Haruhiko UDONOProfessor
■Researcher basic information
Organization
- College of Engineering Department of Electrical and Electronic Systems Engineering
- Graduate School of Science and Engineering（Master's Program） Major in Electrical and Electronic Systems Engineering
- Graduate School of Science and Engineerin（Doctoral Program） Major in Complex Systems Science
- Faculty of Applied Science and Engineering Domain of Electrical and Electronic Systyems Engineering
Research Areas
- Nanotechnology/Materials, Crystal engineering, Crystal engineering
- Nanotechnology/Materials, Applied materials, Applied materials
- Natural sciences, Semiconductors, optical and atomic physics
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering, Electronic materials/Electric materials
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering, Semiconductor Engineering, Semiconductor Materials and Devices
- Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment, Semiconductor Engineering, Semiconductor Materials and Devices
Research Keyword
Educational Background
Career
- Apr. 2018 - Present, Ibaraki University, College of Engineering Department of Electrical and Electronic Systems Engineering, Professor
- Apr. 2018 - Present, Ibaraki University, Department of Electrical and Electronic Systems Engineering, Graduate School of Science and Engineering, Professor
- Apr. 2012 - Mar. 2018, Ibaraki University, Department of Electrical and Electronics, College of Engineering, Professor
- Apr. 2007 - Mar. 2012, Associate Professor, Ibaraki University
- Jul. 2008 - Feb. 2009, University of California, Berkeley, Visiting Researcher
- Apr. 2004 - Mar. 2007, Associate Professor, Ibaraki University
- Apr. 2001 - Mar. 2004, Guest Researcher of TARA Project, Tsukuba University
- Apr. 1996 - Mar. 2004, Research Associate, Ibaraki University
Member History
- Jan. 2025 - Present, Vice Chiar, JSAP Professional Group of Semiconducting Silicide and related materials
- Sep. 2020 - Present, Council member, Thermoelectric Society of Japan
- Jan. 2021 - Dec. 2024, Vice Chiar, JSAP Professional Group of Semiconducting Silicide and related materials
- Apr. 2020 - Sep. 2023, Program Committee, The Japan Society of Applied Physics
- Jan. 2019 - Dec. 2021, Vice Chiar, JSAP Professional Group of Semiconducting Silicide and related materials
- Jan. 2010 - Dec. 2012, Chair, JSAP Professional Group of Semiconducting Silicide and Related materials
External link
Message from Researchers
(Message from Researchers)
(研究経歴)
1990年-1996年：InGaP系混晶を用いた緑色ダイオードの開発
1996年-2000年：ZnSeバルク単結晶の成長とその化学量論組成の評価法の開発
2000年-現在：β-FeSi2バルク単結晶の育成とその応用
2001年-現在：シリサイド半導体を用いた近赤外発光受光素子の開発
2007年-現在：シリサイド熱発電素子の開発
■Research activity information
Award
- Nov. 2024, Best presentation student award, Ibaraki branch, IEEJ, 低温・バイアス下におけるマグネシウムシリサイドフォトダイオードの分光感度, 電気学会東京支部茨城支所
R Furuta;H Katsumata;S Sakane;H Udono - Nov. 2024, Best presentation student award, Ibaraki branch, IEEJ, シリコン基板上のInSbのスパッタ成膜, 電気学会東京支部茨城支所
A Koganeszawa;H Kubota;A Ayukawa;S Sakane;H Udono - Nov. 2024, The 21st International Conference on Flow Dynamics (ICFD 2024), Best Presentation Award for Young Researcher, Epitaxial Growth of High-quality Mg3Sb2-based Thin Films and Their Thermoelectric Properties, Institute of Fluid Science, Tohoku University
Akito Ayukawa;N Kiridoshi;T Kuriyama;W Yamamoto;A Yasuhara;H Udono;S Sakane - Mar. 2024, JSAP 2024 Spring, Young Scientist Presentation Award, サファイア基板上エピタキシャルMg3Sb2薄膜の熱電特性評価, The Japan Society of Applied Physics (JSAP)
坂根 駿也;鮎川;瞭仁;切通 望;綿引 詩門;鵜殿 治彦 - Sep. 2023, Fall meeting 2023, Young Scientist Presentation Awards, 熱光発電に向けたMg2Siフォトダイオードの電流電圧特性の評価, The Japan Society of Applied Physics (JSAP)
D. Miyago;S. Sakane;H. Udono - Dec. 2022, Semicon Japan 2022, Academia Awards, Sponsor Award, マグネシウムシリサイド半導体を用いた赤外線センサと熱光発電セルの開発, SEMI, Japan
Semiconductor Laboratory, Haruhiko UDONO;Rikuto Nakamura;Daisuke Miyago
Publisher - Dec. 2022, Best presentation student award, Ibaraki branch, IEEJ, 反応性イオンエッチングによるMg2Si基板表面の微細加工, 電気学会東京支部茨城支所
中村陸斗(中村陸斗、鵜殿治彦)
Japan society - Dec. 2022, Best presentation student award, Ibaraki branch, IEEJ, Mg2SiウェハのXRCピークとX線回折角の関係, 電気学会東京支部茨城支所
梅原 翼(梅原 翼;鵜殿治彦)
Japan society - Dec. 2021, Best presentation student award, Ibaraki branch, IEEJ, メッシュ状電極Mg2Siフォトダイオードの温度依存性, 電気学会東京支部茨城支所
市川雄大(市川雄大;吉田美沙、津谷大樹、鵜殿治彦)
Japan society - Dec. 2021, Best presentation student award, Ibaraki branch, IEEJ, リンイオン注入プロセスによるMg2Si-PDの作製, 電気学会東京支部茨城支所
中村陸斗(中村陸斗、鵜殿治彦)
Japan society - Jul. 2019, Young Scientist Award (APAC-Silicide 2019), Comparison of crystalline quality and electrical property of Mg2Si crystals grown using PBN and PG graphite crucible, Committee of APAC-Silicide 2019, JSAP
Y. Fuse(Y. Fuse;R. Masubuchi;T. Ishikawa;K. Gosyuu;and H. Udono)
International society - Nov. 2018, Best presentation student award, Ibaraki branch, IEEJ, OCVD法によるMg2Siのライフタイム評価, 電気学会東京支部茨城支所
高橋史也(高橋史也;鵜殿治彦)
Japan society - Nov. 2018, Best presentation student award, Ibaraki branch, IEEJ, Znを添加したMg2Sn結晶の融液成長, 電気学会東京支部茨城支所
佐藤彰(佐藤彰;小谷野慈;菅原劉丞;鵜殿治彦)
Japan society - Nov. 2017, Best presentation student award, Ibaraki branch, IEEJ, 溶融Mg2Si結晶の添加不純物による酸化効果への影響, 電気学会東京支部茨城支所
金田大(金田大;今野嵩;鵜殿治彦)
Japan society - Dec. 2016, Best presentation student award, Ibaraki branch, IEEJ, Mg2Siを用いたフォトダイオードの光検出器としての性能評価, 電気学会東京支部茨城支所
秋山智洋(秋山智洋;鬼沢雄馬;中野達哉;鵜殿 治彦;谷川俊太郎;津谷大樹)
Japan society - Jul. 2016, Young Scientist Award (APAC-Silicide 2016), Committee of APAC-Silicide 2016, JSAP
Syu Konno(S. Konno;T. Otsubo;K. Nakano;H. Udono
International society - Mar. 2015, Young Scientist Presentation Awards, The Japan Society of Applied Physics
Nobuhiko Hori;Takafumi Esaka;Haruhiko Udono
Japan society - Nov. 2014, Best presentation student award, Ibaraki branch, IEEJ, Mg2Si溶融結晶の格子熱伝導率の低減と熱電性能の改善, 電気学会東京支部茨城支所
大坪翼, 大竹秀明, 鵜殿治彦 - Nov. 2014, Best presentation student award, Ibaraki branch, IEEJ, Mg2Si溶融結晶の格子熱伝導率の低減と熱電性能の改善, 電気学会東京支部茨城支所
石井慶祐, 大竹秀明, 大坪翼, 鵜殿治彦 - Jul. 2014, Young Scientist Award (ICSS-Silicide 2014), Evaluation of Mg2Si pn-junction depth by sputter etching, Committee of ICSS-Silicide 2014, JSAP
N. Hori;S. Hasunuma;F. Esaka;H. Udono - Nov. 2013, Best presentation student award, Ibaraki branch, IEEJ, マグネシウムシリサイド単結晶への不純物共添加効果, 電気学会東京支部茨城支所
大竹秀明,蓮沼慎,鵜殿治彦 - Nov. 2013, Best presentation student award, Ibaraki branch, IEEJ, Mg2Si pn接合ダイオードの接合深さによる受光特性への影響, 電気学会東京支部茨城支所
堀信彦,鵜殿治彦,竹崎誠朗,大徳健太 - Nov. 2013, Best presentation student award, Ibaraki branch, IEEJ, Mg2Si pn接合ダイオードの分光特性改善, 電気学会東京支部茨城支所
大徳 健太,竹崎 誠朗,打越 雅仁,鵜殿 治彦 - Nov. 2013, Best presentation student award, Ibaraki branch, IEEJ, Mg2Si溶融結晶の格子熱伝導率の低減と熱電性能の改善, 電気学会東京支部茨城支所
大坪翼, 大竹秀明, 鵜殿治彦 - 28 Jul. 2013, Young Scientist Award (Asia-Pasific Conference on Green Technology with Silicides and Related Materials, APAC-Silicide 2013), Committee of APAC-Silicide 2013, JSAP
S. Kojima;M. Imai;T. Kume;K. Tanigaki;H. Tajima;H. Udono - Nov. 2012, Best presentation student award, Ibaraki branch, IEEJ, 不純物を添加したマグネシウムシリサイド結晶の成長, 電気学会東京支部茨城支所
蓮沼慎、石田大輔、鵜殿治彦 - Nov. 2010, Best presentation student award, Ibaraki branch, IEEJ, 赤外受光素子用高純度MgSi結晶の電気特性, 電気学会東京支部茨城支所
八島研一、高橋良幸、御殿谷真、鵜殿治彦 - Nov. 2010, Best presentation student award, Ibaraki branch, IEEJ, MgSiの結晶性と熱伝導率の関係, 電気学会東京支部茨城支所
國政恵美、高橋良幸、石田大輔、八島研一、磯田幸宏、上田聖、鵜殿治彦 - Dec. 2007, Best presentation student award, Ibaraki branch, IEEJ, Growth and characterization of Mg2Sn, Ibaraki branch, IEEJ
K. Kushida;K. Sugimoto;H. Koguchi;M. Midonoya and H. Udono - Nov. 2005, Best presentation student award, Ibaraki branch, IEEJ, Thermoelectrical properties of single crystalline beta-FeSi2, Ibaraki branch, IEEJ
H. Suzuki;H. Udono. I. Kikuma - Jan. 2004, Young Scientist Award (Takayanagi Kenjiro Foundation), 波長1.5μｍ帯で発光するＳｉ系発光ダイオードに関する研究, Takayanagi Kenjiro Foundation
Haruhiko UDONO
Publisher
Paper
- Unveiling the effects of Sb or Bi doping on lattice strain and Raman spectra in Mg2Si single crystals
Kosuke Shimano; Shunya Sakane; Takehiro Ota; Kenichiro Takakura; Motoharu Imai; Haruhiko Udono
Journal of Applied Physics, 07 Jun. 2025 - 〔Major achievements〕Fabrication of Mg2Si linear photodiode arrays for SWIR imaging
Haruhiko Udono; Kaito Ojima; Naoki Imaizumi; Hideto Takei; Shunya Sakane, Lead, SPIE
Proc. of SPIE, Optical Components and Materials XXII, 01 Apr. 2025, [Reviewed] - Molecular interaction-induced thermoelectric performance enhancement of graphene thin films with an agglomerated conductive polymer
Keito Uchida; Shunya Sakane; Takashi Shimizu; Akito Ayukawa; Haruhiko Udono; Hideki Tanaka
Materials Advances, 2025 - 〔Major achievements〕Evaluation of Mg2Si TPV cells fabricated on n-Mg2Si substrate by thermal diffusion of Ag acceptor
Takumi Shimizu; Daisuke Miyago; Kosuke Shimano; Shunya Sakane; Haruhiko Udono, Corresponding
Japanese Journal of Applied Physics, 05 Dec. 2024, [Reviewed] - 〔Major achievements〕Record High Thermoelectric Figure of Merit of a III-V Semiconductor InGaSb by Defects Engineering via the Addition of Excess Constituent Elements
Nirmal Kumar Velu; Yasuhiro Hayakawa; Haruhiko Udono; Shunya Sakane; Yuko Inatomi
ACS Applied Materials and Interfaces, 04 Sep. 2024, [Reviewed] - 〔Major achievements〕Epitaxial growth of high-quality Mg3Sb2 thin films on annealed c-plane Al2O3 substrates and their thermoelectric properties
Akito Ayukawa; Nozomu Kiridoshi; Wakaba Yamamoto; Akira Yasuhara; Haruhiko Udono; Shunya Sakane, Abstract
High-quality epitaxial Mg3Sb2 thin films are promising thermoelectric materials to enable practical applications of compact and environmentally friendly thermoelectric conversion at room temperature. In this study, high-quality single-crystal Mg3Sb2 with high c-plane orientation were epitaxially grown directly on annealed c-Al2O3 substrates without passive layers. These thin films exhibited three times higher thermoelectric power factor than ever reported values due to high carrier mobility. The ultra-smooth surface of the annealed c-Al2O3 substrate facilitated the formation of high-quality Mg3Sb2 thin films without passive layers or polycrystalline interfaces that could be carrier scatters., IOP Publishing
Applied Physics Express, accepted, 22 May 2024, [Reviewed] - 〔Major achievements〕Precise synthesis of copper selenide nanowires with tailored Cu vacancies through photo-induced reduction for thermoelectric applications
Shunya Sakane; Tatsuki Miura; Kazuki Munakata; Yusuke Morikawa; Shunichiro Miwa; Riku Yamanaka; Toshiki Sugai; Akito Ayukawa; Haruhiko Udono; Hideki Tanaka, Royal Society of Chemistry (RSC)
Nanoscale Advances, Apr. 2024, [Reviewed] - 〔Major achievements〕Control of Ag acceptor concentration and pn-junction depth in single crystalline Mg2Si photodiodes
Shunya Sakane; and Haruhiko Udono, Corresponding
AIP Advances, Nov. 2023, [Reviewed] - 〔Major achievements〕Effects of Te-doping on the thermoelectric properties of InGaSb crystals
V. Nirmal Kumar; Y. Hayakawa; H. Udono; and Y. Inatomi
J Mater Sci: Mater Electron, 05 Jun. 2023, [Reviewed] - 〔Major achievements〕Thermoelectric properties of Zn-doped In0.95Ga0.05Sb crystals grown by directional solidification
V. Nirmal Kumar; Y. Hayakawa; H. Udono; and Y. Inatomi
Journal of Materials Science, 10 May 2023, [Reviewed] - 〔Major achievements〕Study of deep levels in the Mg2Si grown by vertical Bridgman method
Kouki Fukushim; Naoki Mizunuma; Tatsuya Uematsu; Kyoko Shimizu; Takehiro Ota; Isao Tsunoda; Haruhiko UDONO and Kenichiro Takakura, Abstract
The electrical characteristics of a Mg2Si p–n junction diode was investigated. The n-Mg2Si substrate was grown by using the vertical-Bridgeman method. A p–n junction was fabricated by the thermal diffusion of Ag as an acceptor. The reverse current of the Au/Ag electrode diode was larger than that of the Ag electrode diode. The trap levels in the n-Mg2Si bulk were investigated using deep-level transient spectroscopy. The magnitude of DLTS signal of E1 with the Au/Ag electrode diode was larger than that for the signals at the other trap levels. The E1 level corresponds to an Au-related trap that diffuses via thermal annealing during the alloying process. The open-circuit-voltage-decay study suggests the existence of a minority-carrier trap in n-Mg2Si. The minority-carrier lifetime was shorter for Au/Ag electrode diodes. Therefore, Au may be involved in the formation of minority-carrier traps, as well as in the formation of majority-carrier traps., IOP Publishing
Jpn. J. Appl. Phys., 01 May 2023, [Reviewed] - 〔Major achievements〕Effect of Impurity Doping on Thermoelectric Properties of Melt-Grown Mg2Sn Crystals
Hidetsugu Motoki; Naofumi Tsuchiya; Sho Sato; Megumu Koyano; and Haruhiko Udono, Corresponding
JJAP Conf. Proc., 26 Apr. 2023, [Reviewed] - 〔Major achievements〕Growth of 2-inch diameter Mg2Si crystal by the VGF method under Ar normal pressure
Tsubasa Umehara; Naoki Mizunuma; and Haruhiko Udono, Corresponding
JJAP Conf. Proc., 26 Apr. 2023, [Reviewed] - Analysis of grain growth behavior of multicrystalline Mg2Si
Deshimaru Takumi; Yamakoshi Kenta; Kutsukake Kentaro; Kojima Takuto; Umehara Tsubasa; Udono Haruhiko; Usami Noritaka
Jpn. J. Appl. Phys., 28 Nov. 2022, [Reviewed] - 〔Major achievements〕Effects of dopant type and concentration on surface recombination velocity in hydrogen-terminated silicon
Nobue Araki; Haruhiko Udono, Abstract
Isolating the effects of the type and concentration of the dopant in lightly doped regions in the reaction between hydrogen-terminated silicon surface and atmospheric impurities in air is very difficult. However, changes in the surface recombination sites can be analyzed accurately through recombination lifetime measurements performed using the microwave photoconductive decay method. Thus, we investigated variations in the effective recombination lifetime in hydrogen-terminated silicon surfaces over time in air for different dopant types and concentrations. For both p-type and n-type silicon wafers, surface recombination velocity, S, increased with decreasing resistivity, namely, increasing dopant concentration. The time-dependent variations of the S for the p-type wafers decreased, and those for the n-type wafers increased with decreasing resistivity. Thus, it was shown that the time-dependent variation of the S depends on the type and concentration of the dopant used., IOP Publishing
Japanese Journal of Applied Physics, 19 Aug. 2022, [Reviewed] - 〔Major achievements〕Silicon meets group-II metals in energy and electronic applications—How to handle reactive sources for high-quality films and bulk crystals
T. Suemasu; K.O. Hara; H. Udono; Manabu and M. Imai
J. Appl. Phys., 20 May 2022, [Reviewed], [Invited] - 〔Major achievements〕Local structure analysis of Sb, Bi, and Ag dopant atoms in Mg2Si semiconductor by,x-ray absorption spectroscopy and first- principles calculation
Mamoru Kitaura; Shinta Wantanabe; Toshiaki Ina; Motoharu Imai; Haruhiko Udono; Manabu Ishizaki; Hisanori Yamane; Taku Tanimoto; and Akimasa Ohnishi, AIP Publishing
J. Appl. Phys., 30 Dec. 2021, [Reviewed] - 〔Major achievements〕Single crystal growth of small-angle-grain-boundary-free Mg2Si via vertical Bridgman method
Ryohei Masubuchi; Babak Alinejad; Yoshiaki Hara; Haruhiko Udono, Last, Elsevier BV
Journal of Crystal Growth, 17 Jul. 2021, [Reviewed] - Evaluation of Magnesium Tin Silicide Sintered Bodies Prepared by Liquid-Phase Pressure-Less Sintering
Inoue, H.; Kato, M.; Udono, H.; Kobayashi, T.
Materials Transaction, 02 Apr. 2021, [Reviewed] - Power Generation Efficiency of Thermoelectric Elements with a Trapezoidal Section
Inoue, H.; Kato, M.; Udono, H.; Kobayashi, T.
Journal of Electric Materials, 29 Oct. 2020, [Reviewed] - 〔Major achievements〕Interface driven energy-filtering and phonon scattering of polyaniline incorporated ultrathin layered molybdenum disulphide nanosheets for promising thermoelectric performance
R. Abinaya a; J. Archana; S. Harish; M. Navaneethan; C. Muthamizhchelvan; S. Ponnusamy; H. Udono; R. Sugahara; Y. Hayakawa; M. Shimomura
Journal of Colloid and Interface Science, 23 Sep. 2020, [Reviewed] - First principle band calculations of Mg2Si thin films with (001) and (110) orientations
Masahisa Takizawa; Takashi Komine; Haruhiko Udono; and Tomosuke Aono, Japan Society of Applied Physics
JJAP Conf. Proc., Aug. 2020, [Reviewed] - Observation of Magnesium-Induced Crystallization (Mg-MIC) of a-Si Thin Film
Takashi Ikehata; Ryota Sasajima; Motomu Saijo; Naoyuki Sato; Haruhiko Udono, Japan Society of Applied Physics
JJAP Conf. Proc., Aug. 2020, [Reviewed] - Semiconducting Silicides Green Technology
Haruhiko UDONO, Institute of Physics Publishing
Japanese Journal of Applied Physics, 01 Apr. 2020 - An Approach to Optimize the Thermoelectric Properties of III–V Ternary InGaSb Crystals by Defect Engineering via Point Defects and Microscale Compositional Segregations
Velu Nirmal Kumar; Yasuhiro Hayakawa; Haruhiko Udono; Yuko Inatomi, American Chemical Society (ACS)
Inorganic Chemistry, 03 Sep. 2019, [Reviewed] - 〔Major achievements〕Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy
Nakamura Minoru; Murakami Susumu; Udono Haruhiko, Japan Society of Applied Physics
Applied Physics Express, 01 Feb. 2019, [Reviewed] - Enhanced thermoelectric properties of InSb: Studies on In/Ga doped GaSb/InSb crystals
V. Nirmal Kumar; Y. Hayakawa; H. Udono; Y. Inatomi
Intermetallics, 01 Feb. 2019, [Reviewed] - Evaluation of carrier lifetime in Mg2Si pn-juction photodiode using OCVD method
Haruhiko Udono and Fumiya Takahashi, Lead
Proceedings of 8th Silicon Forum, 19 Nov. 2018 - Characterization of iron in silicon by low-temperature photoluminescence and deep-level transient spectroscopy
Minoru Nakamura; Susumu Murakami; Haruhiko Udono, American Institute of Physics Inc.
Journal of Applied Physics, 14 Mar. 2018, [Reviewed] - Crystal growth of Mg2Si for IR-detector
Toshio Tokairin; Junya Ikeda; Haruhiko Udono
JOURNAL OF CRYSTAL GROWTH, Jun. 2017, [Reviewed] - Influence of Humidity, Volume Density, and MgO Impurity on Mg2Si Thermoelectric-Leg
Y. Mito; A. Ogino; S. Konno; H. Udono
JOURNAL OF ELECTRONIC MATERIALS, May 2017, [Reviewed] - Optical transmittance and reflectance studies and evidence of weak electron-phonon interaction in Type-I Ge clathrate Ba8Ga16Ge30
Haruhiko Udono; Motoharu Imai; Shuhei Kojima; Tetsuji Kume; Katsumi Tanigaki; Hiroyuki Tajima
JOURNAL OF APPLIED PHYSICS, May 2017, [Reviewed] - Observation of pn-junction depth in Mg2Si diodes fabricated by short period thermal annealing
Y. Onizawa; T. Akiyama; N. Hori; F. Esaka and Haruhiko Udono
JJAP Conf. Proc., 01 May 2017, [Reviewed] - Fabrication of Mg2Si pn-junction Photodiode with Shallow Mesa-structure and Ring Electrode
T. Akiyama; N. Hori; S. Tanigawa; D. Tsuya and Haruhiko Udono
JJAP Conf. Proc., 01 May 2017, [Reviewed] - Oxidation resistance of impurity doped Mg2Si grown from the melt
Shu Konno; Tsubasa Otubo; Kohei Nakano and Haruhiko Udono
JJAP Conf. Proc., 01 May 2017, [Reviewed] - Preparation and thermoelectric properties of iron disilicide
Isoda, Y.; Udono, H.
Materials, Preparation, and Characterization in Thermoelectrics, 2017 - Effects of varying indium composition on the thermoelectric properties of InxGa1-xSb ternary alloys
V. Nirmal Kumar; M. Arivanandan; T. Koyoma; H. Udono; Y. Inatomi; Y. Hayakawa
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, Oct. 2016, [Reviewed] - Thin film of guest-free type-II silicon clathrate on Si(111) wafer
Tetsuji Kume; Fumitaka Ohashi; Kentaro Sakai; Atsuhiko Fukuyama; Motoharu Imai; Haruhiko Udono; Takayuki Ban; Hitoe Habuchi; Hidetoshi Suzuki; Tetsuo Ikari; Shigeo Sasaki; Shuichi Nonomura
THIN SOLID FILMS, Jun. 2016, [Reviewed] - X-ray photoelectron spectroscopy studies on single crystalline beta-FeSi2
Wei Mao; Haruhiko Udono; Kenji Yamaguchi; Takayuki Terai; Hiroyuki Matsuzaki
THIN SOLID FILMS, May 2016, [Reviewed] - Non-destructive depth analysis of the surface oxide layer on Mg2Si with XPS and XAS
Esaka, F.; Nojima, T.; Udono, H.; Magara, M.; Yamamoto, H.
Surf. Interface Anal., 22 Feb. 2016, [Reviewed] - Observation of pn-junction depth in Mg2Si photodiode fabricated by thermal diffusion of Ag acceptor
Haruhiko Udono; Nobuhiko Hori; Tomohiro Akiyama; Yuuma Onizawa; Tsubasa Ootsubo; Fumitaka Esaka
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016, [Reviewed] - Transformation of the nickel donor center by annealing in silicon measured by deep-level transient spectroscopy
Minoru Nakamura; Susumu Murakami; Haruhiko Udono
JAPANESE JOURNAL OF APPLIED PHYSICS, Jan. 2016, [Reviewed] - Thermal expansion of semiconducting silicides beta-FeSi2 and Mg2Si
Motoharu Imai; Yukihiro Isoda; Haruhiko Udono
INTERMETALLICS, Dec. 2015, [Reviewed] - Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing (vol 212, pg 715, 2015)
Masahiro Mori; Yasuhiko Shimotsuma; Tomoaki Sei; Masaaki Sakakura; Kiyotaka Miura; Haruhiko Udono
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Aug. 2015, [Reviewed] - Crystal growth and characterization of Mg2Si for IR-detectors and thermoelectric applications
Haruhiko Udono; Hiroyuki Tajima; Masahito Uchikoshi; Masaru Itakura
JAPANESE JOURNAL OF APPLIED PHYSICS, Jul. 2015, [Reviewed] - Characterization of band structure of K8Ga8Si38 clathrate by optical measurement
Masaru Iioka; Haruhiko Udono; Motoharu Imai; and Masato Aoki
JJAP Conf. Proc., 08 Jun. 2015, [Reviewed] - Fabrication and characterization of Mg2Si pn-junction photodiode with a ring electrode
K. Daitoku; M. Takezaki; S. Tanigawa; D. Tsuya; H. Udono
JJAP Conf. Proc., 08 Jun. 2015, [Reviewed] - Tailoring thermoelectric properties of nanostructured crystal silicon fabricated by infrared femtosecond laser direct writing
Masahiro Mori; Yasuhiko Shimotsuma; Tomoaki Sei; Masaaki Sakakura; Kiyotaka Miura; Haruhiko Udono
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Apr. 2015, [Reviewed] - Nanostructuring in indirect band-gap semiconductor using IR femtosecond double pulses
Shimotsuma Y; Sei T; Sakakura M; Miura K; Udono H
Journal of Laser Micro Nanoengineering, 15 Jan. 2015, [Reviewed] - Band structure characterization of KGaSi clathrates by optical measurement
Masaru Iioka; Haruhiko Udono; Motoharu Imai; Masato Aok
JJAP Conference Proceedings, 2015, [Reviewed] - Surface aspects of discolouration in Bisphenol A Polycarbonate (BPA-PC), used as lens in LED-based products
M. Yazdan Mehr; W. D. van Driel; H. Udono; G. Q. Zhang
OPTICAL MATERIALS, Nov. 2014, [Reviewed] - Depth profiles of the nickel donor center in p-type silicon diffused with dilute nickel measured by deep-level transient spectroscopy
Minoru Nakamura; Susumu Murakami; Haruhiko Udono
JAPANESE JOURNAL OF APPLIED PHYSICS, Sep. 2014, [Reviewed] - Thermoelectric Properties of p-Type Mg2Si0.25Sn0.75 Doped with Sodium Acetate and Metallic Sodium
Satoki Tada; Yukihiro Isoda; Haruhiko Udono; Hirofumi Fujiu; Shunji Kumagai; Yoshikazu Shinohara
JOURNAL OF ELECTRONIC MATERIALS, Jun. 2014, [Reviewed] - Convenient Melt-Growth Method for Thermoelectric Mg2Si
K. Kambe; H. Udono
JOURNAL OF ELECTRONIC MATERIALS, Jun. 2014, [Reviewed] - Preparation and thermoelectric properties of Mg2Si0.9-xSnx Ge0.1
S. Tada; Y. Isoda; H. Udono; H. Fujiu; S. Kumagai; Y. Shinohara
Physica Status Solidi (C) Current Topics in Solid State Physics, Dec. 2013, [Reviewed] - Solid-phase growth of Mg2Si by annealing in inert gas atmosphere
Takashi Ikehata; Tatsuya Ando; Takuya Yamamoto; Yuta Takagi; Naoyuki Sato; Haruhiko Udono
Physica Status Solidi (C) Current Topics in Solid State Physics, Dec. 2013, [Reviewed] - Solution growth and optical characterization of Mn11Si19
Masaru Iioka; Daisuke Ishida; Shyuhei Kojima; Haruhiko Udono
Physica Status Solidi (C) Current Topics in Solid State Physics, Dec. 2013, [Reviewed] - Solid evidence for magnetic moment enhancement in micro-particles of Mn11Si19
Kiyotaka Hammura; Haruhiko Udono; Tomosuke Aono
Physica Status Solidi (C) Current Topics in Solid State Physics, Dec. 2013, [Reviewed] - Spectral characterization of Mg2Si pn-junction diode depended on RTA periods
M. Takezaki; Y. Yamanaka; M. Uchikoshi; H. Udono
Physica Status Solidi C, 13 Nov. 2013, [Reviewed] - Energy level(s) of the dissociation product of the 1.014 eV photoluminescence copper center in n-type silicon determined by photoluminescence and deep-level transient spectroscopy
Minoru Nakamura; Susumu Murakami; Haruhiko Udono
JOURNAL OF APPLIED PHYSICS, Jul. 2013, [Reviewed] - シリサイド半導体の結晶成長とデバイス応用
鵜殿 治彦, 豊富な資源量の元素で構成されるシリサイド半導体は、材料を大量消費するエネルギー利用の分野において資源・環境リスクの面から優れたポテンシャルを秘めている。本稿では、我々が進めてきたβ-FeSi_2とMg_2Siの結晶成長技術と基本的な電気・光学特性、および熱電変換や熱光発電,赤外センサを目指したデバイス開発動向について紹介する。, 一般社団法人電子情報通信学会
電子情報通信学会技術研究報告. ED, 電子デバイス, 09 May 2013, [Reviewed] - Infrared photoresponse from pn-junction Mg2Si diodes fabricated by thermal diffusion
Haruhiko Udono; Yusuke Yamanaka; Masahito Uchikoshi; Minoru Isshiki
Journal of Physics and Chemistry of Solids, Feb. 2013, [Reviewed] - Thermoelectric properties of Na-doped Mg2Si0.25Sn0.75
S. Tada; Y. Isoda; H. Udono; H. Fujiu; S. Kumagai and Y. Shinohara, We have investigated the thermoelectric properties of Na-doped Mg2Si0.25Sn0.75 solid solutions prepared by liquid-solid reaction and hot-pressing methods. Na doping was carried out by mixing sodium acetate (CH3COONa) into the starting materials Mg (nominal purity: 99.9 %), Sn (99.999 %) granules, and Si powder (99.9999 %). The Na-doped samples had p-type conductivity with positive signs of Seebeck and Hall coefficients. Furthermore, hole concentrations increased rapidly with an increase in the amount of Na doping. These results revealed that the Na atoms acted as acceptors in Mg2Si0.25Sn0.75. The Seebeck coefficient of Na-doped samples showed positive values between 300 and 750 K. A maximum power factor of 0.88 × 10-3 WmK-2 was observed for the Mg2Na0.020Si0.25Sn0.75 sample at 500 K. The dimensionless figure of merit ZT reached 0.17 at 450 K for all Na-doped samples., The Materials Research Society of Japan
Trans. Mat. Res. Soc. Jpn., 07 Jan. 2013, [Reviewed] - Transformation reactions of copper centers in the space-charge region of a copper-diffused silicon crystal measured by deep-level transient spectroscopy
Minoru Nakamura; Susumu Murakami; and Haruhiko Udono
Journal of Applied Physics, 27 Sep. 2012, [Reviewed] - Copper centers in copper-diffused n-type silicon measured by photoluminescence and deep-level transient spectroscopy
Minoru Nakamura; Susumu Murakami; and Haruhiko Udono
Applied Physics Letters, 27 Jul. 2012, [Reviewed] - Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy
K. Noda; Y. Terai; N. Miura; H. Udono; Y. Fujiwara
Physica Procedia, Feb. 2012, [Reviewed] - Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy
K. Noda; Y. Terai; N. Miura; H. Udono; Y. Fujiwara
Physics Procedia, 2012, [Reviewed] - Bandgap modifications by lattice deformations in beta-FeSi2 epitaxial films
Y. Terai; K. Noda; K. Yoneda; H. Udono; Y. Maeda; Y. Fujiwara
THIN SOLID FILMS, Oct. 2011, [Reviewed] - Band-gap Modifications of β-FeSi2 Epitaxial Films by Lattice Deformations
Y. Terai; K. Noda; K. Yoneda; H. Udono; Y. Maeda; and Y. Fujiwara
Thin Solid Films, Oct. 2011, [Reviewed] - Magnetisation of bulk Mn11Si19 and Mn4Si7
K. Hammura; H. Udono; I. J. Ohsugi; T. Aono; E. De Ranieri
Thin Solid Films, Oct. 2011, [Reviewed] - Solution Growth and Thermoelectric Properties of Single-Phase MnSi1.75−x
Udono, H.; Nakamori, K.; Takahashi, Y.; Ujiie, Y.; Ohsugi, I.J.; Iida, T.
J. Electron. Mat., Jul. 2011, [Reviewed] - Photoemission study on the valence band of a ß-FeSi2 thin film using synchrotron radiation
H Fujimoto; K. Ogawa; K. Takarabe; H. Udono; H. Sugiyama; J. Azuma; K. Takahashi and M. Kamada
Dalton Trans., Jul. 2011, [Reviewed] - Semiconducting behavior of type-I Si clathrate K8Ga8Si38
M. Imai; A. Sato; H. Udono; Y. Imai; H. Tajima
Dalton Trans., May 2011, [Reviewed] - Surface analysis of single-crystalline β-FeSi2
Y. Yamada; W. Mao; H. Asaoka; H. Yamamoto; F. Esaka; H. Udono and T. Tsuru
Physica Procedia, Jan. 2011, [Reviewed] - Electrical Properties of Ca2Si Sintered Compact Synthesized by Spark Plasma Sintering
C. Wen; T. Nonomura; A. Kato; Y. Kenichi; H. Udono; K. Isobe; M. Otake; Y.Kubota; T. Nakamura; Y. Hayakawa; and H. Tatsuoka
Physica Procedia, Jan. 2011, [Reviewed] - Surface characterization of homoepitaxial β-FeSi2 film on β-FeSi2 (111) substrate by X-ray photoelectron and absorption spectroscopy
F. Esaka; H. Yamamoto; H. Udono; N. Matsubayashi; K. Yamaguchi; S. Shamoto; M. Magara and T. Kimura
Physica Procedia, Jan. 2011, [Reviewed] - Preparation of schottky contacts on n-type Mg2Si single crystalline substrate
K.Sekino; M.Midonoya; H. Udono; Y. Yamada
Physica Procedia, Jan. 2011, [Reviewed] - Surface structures of β-FeSi2 formed by heat-treatment in ultra-high vacuum and their influence on homoepitaxial growth
S. Matsumura; K. Ochiai; H. Udono; F. Esaka; K. Yamaguchi; H. Yamamoto; K. Houjo
Physica Procedia, Jan. 2011, [Reviewed] - Spectroscopic characterization of β-FeSi2 single crystals and homoepitaxial β-FeSi2 films by XPS and XAS
F. Esaka; H. Yamamoto; H. Udono; N. Matsubayashi; K. Yamaguchi; S. Shamoto; M. Magara; T. Kimura
Appl. Surf. Sci., Jan. 2011, [Reviewed] - Effect of temperature modulation during temperature gradient,solution growth of β-FeSi2
Y. Ujiie; K. Nakamori; S. Mashiko; H. Udono; T. Nagata
Physica Procedia, Jan. 2011, [Reviewed] - The local structure of α-FeSi2 under high pressure
Y.Mori; H. Nakano; G. Sakane; G. Aquilanti; H. Udono; K. Takarabe
phys. stat. sol. (b), May 2009, [Reviewed] - Surface preparation and characterization of single crystalline β-FeSi2
Y. Yamada; I. Wakaya; S. Ohuchi; H. Yamamoto; H. Asaoka; S. Shamoto; H. Udono
Surface Science, Sep. 2008, [Reviewed] - Crystal growth of ZnO bulk by CVT method using PVA
H. Udono; Y. Sumi; S. Yamada; I. Kikuma
JOURNAL OF CRYSTAL GROWTH, Apr. 2008, [Reviewed] - Solution Growth and Low-Temperature Thermoelectric Properties of Single Crystalline ß-FeSi2
H. Udonoa; H. Suzuki; K. Goto; S. Mashiko; M. Uchikoshi and M. Issiki
Proceedings of Int. Conf. Thermoelectrics, Apr. 2008 - Local neutron transmutation doping using isotopically enriched silicon film
Yoichi Yamada; Hiroyuki Yamamoto; Hironori Ohba; Masato Sasase; Fumitaka Esaka; Kenji Yamaguchi; Haruhiko Udono; Shin-Ichi Shamoto; Atsushi Yokoyama; Kilchi Hojou
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, Nov. 2007, [Reviewed] - Polarized optical reflection study on single crystalline beta-FeSi2
Haruhiko Udono; Isao Kikuma; Hiroyuki Tajima; Kenichi Takarabe
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Oct. 2007, [Reviewed] - Growth of beta-FeSi2 thin films on beta-FeSi2 (110) substrates by molecular beam epitaxy
M. Muroga; H. Suzuki; H. Udono; I. Kikuma; A. Zhuravlev; K. Yamaguchib; H. Yamamoto; T. Terai
THIN SOLID FILMS, Aug. 2007, [Reviewed] - Preparation of beta-FeSi2 substrates by molten salt method
M. Okubo; T. Ohishi; A. Mishina; I. Yamauchi; H. Udono; T. Suemasu; T. Matsuyama; H. Tatsuoka
THIN SOLID FILMS, Aug. 2007, [Reviewed] - Melt growth and characterization of Mg2Si bulk crystals
Daiki Tamura; Ryo Nagai; Kazuhiro Sugimoto; Haruhiko Udono; Isao Kikuma; Hiroyuki Tajima; Isao J. Ohsugi
THIN SOLID FILMS, Aug. 2007, [Reviewed] - Single crystalline beta-FeSi2 grown using high-purity FeSi2 source
Kouhei Gotoh; Hirokazu Suzuki; Haruhiko Udono; Isao Kikuma; Fumitaka Esaka; Masahito Uchikoshi; Minoru Isshiki
THIN SOLID FILMS, Aug. 2007, [Reviewed] - Novel photo-sensitive materials for hydrogen generation through photovoltaic electricity
Kenji Yamaguchi; Haruhiko Udono
International Journal of Hydrogen Energy, 03 Jan. 2007, [Reviewed] - Thermoeletric properties of solution grown β-FeSi2 single crystals
Hirokazu Suzuki; Haruhiko Udono; Isao Kikuma
Mater. Trans., 15 Jun. 2006, [Reviewed] - Solution growth of n-type β-FeSi2 single crystals using Ni-doped Zn solvent
H. Udono; Y. Aoki; H. Suzuki; I. Kikuma
J. Crystal Growth, 24 May 2006, [Reviewed] - Effect of thermal annealing on the photoluminescence of β-FeSi2 films on Si substrate
Kenji Yamaguchi; Kenichiro Shimura; Haruhiko Udono; Masato Sasase; Hiroyuki Yamamoto; Shin-ichi Shamoto; Kiichi Hojou
Thin Solid Films, 23 Nov. 2005 - High interband transitions in β-FeSi2 under pressure
Yasunobu SUMIDA; Yoshihisa MORI; Kenichi TAKARABE; Haruhiko UDONO; Isao KIKUMA
Jpn. J. Appl. Phys., 11 Oct. 2005, [Reviewed] - Growth and characterization of Mg2Si bulk crystals
Haruhiko Udono; Ryo Nagai; Daiki Tamura; Isao Kikuma
The 3rd Asian Conference on Crystal Growth and Crystal Technology, Beijin China, Oct. 2005 - Solution growth of N-type β-FeSi2 single crystals using Sn-solvent
Haruhiko Udono; Kazutaka Matsumura; Isao J. Osugi; Isao Kikuma
J. Crystal Growth, 15 Dec. 2004, [Reviewed] - Solution Growth of high quality p-type β-FeSi2 single crystals using Zn solvent
Hauruhiko Udono; Yuta Aoki; Isao Kikuma; Hiroyuki Tajima; Isao J. Ohsugi
J. Crystal Growth, 15 Dec. 2004, [Reviewed] - Structural study of FeSi2 under pressure
K. Takarabe; T. Ikai; Y. Mori; H. Udono; I. Kikuma
J. Appl. Phys., 13 Nov. 2004, [Reviewed] - Anisotropy of refractive indes of β-FeSi2
H. Udono; I. Kikuma; H. Tajima; K. Takarabe
Proc. 1st Inter. Conf. on Group IV Photonics, 29 Sep. 2004, [Reviewed] - Indirect optical absorption of single crystalline β-FeSi2
Haruhiko Udono; Isao Kikuma; Tsuyoshi Okuno; Yasuaki Masumoto; Hiroyuki Tajima
Appl. Phys. Lett., 13 Sep. 2004, [Reviewed] - Indirect optical absorption of single crystalline beta-FeSi2
H. Udono; I. Kikuma; T. Okuno; Y. Masumoto; H. Tajima
Applied Physics Letters, Sep. 2004, [Reviewed] - Optical properties of β-FeSi2 single crystals grown from solutions
H. Udono; I. Kikuma; T. Okuno; Y. Masumoto; H. Tajima; S. Komuro
Thin Solid Films, 29 Aug. 2004, [Reviewed] - Electrical properties of p-type β-FeSi2 single crystals grown from Ga and Zn solvents
H. Udono; I. Kikuma
Thin Solid Films, 29 Aug. 2004, [Reviewed] - Thermal expansion of β-FeSi2 at low temperatures
Y. Terai; H. Ishibashi; Y. Maeda; H. Udono
Thin Solid Films, 29 Aug. 2004, [Reviewed] - Structural and electrical properties of β-FeSi2 single crystals grown using Sb solvent
H. Kannou; Y. Saito; M. Kuramoto; T. Takeyama; T. Nakamura; T. Matsuyama; H. Udono; Y. Maeda; M. Tanaka; Z. Q. Liu; H. Tatsuoka; H. Kuwabara
Thin Solid Films, 29 Aug. 2004, [Reviewed] - Raman spectra for β-FeSi2 bulk crystals
Y. Maeda; H. Udono; Y. Terai
Thin Solid Films, 29 Aug. 2004, [Reviewed] - Reflection and absorption spectra of β-FeSi2 under pressure
Y. Mori; Y. Sumida; K. Takarabe; T. Suemasu; F. Hasegawa; H. Udono; I. Kikuma.
Thin Solid Films, 29 Aug. 2004, [Reviewed] - Thin Solid Films: Preface
Maeda, Y.Y.; Homewood, K.P.; Suemasu, T.; Sadoh, T.; Udono, H.; Kenji, Y.
Thin Solid Films, 2004 - Control of Ga Doping Level in β-FeSi2 using Sn-Ga Solvent
Udono, H.; Matsumura, K.; Ohsugi, I.J.; Kikuma, I.
Mat. Sci. Semicon. Proc., Nov. 2003, [Reviewed] - Etch Pits Observation and Etching Properties of β-FeSi2
Udono, H.; Kikuma, I.
Mat. Sci. Semicon. Proc., Nov. 2003, [Reviewed] - Solution Growth and Optical Characterization of β-FeSi2 Bulk Crystals
H. Udono and I. Kikuma, We have succeeded in growing large-sized β-FeSi2 crystal (10 mm in diameter and 0.3-0.5 mm in thickness) by a temperature gradient solution growth method using a carbon plate. The grown crystals had large-sized grain boundaries with an area of about (1-2)× (1-4) mm2. Optical absorption measurements were performed at room temperature on single crystalline specimens prepared from the grown crystals. The absorption spectra suggest that β-FeSi2 has an indirect band-gap structure with a gap energy of approximately 0.75 eV., The Japan Society of Applied Physics
Jpn. J. Appl. Phys., May 2002, [Reviewed] - Crystal Growth of β-FeSi2 by Temperature Gradient Solution Growth Method using Zn Solvent
H. Udono; S. Takaku and I. Kikuma
J. Crystal Growth, Apr. 2002, [Reviewed] - Growth and Characterization of Br-doped ZnSe Single Crystals Grown by Vertical Sublimation Method
H. Kato; H. Udono and I. Kikuma
J. Crystal Growth, Jul. 2001, [Reviewed] - Observation of Etch Pits of β-FeSi2 Single Crystals
H. Udono and I. Kikuma
Jpn. J. Appl. Phys., Jun. 2001, [Reviewed] - β-FeSi2 Single Crystals Grown from Solution
H. Udono and I. Kikuma
Jpn. J. Appl. Phys., Mar. 2001, [Reviewed] - Effect of solution thickness on ZnSe crystals grown fron Se/Te mixed solutions
H. Kato; H. Udono and I. Kikuma
J. Crystal Growth, Nov. 2000, [Reviewed] - β-FeSi2 Bulk Crystals Grown by the Temperature Gradient Solution Growth Method using Ga Solvent
H. Udono and I. Kikuma
Proc. Japan - UK joint workshop on KANKYO semiconductors, Tsukuba, Aug. 2000, [Invited] - Growth of β-FeSi2 on Si subsrtrate from liquid phase
H. Udono; M. Tada and I. Kikuma
Proc. Japan - UK joint workshop on KANKYO semiconductors, Tsukuba, Aug. 2000 - The effect of (Al, I) impurities and heat treatment on lattice paramaeter of single-crystal
H. Udono; I. Kikuma and Y. Okada
J. Crystal Growth, Jun. 2000, [Reviewed] - Solution Growth of Single-Phase β-FeSi2 Bulk Crystals
H. Udono and I. Kikuma
Jpn. J. Appl. Phys., Mar. 2000 - Dependence of lattice parameter of melt-grown ZnSe on Zn partial pressure during in-situ annealing
H. Udono; I. Kikuma and Y. Okada
J. Crystal Growth, Feb. 1999 - Lattice paramaeter of ZnSe crystals grown from melt under Zn partial pressure
H. Udono; I. Kikuma and Y. Okada
J. Crystal Growth, Sep. 1998, [Reviewed] - Rapid diffusion of V elements during the conversion of GaAs to GaAsP on a GaP substrate
M. Kimura; Z. Qin; S. Dost; H. Udono; A. Tanaka and T. Sukegawa
Appl. Surf. Sci., Apr. 1997, [Reviewed] - Conversion mechanism of GaAs to GaAsP on GaP substrate
M. Kimura; Z. Qin; H. Udono; S. Dost; A. Tanaka and T. Sukegawa
Materials Sci. & Eng. B, Feb. 1997, [Reviewed] - A numerical analysis for the conversion phenomenon of GaAs to GaAsP on GaP substrate in an LPE system
M. Kimura; S. Dost; H. Udono; A. Tanaka; T. Sukegawa and Z. Qin
J. Crystal Growth, Dec. 1996, [Reviewed] - Suppression of twins in GaAs layers grown on a GaP(111)B substrate by liquid phase epitaxy
H. Udono; A. Motogaito; M. Kimura; A. Tanaka and T. Sukegawa
J. Crystal Growth, Nov. 1996, [Reviewed] - Conversion of GaAs Layer Grown on GaP Substrate to GaAsP in LPE System
H. Udono; H. Katsuno; A. Tanaka and T. Sukegawa
Jpn. J. Appl. Phys., Dec. 1993, [Reviewed] - Conversion from GaAs to GaAsP by annealing a GaAs layer on GaP in Ga-As-P solution
T. Sukegawa; H. Udono; M. Kimura; H. Katsuno; A. Tanaka
Jpn. J. Appl. Phys., Aug. 1993, [Reviewed]
MISC
- 〔Major achievements〕Mg2Si基板開発と赤外線センサへの展開
鵜殿 治彦
レーザー研究, 15 Oct. 2022, [Invited] - 〔Major achievements〕マグネシウムシリサイドを用いた環境調和型赤外フォトダイオード
鵜殿 治彦
応用物理, 10 Dec. 2019, [Invited] - 〔Major achievements〕見直され始めたシリサイド系熱電材料
鵜殿治彦
日本熱電学会誌, Mar. 2012, [Invited] - 25aTJ-11 Search for Semiconducting Si clathrate
Imai Motoharu; Sato Akira; Imai Yoji; Udono Haruhiko; Tajima Hiroyuki
Meeting Abstracts of the Physical Society of Japan, 2011 - 資源・環境リスクに対応するシリサイド半導体の育成と物性評価
鵜殿治彦
第28回無機材料に関する最近の研究成果講演予稿集, Jan. 2011, [Invited] - Fluorescence EXAFS study of residual Ga in β-FeSi2 grown from Ga solvent
H Yamada; M Tabuchi; Y Takeda; and H Udono
Journal of Physics: Conference Series, Jun. 2009, [Reviewed] - 〔Major achievements〕Growth and characterization of semiconducting iron disilicide bulk crystals
Haruhiko Udono
OYO BUTSURI, 10 Jul. 2007, [Invited] - 〔Major achievements〕鉄シリサイドバルク成長と特性
鵜殿治彦
機能材料, 05 Sep. 2005, [Invited] - シリサイド半導体の基礎物性
前田佳均; 鵜殿治彦
日本学術振興会未踏・ナノデバイステクノロジー第151委員会，第65回研究会資料, May 2003 - β-FeSi2バルク結晶の光吸収
鵜殿治彦
第3回シリサイド系半導体研究会講演予稿, Mar. 2003 - Electronic structure of β-FeSi_2 under pressure
Takarabe K.; Sumida Y.; Ikai T.; Teranisi R.; Mori Y.; Udono H.; Suemasu T.; Hasegawa F.
Meeting Abstracts of the Physical Society of Japan, 2003 - β-FeSi2の吸収特性
鵜殿治彦
「2002年シリサイド系半導体・夏の学校」研究会資料, JAERI-Conf 2002-014, Aug. 2002 - High-Pressure X-ray diffraction study of β-FeSi_2
Ikai T.; Mori Y.; Tkarabe K.; Sumida N.; Skuramata H.; Udono H.; Kikuma I.
Meeting Abstracts of the Physical Society of Japan, 2002 - 24pSA-5 Pressure Effect of β-FeSi_2
takarabe K.; Mori Y.; Ikai T.; Itokazu T.; Udono H.
Meeting Abstracts of the Physical Society of Japan, 2002
Books and other publications
- 熱電変換材料 実用・活用を目指した設計と開発
Joint work
情報機構, 19 Dec. 2014 - シリサイド系半導体の科学と技術-資源･環境時代の新しい半導体と関連物質-
前田佳均編著, Joint work
裳華房, 25 Sep. 2014 - サーマルマネージメント-余熱・排熱の制御と有効利用- 第4章第1節1.1 シリサイド系熱電材料の開発
鵜殿治彦, Single work
株）エヌ・ティー・エス, 17 Apr. 2013
9784864690607 - Thermoelectrics and its Energy Harvesting,Chap.18 "Preparation and thermoelectric properties of Iron Disilicide "
Y. Isoda and H. Udono, Joint work
CRC Press, 2012
9781439874707
Lectures, oral presentations, etc.
- エピタキシャルMg3Bi2薄膜の大気安定性および熱電性能評価
栗山 武琉; 鮎川 瞭仁; 根城 虹希; 鵜殿 治彦; 坂根 駿也
第72回応用物理学会春期学術講演会, 17 Mar. 2025 - エピタキシャルMg3Sb2/Mg3Bi2薄膜の電気特性と構造評価
根城 虹希; 鮎川 瞭仁; 切通 望; 栗山 武琉; 鵜殿 治彦; 坂根 駿也
第72回応用物理学会春期学術講演会, 16 Mar. 2025 - スパッタリング堆積法によるSi基板上へのInSb薄膜の成長と評価
小金澤 藍登; 久保田 啓聖; 鮎川 瞭仁; 坂根 駿也; 鵜殿 治彦
第72回応用物理学会春期学術講演会, 16 Mar. 2025 - 平底pBN坩堝からブリッジマン成長したMg2Si結晶の結晶成長方位
鉄幸多朗; 島野航輔; 木村侑生; 藤久善司; 坂根駿也; 鵜殿治彦
第72回応用物理学会春期学術講演会, 16 Mar. 2025 - Ag拡散源の膜厚によるMg2Si-PDの受光感度への影響
飯野有紀; 武井日出人; 尾嶋海人; 坂根駿也; 鵜殿治彦
第72回応用物理学会春期学術講演会, 16 Mar. 2025 - Mg3Sb2薄膜への不純物ドーピングに向けたイオン注入法の検討
坂根 駿也; 鮎川 瞭仁; 切通 望; 栗山 武琉; 根城 虹希; 鵜殿 治彦
第72回応用物理学会春期学術講演会, 15 Mar. 2025 - c-Al2O3基板上Mg3Bi2薄膜のエピタキシャル成長及び熱電特性評価
鮎川 瞭仁; 栗山 武流; 根城 虹希; 鵜殿 治彦; 坂根 駿也
第72回応用物理学会春期学術講演会, 15 Mar. 2025 - 短波赤外イメージセンサに向けたMg2Si-PDリニアアレイの試作(II)
古田良輔; 尾嶋海人; 武井日出人; 勝俣響; 坂根駿也; 鵜殿治彦
第72回応用物理学会春期学術講演会, 14 Mar. 2025 - Si(001)基板上に作製したエピタキシャルMg3Sb2薄膜の赤外受光特性
切通 望; 鮎川 瞭仁; 根城 虹希; 栗山 武琉; 山本 若葉; 安原 聡; 佐藤 康平; 鵜殿 治彦; 坂根 駿也
第72回応用物理学会春期学術講演会, 14 Mar. 2025 - Mg2Siのラマンスペクトルと第一原理計算によるフォノンダイナミクス解析
島野航輔; 太田岳宏; 高倉健一郎; 坂根駿也; 鵜殿治彦
第72回応用物理学会春期学術講演会, 14 Mar. 2025 - Fabrication of Mg2Si linear photodiode arrays for SWIR imaging
Haruhiko UDONO; Kaito Ojima; Naoki Imaizumi; Hideto Takei; Shunya Sakane
SPIE Photonics West 2025, 28 Jan. 2025 - エピタキシャル Mg3SbBi 薄膜における電気特性の温度依存性
根城 虹希; 栗山 武琉; 鮎川 瞭仁; 切通 望; 鵜殿 治彦; 坂根 駿也
令和6年度 電気学会東京支部茨城支所研究発表会, 30 Nov. 2024 - シリコン基板上の InSb のスパッタ成膜
小金澤藍登; 久保田啓聖; 鮎川瞭仁; 坂根駿也; 鵜殿治彦
令和6年度 電気学会東京支部茨城支所研究発表会, 30 Nov. 2024 - c-Al2O3 基板上エピタキシャル Mg3Bi2 薄膜の大気安定性の向上
栗山武琉; 鮎川瞭仁; 鵜殿治彦; 坂根駿也
令和6年度 電気学会東京支部茨城支所研究発表会, 30 Nov. 2024 - 平坦坩堝からブリッジマン成長した Mg2Si結晶の成長方位と結晶性評価
鉄幸多朗; 島野航輔; 藤久善司; 木村侑生; 鵜殿治彦; 坂根駿也
令和6年度 電気学会東京支部茨城支所研究発表会, 30 Nov. 2024 - 低温・バイアス下におけるマグネシウムシリサイドフォトダイオードの分光感度
古田良輔; 勝俣響; 坂根駿也; 鵜殿治彦
令和6年度 電気学会東京支部茨城支所研究発表会, 30 Nov. 2024 - 微細加工によるマグネシウムシリサイドフォトダイオードのAg 拡散条件と分光感度
勝俣響; 古田良輔; 尾嶋海人; 武井日出人; 坂根駿也; 鵜殿治彦
令和6年度 電気学会東京支部茨城支所研究発表会, 30 Nov. 2024 - Epitaxial Growth of High-quality Mg3Sb2-based Thin Films and Their Thermoelectric Properties
Akito Ayukawa; Nozomu Kiridoshi; Takeru Kuriyama; Wakaba Yamamoto; Akira Yasuhara; Haruhiko Udono; Shunya Sakane
The 21st International Conference on Flow Dynamics, 18 Nov. 2024 - Sc 添加したMg3(Sb,Bi)2結晶合成と熱電特性評価
小金澤直; 鮎川瞭仁; 坂根駿也; 鵜殿治彦
第 21 回日本熱電学会学術講演会, 25 Sep. 2024 - c-Al2O3 基板上へのエピタキシャル Mg3Bi2 薄膜の作製条件探索及び熱電特性評価
鮎川 瞭仁; 栗山 武流; 鵜殿 治彦; 坂根 駿也
第 21 回日本熱電学会学術講演会, 24 Sep. 2024 - 同時蒸着によるSi(001)基板上エピタキシャルMg3Sb2薄膜の作製
切通 望; 鮎川 瞭仁; 山本 若葉; 安原 聡; 佐藤 康平; 鵜殿 治彦; 坂根 駿也
第85回応用物理学会秋季学術講演会, 18 Sep. 2024 - c-Al2O3基板上エピタキシャルMg3Bi2薄膜の成長条件の探索
鮎川 瞭仁; 栗山 武流; 鵜殿 治彦; 坂根 駿也
第85回応用物理学会秋季学術講演会, 18 Sep. 2024 - 歪み緩和したエピタキシャルMg3Sb2薄膜の熱電特性
坂根 駿也; 鮎川 瞭仁; 切通 望; 山本 若葉; 安原 聡; 山下 雄一郎; 鵜殿 治彦
第85回応用物理学会秋季学術講演会, 17 Sep. 2024, [Invited] - 不純物ドープしたMg2Si単結晶のラマン分光測定
島野航輔; 鵜殿治彦; 坂根駿也
第85回応用物理学会秋季学術講演会, 17 Sep. 2024 - Mg2Si単結晶成長に及ぼす坩堝形状の影響
朝倉康太; 劉鑫; 鵜殿治彦; 宇佐美徳隆
第85回応用物理学会秋季学術講演会, 17 Sep. 2024 - Mg2Si-PDアレイの窒化シリコン絶縁膜の暗電流への影響
武井日出人; 尾嶋海人; 坂根駿也; 鵜殿治彦
第85回応用物理学会秋季学術講演会, 17 Sep. 2024 - 短波赤外イメージセンサに向けたMg2Si-PDリニアアレイの試作
今泉尚己; 尾嶋海人; 武井日出人; 坂根駿也; 鵜殿治彦
第85回応用物理学会秋季学術講演会, 17 Sep. 2024 - n型基板上に熱拡散で作製したMg2Si-TPVセルの出力特性への基板キャリア濃度の影響
清水匠; 島野航輔; 坂根駿也; 鵜殿治彦
第85回応用物理学会秋季学術講演会, 16 Sep. 2024 - φ50mmサイズMg2Si結晶の単結晶化機構の調査
藤久善司; 木村侑生; 島野航輔; 坂根駿也; 劉鑫; 宇佐美徳隆; 鵜殿治彦
第85回応用物理学会秋季学術講演会, 16 Sep. 2024 - Epitaxial Growth of Zintl Phase Mg3Sb2 Thin Films on Si (001) Substrate by Simultaneous Deposition
Nozomu Kiridoshi; Akito Ayukawa; Haruhiko Udono; Shunya Sakane
ICMBE 2024, 12 Sep. 2024 - High-quality Mg3Sb2 Epitaxial Thin Films with Few Defects Grown Directly on c-plane Al2O3 Substrates
Akito Ayukawa; Nozomu Kiridoshi; Wakaba Yamamoto; Haruhiko Udono; Shunya Sakane
ICMBE 2024, 12 Sep. 2024 - Evaluation of Mg2Si-TPV cells fabricated on n-Mg2Si substrate by thermal diffusion of Ag acceptor
Takumi Shimizu; Daisuke Miyago; Syunya Sakane; Haruhiko Udono
International Conference on Solid State Devices and Materials (SSDM2024), 03 Sep. 2024 - 熱電材料の基礎とシリサイド系半導体の応用例
鵜殿治彦
2024年度シリサイド夏の学校, 21 Jul. 2024, [Invited] - 熱処理した c 面 Al2O3 基板上への高品質 Mg3Sb2 薄膜のエピタキシャル成長とその熱電特性
鮎川瞭仁; 切通望; 山本若葉; 坂根駿也; 鵜殿治彦
2024年度シリサイド夏の学校, 20 Jul. 2024 - 熱拡散法により作製された Mg2Si-TPV セルの性能評価
清水匠; 宮後大介; 坂根駿也; 鵜殿治彦
2024年度シリサイド夏の学校, 20 Jul. 2024 - ラマン分光による Mg2Si 基板上 Ag 薄膜の熱処理に反応の評価
武井日出人; 尾嶋海人; 久保田啓聖; 坂根駿也; 鵜殿治彦
2024年度シリサイド夏の学校, 20 Jul. 2024 - p 型 Mg2Si 単結晶の不純物と電気的特性
藤久善司; 木村侑生; 島野航輔; 坂根駿也; 鵜殿治彦
2024年度シリサイド夏の学校, 20 Jul. 2024 - 熱拡散でMg2Si 基板上に作製したpn接合ダイオードの暗電流への基板中のキャリア濃度の影響
島野航輔; 植松達哉; 坂根駿也; 鵜殿治彦
2024年度シリサイド夏の学校, 20 Jul. 2024 - Thermoelectric performance of epitaxially grown Mg3Sb2 thin films on sapphire substrates
Shunya Sakane; Akito Ayukawa; Nozomu Kiridoshi; Yuichiro Yamashita; Haruhiko Udono
The 40th International Conference on Thermoelectrics (ICT2024), 04 Jul. 2024 - 基板表面の原子配列制御による高品質エピタキシャル Mg3Sb2 薄膜の作製
鮎川瞭仁; 切通望; 山本若葉; 坂根駿也; 鵜殿治彦
ナノ学会第 22 回大会, 23 May 2024 - Development of single crystalline Mg2Si substrate for Mg2Si SWIR sensor
Haruhiko UDONO
7 th International Conference on Nanoscience and Nanotechnology (ICONN-2023), 29 Mar. 2023, [Invited]
20230327, 20230329 - 4探針プローブ法によるMg2Si基板へのAl拡散深さの調査
尾嶋海人; 中村陸斗; 鵜殿治彦
第70回応用物理学会春期学術講演会, 16 Mar. 2023
20230315, 20230318
Affiliated academic society
Industrial Property Rights
- 特許第5660528号, 特開2011-210845, 特願2010-075467, GaあるいはSnでドーピングされたバルク状マンガンシリサイド単結晶体あるいは多結晶体およびその製造方法
鵜殿 治彦 - 特開2008-303078, 特願2007-149102, シリコン薄膜または同位体濃縮シリコン薄膜の製造方法
山田 洋一, 山本 博之, 大場 弘則, 江坂 文孝, 山口 憲司, 社本 真一, 横山 淳, 北條 喜一, 笹瀬 雅人, 鵜殿 治彦 - 特許第3912959号, 特開2002-003300, 特願2000-182138, β-FeSi2結晶の製造方法および製造装置
鵜殿 治彦, 菊間 勲 - 特許第3891722号, 特開2000-247624, 特願平11-043955, 鉄シリサイド結晶の製造方法
鵜殿 治彦 - 特開2002-003300, 特願2000-182138, β-FeSi2結晶の製造方法および製造装置
鵜殿 治彦, 菊間 勲
