Naoyuki SATOAssociate Professor
■Researcher basic information
Organization
- College of Engineering Department of Electrical and Electronic Systems Engineering
- Graduate School of Science and Engineering(Master's Program) Major in Quantum Bean Science
- Graduate School of Science and Engineerin(Doctoral Program) Major in Quantum Bean Science
- Faculty of Applied Science and Engineering Domain of Electrical and Electronic Systyems Engineering
Educational Background
Member History
■Research activity information
Paper
- 亜鉛-酸素混合プラズマを用いた高機能ZnO透明導電膜の低抵抗化プロセス
佐藤直幸; 野中翔太; 竹田直樹; 池畑 隆; 佐藤達志, 電気学会
平成27年電気学会基礎・材料・共通部門大会資料, 2015 - マルチプラズマイオンプレーティングに向けたデュアルZnO透明導電膜合成装置の開発
佐藤直幸; 大木 浩; 根矢和次; 佐藤達志, 電気学会
電気学会プラズマ研究会資料, 2014 - 高機能ZnO透明導電膜のシート抵抗低減に向けた亜鉛-酸素混合プラズマの高密度化
佐藤 直幸; 吉崎 正洋; 池畑 隆
電気学会研究会資料. PST, プラズマ研究会, 10 Dec. 2012, [Reviewed] - Process condition dependence of PV cell properties by ECR oxygen plasma fabrication of cell based on Cu2O
電気学会プラズマ研究会資料, 15 Dec. 2011 - Plasma synthesis of ZnO transparent conductive film for multi-junction solar cells
38th EPS Conference on Plasma Physics (2011), 28 Jun. 2011 - Full spectrum ZnO transparent conductive film synthesized in low pressure rf plasma for multi-junction solar cell
SATO Naoyuki; YOSHIDA Yoshinori; YANAGISAWA Shinya; KISHIDA Tomokazu; IKEHATA Takashi
電気学会プラズマ研究会資料, 14 Mar. 2011 - Dependences of ZnO transparent conductive film on plasma parameter in the ICP synthesis
YOSHIDA Yoshinori; TSUCHIKAWA Hiroaki; SATO Naoyuki; IKEHATA Takashi
電気学会プラズマ研究会資料, 16 Dec. 2010 - Generation of photovoltage for CuxO/ZnO heterojunction by employing ECR remote plasma
Yuta Kitsukawa,Naoyuki Sato and Takashi Ikehata, We have examined the generation of photovoltage for CuxO/ZnO heterojunction which is formed by combining ZnO transparent conductive film on the conventional copper plate oxidized in our unique low-pressure plasma. The open circuit voltage and the short circuit current density are 40 mV and 2.5 A/cm2 without the texture effect of the contact layer, respectively. These values are strongly dependent on the sheet resistance of ZnO transparent conductive film synthesized in the Zn-O2 mixture plasma whose ion energy can be lowered until 7 eV oriented for the damage-free plasma processing.
The papers of Technical Meeting on Plasma Science and Technology, IEE Japan, 14 Nov. 2009 - Reducing the resistance of ZnO transparent conductive film synthesized in ICP
Yoshinori Yoshida,Naoyuki Sato and Takashi Ikehata, We have investigated that the resistivity as well as the sheet resistance of ZnO transparent conductive film decreases with keeping the transparency when the hydrogen gas is introduced to the Zn-O2 mixture plasma during a deposition. The result seems to be attributed to the substitution of hydrogen atoms highly excited in ICP for oxide defects in ZnO film and consequently to the increase of mobility due to the reduction of Zn-Zn distance. The decrease of film thickness by introducing the hydrogen gas which is found from the wavelength dependencies of the visible light transmittance may support our consideration.
The papers of Technical Meeting on Plasma Science and Technology, IEE Japan, 14 Nov. 2009 - Investigation of zinc vapor in the inductively coupled oxygen plasma for low-resistivity ZnO transparent conductive film
Naoyuki Sato; Kouhei Uto; Yoshinori Yoshida; Takashi Ikehata, ZnO transparent conductive film is synthesized on the unheated pylex glass by vaporizing zinc into the inductively coupled oxygen plasma under the condition of relatively low pressure and undope. The resistivity of which is decreased until a few factor of 10-3 cm with an average light transmittance more than 90 % in the visible range. The result is attributed to employing the 3-D movable zinc source. Our method is effective for obtaining the relationships between resistivity and plasma parameters such as plasma density, electron temperature, and space potential since the amount of zinc incident upon the substrate is controlled with high accuracy by changing the zinc source-to-substrate distance under keeping zinc vaporization quite stable.
The papers of Technical Meeting on Plasma Science and Technology, IEE Japan, 20 Dec. 2008
Lectures, oral presentations, etc.
- ECR プラズマ作製 Cu/Cu2O-PV の特性計測手法の改良 IBK-22-091
五町晃一,佐藤直幸
令和4年度(第30回)電気学会東京支部茨城支所研究発表会, 17 Dec. 2022
20221217 - 低抵抗ZnO透明導電膜向けZn-O2混合プラズマ中のZnO分子のOES観察
23 Mar. 2022
20220323 - ECR プラズマ作製 Cu/Cu2O-PV セルの起電力計測システムの改善
06 Feb. 2022 - VHF帯CH4プラズマを用いた真鍮上炭素系膜の剥離に与える膜厚の影響
21 May 2021 - Zn-O2混合プラズマによるZnO透明導電膜の高速低温合成
20 Oct. 2020, [Invited]
20201020 - マルチプラズマイオンプレーティングに向けたデュアルZnO透明導電膜合成装置の開発
佐藤直幸; 大木 浩; 根矢和次; 佐藤達志
電気学会プラズマ研究会, 2014, 電気学会
Research Themes
- 吸引プラズマの研究
May 2022 - Feb. 2023 - Study on a real-time monitoring technique of electromagnetic discharge in a plasma chamber
Grant-in-Aid for Scientific Research (C)
Ibaraki University
2006 - 2008 - Development of a compact and low energy C_<60> cluster ion gun for high resolution depth profiling ob bio-samples
Grant-in-Aid for Scientific Research (C)
Setsunan University
2005 - 2006 - Development of plasma synthesis technology for advanced complex compound materials based on mass-selective momentum control
Grant-in-Aid for Scientific Research (B)
Ibaraki University
2004 - 2006 - Formation of durable fullerene films by using the specially controlled plasma
Grant-in-Aid for Scientific Research (C)
IBARAKI UNIVERSITY
1998 - 1999 - DEVELOPMENT OF CENTRIFUGAL SEPARATION METHOD OF ISOTOPES BY USE OF A J*B DRIVEN ROTATING PLASMA
Grant-in-Aid for Developmental Scientific Research (B)
IBARAKI UNIVERSITY
1993 - 1995
Industrial Property Rights
- 6656937, 太陽電池の製造方法
佐藤直幸,池畑 隆 - 特許第5507882号, 特願2009-113721, 酸化亜鉛透明導電膜の製造方法及びこの方法を実施するための製造装置
佐藤直幸,池畑 隆 - 4963360, 携帯型大気圧プラズマ発生装置
佐藤直幸,池畑 隆 - JPB_0004346417, 超微細パターン凹構造の形成方法
- 4287724, プラズマ電位測定方法及び装置JPB_0004287724
- JPB_0004289967, プラズマ電位測定用プローブ
- 特許第3377784号, 特願2002-158209, 特願2000-350409, The method and apparatus of charged particle control
Naoyuki Sato,Takashi Ikehata