理学関係連合講演会, 30 Mar. 2009 - テラヘルツ波時間領域分光法による水の構造分析Ⅱ
野口 航; 高山 超; 山内 智; 今井 洋
第１６回電気学会東京支部茨城支所研究発表会, Dec. 2008 - 酸化チタンバッファー層を用いたＰＡＥ－ＺｎＯ薄膜の高品質化
関 資明; 水上洋典; 山内 智
第１６回電気学会東京支部茨城支所研究発表会, Dec. 2008 - 樋口智幸，山内 智
プラズマCVD法による酸化チタン薄膜の低温成長
第１６回電気学会東京支部茨城支所研究発表会, Dec. 2008 - 親水性ナノ結晶を用いた大気中水分の吸着現象の制御
上野陽平; 山内 智
第１６回電気学会東京支部茨城支所研究発表会, Dec. 2008 - Plasma synthesis of zinc-oxide thin film based on mass-selective momentum control
Naoyuki Sato; Satoshi Yamauchi; Takashi Ikehata; Yasushi Nakano; Jin Oonuki
Plasma Science Symposium 2005/The 22nd Symposium on Plasma Processing, 26 Jan. 2005
Affiliated academic society
Research Themes
- Selective Chemical-Vapor Deposition of Metal Films using Cu-Iodide
Grant-in-Aid for Scientific Research (C)
Ibaraki University
Apr. 2022 - Mar. 2025 - 自己解離型化学気相法による金属層の選択形成
Feb. 2020 - Mar. 2023 - Selective Cu-deposition using CuI as precursor
基盤研究(C)
Apr. 2017 - Mar. 2020 - Development of THz-emitter using Sugar Crystal
Grant-in-Aid for Challenging Exploratory Research
Ibaraki University
01 Apr. 2012 - 31 Mar. 2015 - Development of plasma synthesis technology for advanced complex compound materials based on mass-selective momentum control
Grant-in-Aid for Scientific Research (B)
Ibaraki University
2004 - 2006 - Study of CCD Register for High-Sensitivity and Low-Dark Current Imaging Devices
Grant-in-Aid for Scientific Research (C)
IBARAKI UNIVERSITY
2001 - 2002
Industrial Property Rights
- 特開2023-50573, 特願2021-160747, 成膜方法及び成膜装置
布瀬暁志、久保田雄介、山内智 - 6711645, 特願2016-35760, 銅の成膜装置、銅の成膜方法、銅配線形成方法、銅配線
山内 智 - 6061197, テラヘルツ波を用いた異物検査装置及びその方法
和久井一則、今井 洋、山内 智 - 特許第4817336, 特開2009-198278, 特願2008-39555, テラヘルツ電磁波を用いた試料の構造分析方法およびテラヘルツ電磁波を用いた試料の構造分析装置
今井 洋,山内 智 - 特許第3283703号, 平成06年特許願第218743号, 半導体素子の製造方法
- US 6,284,587 B1, FABRICATING METHOD FOR SEMICONDUCTOR DEVICE
- 特開2002-266089, 特願2001-63342, 水の分解方法及びその装置
- 特許第3117320号, 平成05特許願第091618号, キャパシタ及びその製造方法
