Hisashi SHIMAKAGEProfessor

■Researcher basic information

Organization

  • College of Engineering Department of Electrical and Electronic Systems Engineering
  • Graduate School of Science and Engineering(Master's Program) Major in Electrical and Electronic Systems Engineering
  • Graduate School of Science and Engineerin(Doctoral Program) Major in Complex Systems Science
  • Faculty of Applied Science and Engineering Domain of Electrical and Electronic Systyems Engineering

Research Areas

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment, Electronic Device/Electronic Equipment

Research Keyword

  • Superconducting electronics, Thin films, Josephson devices

Degree

  • 2005年03月 博士(工学)(大阪大学)

Career

  • Apr. 2010, 茨城大学工学部 工学部 電気電子工学科 教授
  • Aug. 2009 - Mar. 2010, 情報通信研究機構 総合企画部 企画戦略室 プラニングマネージャー
  • Jan. 1997 - Jul. 2009, 情報通信研究機構 ナノICTグループ 主任研究員
  • Oct. 1998 - Sep. 2000, 米国National Institute of Standards and Technology 客員研究員
  • Apr. 1988 - Dec. 1996, 郵政省 通信総合研究所 超伝導研究室 研究員

■Research activity information

Paper

  • Study on Mid-Infrared Photon Detector Using Hot Electron Bolometer With Phased Array Antenna
    Akira Kawakami; Hisashi Shimakage; Junsei Horikawa; Shingo Saito; Norihiko Sekine; Shukichi Tanaka, Institute of Electrical and Electronics Engineers (IEEE)
    IEEE Transactions on Applied Superconductivity, Aug. 2025, [Reviewed]
  • Examination of Mid-Infrared Photon Detection by Hot Electron Bolometer With Twin Slot Antenna
    Akira Kawakami; Junsei Horikawa; Hisashi Shimakage; Shingo Saito; Shukichi Tanaka, IEEE Transactions on Applied Superconductivity
    IEEE Transactions on Applied Superconductivity, 28 Feb. 2023, [Reviewed]
  • Measurements of phase shifts in YBCO transmission lines for evaluation of kinetic inductance change               
    石田亮; 後藤隆志; 島影尚; 武田正典, Corresponding
    J. of Phys.: Conf. Ser., Jun. 2019, [Reviewed]
  • Evaluation of Mid Infrared Superconducting Hot Electron Bolometer Mixer               
    川上彰; 堀川隼世; 島影尚; 田中秀吉; 鵜澤佳徳, Last
    J. Jpn. Soc. Infrared Science & Technology, Feb. 2019, [Reviewed]
  • Study of an antenna characterization for mid-infrared detector on the basis of the metal property
    堀川隼世; 川上彰; 兵頭政春; 島影尚, Last, 日本赤外線学会
    J. Jpn. Soc. Infrared Science & Technology, Aug. 2017, [Reviewed]
  • Calculations of superconducting parametric amplifiers performances               
    後藤隆志; 武田正典; 齋藤伸吾; 島影尚, Corresponding
    J. of Phys.: Conf. Ser., Jun. 2017, [Reviewed]
  • Calculations of superconducting parametric amplifiers performances               
    後藤隆志; 武田正典; 齋藤伸吾; 島影尚, Corresponding
    J. of Phys.: Conf. Ser., 01 Jun. 2017, [Reviewed]
  • Evaluation of detectable angle of mid-infrared slot antennas               
    小原亮輔; 堀川隼世; 島影尚; 川上彰, Corresponding
    J. of Phys.: Conf. Ser., Jun. 2017, [Reviewed]
  • Simulations of chaos generation from Josephson junctions with various junction parameters               
    日渡亮; 田村幸英; 島影尚, Corresponding
    J. of Phys.: Conf. Ser., Jun. 2017, [Reviewed]
  • Design and Fabrication for the Construction of MIR HEB Mixers               
    A. Kawakami; H. Shimakage; J. Horikawa; M. Hyodo; S. Saito; S. Tanaka; Y. Uzawa, Last
    IEEE Transactions on Applied Superconductivity, Feb. 2017, [Reviewed]
  • Study of mid infrared hot electron bolometer mixers
    A. Kawakami; H. Shimakage; J. Horikawa; M. Hyodo; S. Saito; S. Tanaka; Y. Uzawa, © 2017 Association for Computing Machinery Inc. All rights reserved. To design antennas for mid-infrared (MIR) hot electron bolometers (HEBs), the surface impedance of Au thin films at cryogenic temperatures was evaluated using Fourier transform infrared spectroscopy (FTIR) with a sample cooling system. For the evaluation, resonator arrays that were constructed by gold (Au) thin film strips were fabricated and the corrected surface reactance was estimated. MIR HEBs with a twin-slot antenna for operation at 61 THz were designed and fabricated using the corrected surface impedance. For evaluating the mixer properties of the MIR HEBs, measurement setup without beam splitter was constructed. In this setup, IF output power characteristics of the MIR HEB mixer was observed. But the obvious difference of the IF output power between 1000 K and 30 K thermal loads have not been confirmed.
    ISSTT 2017 - 28th International Symposium on Space Terahertz Technology, 2017, [Reviewed]
  • Fast response of superconducting hot-electron bolometers with a twin-slot nano-antenna for mid-infrared operation
    Akira Kawakami; Hisashi Shimakage; Junsei Horikawa; Masaharu Hyodo; Shingo Saito; Shukichi Tanaka; and Yoshinori Uzawa, Last, In this study, the use of nano-antennas to improve the response performance of infrared detectors is proposed, and the design and fabrication of antennas that operate in the infrared range is demonstrated. Prototypes of a mid-infrared superconducting hot-electron bolometer (HEB) formed by a twin-slot antenna with a niobium nitride strip were fabricated. When the bolometer was irradiated with mid-infrared (lambda = 4.89 mu m) pulsed light, responses with clear polarization dependency were observed. When the HEB was biased close to the critical current under mid-infrared pulsed light irradiation, the detector output synchronized with the trigger signal was observed. The output waveforms comprised voltage pulse trains, and the full width at half maximum of the pulse was evaluated to be approximately 0.3 ns. (C) 2016 Author(s)., AMER INST PHYSICS
    AIP Advances 6, 125120 (2016);, Dec. 2016, [Reviewed]
  • Response properties of superconducting mid-infrared detectors with a nano-antenna
    Akira Kawakami; Hisashi Shimakage; Junsei Horikawa; Masaharu Hyodo; Shingo Saito; Shunkichi Tanaka; Yoshinori Uzawa, © 2016 IEEE. We have proposed using nano-antennas to improve the response performance of infrared detectors. Prototypes of mid-infrared superconducting hot electron bolometer formed by a twin-slot-antenna with an NbN strip were fabricated. By the irradiation of mid-infrared (λ=4.89 μm) pulsed light, clear polarization dependency of responses was observed. When the HEB was biased close to the critical current, the detector output synchronized with the trigger signal was observed. The output waveforms were composed of voltage pulse trains, and the half width of the pulse was evaluated about 0.3 nsec.
    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 28 Nov. 2016
  • 進行波型カイネティックインダクタンス増幅器開発に向けた 超伝導材料の検討
    武田正典; 小嶋崇文; 牧瀬圭正; 齊藤敦; 齋藤伸吾; 島影尚, Last, 日本赤外線学会
    日本赤外線学会誌, Feb. 2015
  • Fabrication of Superconducting Mid-Infrared Photodetectors With Dipole Nanoantennas               
    A. Kawakami; J. Horikawa; M. Hyodo; S. Tanaka; M. Takeda; H. Shimakage, Last
    IEEE Transactions on Applied Superconductivity, Feb. 2015, [Reviewed]
  • Study of Midinfrared Superconducting Detector With Phased-Array Nanoslot Antenna               
    J. Horikawa; A. Kawakami; M. Hyodo; S. Tanaka; M. Takeda; H. Shimakage, Last
    IEEE Transactions on Applied Superconductivity, Feb. 2015, [Reviewed]
  • Chaotic Oscillations in Josephson Junctions for Random Number Generation               
    H. Shimakage; M. Tamura, Lead
    IEEE Transactions on Applied Superconductivity, Feb. 2015, [Reviewed]
  • Evaluation of nano-slot antenna for mid-infrared detectors
    Junsei Horikawa; Akira Kawakami; Masaharu Hyodo; Shukichi Tanaka; Masanori Takeda; Hisashi Shimakage, To improve the response performance of superconducting infrared detectors, we propose using a photonic antenna with a micro-detector in conjunction with a nano-structure. In this paper, we report evaluation results that show the basic characteristics of a photonic antenna in the mid-infrared region. The antenna consists of a nano-slot antenna and a thin-film load resistance placed in the center of the antenna. The antennas were designed for operation at approximately several tens of THz by using an electromagnetic simulator. Through measurements of the spectral reflectance characteristics, clear absorptions caused by the antenna properties were observed at approximately 50 THz, and high polarization dependencies were also observed. The results of the simulation qualitatively agreed with the results of the experiment. The effective area of the antenna was also evaluated and was found to be approximately 3.5 mu m(2) at 54 THz. (C) 2014 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    INFRARED PHYSICS & TECHNOLOGY, Nov. 2014, [Reviewed]
  • Lyapunov exponent analyses of chaotic oscillations in rf-biased Josephson junctions
    Y. Tamura; H. Shimakage, We have been studying chaos in Josephson junctions for the purpose of applying it to physical random number generators. In this paper, parameter maps, under which chaotic oscillation occurred, were evaluated with RCSJ simulations. Lyapunov exponents were calculated to judge whether their dynamics were chaotic or not. The mapping of chaos occurrence with different system parameters were reported by calculating the exponent for each system parameters. The conditions to generate chaos in Josephson junction toward the random number generator were discussed. (C) 2014 The Authors. Published by Elsevier B.V., ELSEVIER SCIENCE BV
    PROCEEDINGS OF THE 26TH INTERNATIONAL SYMPOSIUM ON SUPERCONDUCTIVITY (ISS 2013), 2014, [Reviewed]
  • Evaluation of nano slot antenna for Mid-infrared detectors
    J. Horikawa; A. Kawakami; M. Hyodo; S. Tanaka; and H. Shimakage, Last, To improve the response performance of superconducting infrared detectors, we propose an nano slot antenna with a NbN load element. Results of simulation and experiment were showed qualitative agreement., IEEE
    2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), Jul. 2013, [Reviewed]
  • Characteristics of MOD Bi-2212 Thin Films on r-Cut Sapphire With CeO2 Buffer Layer
    S. Suzuki; H. Shimakage; A. Kawakami; A. Saito; M. Takeda, We have studied Bi2Sr2CaCu2O8+delta (Bi-2212) thin films fabrication by a metal organic decomposition method. When the Bi-2212 thin films were prepared on c-cut sapphire substrates, the maximum critical temperature (T-C) was 25 K by 820 degrees C air annealing in an electric furnace for 30 min. When the Bi-2212 thin films were prepared on r-cut sapphire substrates with CeO2 buffer layer, the Bi-2212 thin films were grown epitaxially on the CeO2 buffer layer. The maximum T-C obtained in the Bi-2212/CeO2/r-cut sapphire was 62.5 K by 840 degrees C air annealing in an electric furnace for 30 min. To improve the surface morphology, face-to-face annealing process was introduced for the Bi-2212/CeO2/r-cut sapphire. By face-to-face annealing, T-C was increased up to 65 K, and the critical current density of 1.03 x 10(5) A/cm(2) was obtained at 5 K., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, Jun. 2013, [Reviewed]
  • Observation of meander pattern in signals from superconducting MgB2 detector by scanning pulsed laser imaging
    Takekazu Ishida; Ikutaro Yagi; Naohito Yoshioka; Ho Thanh Huy; Tsutomu Yotsuya; Hisashi Shimakage; Shigehito Miki; Zhen Wang, Superconducting MgB2 meander detector has been imaged by scanning a spot of 1.5-mu m focused pulsed laser. The superconducting detector using high-quality B-10-enriched MgB2 thin films at higher operating temperatures has been fabricated to utilize a resistance change induced by the nuclear energy of B-10 and neutron. The MgB2 detector consists of a 200-nm-thick MgB2 thin-film meander line, a 300-nm-thick SiO protective layer, and 150-nm-thick Nb electrodes with 1-mu m MgB2 wires. The devices were placed in a 4 K refrigerator to control at a certain temperature below T-c. A scanning laser spot can be used by the combination of the XYZ piezo-drive stage and an optical fibre with an aspheric focused lens. The measurement system is fully controlled by LabVIEW based software. We succeeded in observing a line-and-space image of a meandering pattern by analysing response signals. (C) 2012 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, Jan. 2013, [Reviewed]
  • Fabrication of superconducting nanowires using MgB2 thin films
    Hisashi Shimakage; Zhen Wang, In this paper, we report on the fabrication and characterization of MgB2 ultrathin films, which would be useful for hot electron bolometer mixers and superconducting single photon detectors. MgB2 thin films were fabricated using a carousel sputtering system in which 6-nm-thick MgB2 thin films showed a critical temperature of 7 K. We succeeded in fabricating hot electron detectors
    these showed a high current density of 7.7 \\times 10-6A/cm2 at 4.2 K in the 400-nm bridge with an MgB2 thickness of 30 nm. Furthermore, we succeeded in fabricating detectors with a 250-nm-wide meander line, 10 nm thickness, and critical temperature of 12 K. These results indicate that the fabrication process for these devices is a promising technique for future experiments. © 2002-2011 IEEE.
    IEEE Transactions on Applied Superconductivity, 2013, [Reviewed]
  • Annealing conditions of Bi2Sr2CaCu2O8+x/CeO2/r-plane sapphire by MOD method
    S. Suzuki; H. Shimakage; A. Kawakami; A. Saito; M. Takeda, We have been studying Bi2Sr2CaCu2O8+x (Bi-2212) thin films on CeO2 buffered r-plane sapphire substrates by a metal organic decomposition (MOD) method. The deposited Bi-2212 thin films showed the c-axis oriented, and the in-plane orientation of the films showed 4-fold symmetry. However, we had a problem that Bi-2212 thin films were dissipation by thermal decomposition when the thin films were annealed above 840 degrees C in air atmosphere. In this study, we investigate the annealing conditions of Bi-2212 thin films. We found TC of Bi-2212 thin films were dependence on the annealing condition such as a gas atmosphere and annealing times. The TC of Bi-2212 thin film annealed at 840 degrees C for 60 min in nitrogen atmosphere was 68.5 K. On the other hand, in oxygen atmosphere, TC was 65 K at the same annealing condition. (C) 2013 The Authors. Published by Elsevier B.V., ELSEVIER SCIENCE BV
    PROCEEDINGS OF THE 25TH INTERNATIONAL SYMPOSIUM ON SUPERCONDUCTIVITY (ISS2012), 2013, [Reviewed]
  • Position Dependent Response of Superconducting MgB2,Neutron Detectors Studied by Pulsed Laser Irradiation
    T. Ishida; I. Yagi; N. Yoshioka; H. T. Hoy T. Yotsuya; K. Satoh; M. Uno; H. Shimakage; S. Miki; Z. Wang; M. Kato; M. Machida; K. Hojou, Last, The MgB2 detector consists of 200 nm thick MgB2 thin film meander structure of 3 mu m line width protected by 300 nm thick SiO layer. The electrical connections were provided by 150 nm thick Nb. The devices were placed in a 4 K refrigerator to investigate the behavior at temperatures below T (c). The position-dependent response of the MgB2 detector can be investigated by scanning a laser spot with the aid of the XYZ piezo-driven stage and an optical fiber with a focusing lens. We found that the inhomogeneity in a detector is very critical to specify the detection efficiency since the detector has the sensitivity only in a narrow temperature regime near T (c)., SPRINGER/PLENUM PUBLISHERS
    Journal of Low Temperature Physics, 2012, [Reviewed]
  • Characterization of Bi2Sr2CaCu2O8+d Stacks Fabricated by Acid Treatment Process
    T. Kato; J. Chen; S. Sunaga; H. Mizumaru; T. Asano; H. Shimakage; K. Yasui; and K. Hamasaki, Last, Bi2Sr2CaCu2O8+delta (Bi-2212) stacks of intrinsic Josephson junctions were fabricated by an acid-treatment process from inside a single crystal. The surrounding acid-treated product is a transparent material, BiOCl. During the process, an optical adhesive (NOA-61) was used to fix a piece of the crystal on a glass substrate and to coat the surface of the sample. The current-voltage characteristics of the stacks at T = 77 K exhibited large hystereses and multiple branches with voltage spacings of approximately 2-3 mV. Under an external microwave field in the frequency range of 2-18 GHz, clear Shapiro steps were observed at voltages with multiples of (h/2e) f(rf). In addition, the thermal cycling properties of the critical current (I-c) were investigated. No apparent degradation of the I-c was observed during repeated thermal cycling between 300 and 77 K., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE Transactions on Applied Superconductivity, Jun. 2011, [Reviewed]
  • Scanning laser microscopy of an MgB2 superconducting sensor
    K. Arai; Y. Akita; I. Yagi; T. Yotsuya; H. Shimakage; S. Miki; Z. Wang; K. Satoh; M. Uno; T. Ishida, Last, The MgB2 detector consists of a 200-nm-thick MgB2 thin-film meander line, a 300-nm-thick SiO protective layer, and 150-nm-thick Nb electrodes. We prepared a straight MgB2 stripline of width 3 mu m and length 100 mu m. To understand the position-dependent sensitivity of the MgB2 detector, a scanning pulsed laser spot can be achieved by the combination of the XYZ piezo-drive stages and an optical fiber with an aspheric focusing lens. The observed scanning XY image indicates that the improvement in sensor homogeneity is very important to improve the sensitivity of the MgB2 sensor as a neutron detector. (C) 2010 Published by Elsevier B.V., ELSEVIER SCIENCE BV
    Physica C, Dec. 2010, [Reviewed]
  • Scanning laser microscope for imaging nanostructured superconductors
    T.Ishida; K.Arai; Y.Akita; M.Miyanari; Y.Minami; T.Yotusya; M.Kato; K.Satoh; M.Uno; H.Shimakage; S.Miki and Z.Wang, Last, The nanofabrication of superconductors yields various interesting features in superconducting properties. A variety of different imaging techniques have been developed for probing the local superconducting profiles. A scanning pulsed laser microscope has been developed by the combination of the XYZ piezo-driven stages and an optical fiber with an aspheric focusing lens. The scanning laser microscope is used to understand the position-dependent properties of a superconducting MgB(2) stripline of length 100 mu m and width of 3 mu m under constant bias current. Our results show that the superconducting stripline can clearly be seen in the contour image of the scanning laser microscope on the signal voltage. It is suggested from the observed image that the inhomogeneity is relevant in specifying the operating conditions such as detection efficiency of the sensor. (C) 2010 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, Oct. 2010, [Reviewed]
  • Scanning pulsed laser imaging of current-biased MgB 2 Detector
    Takekazu Ishida; Kohei Arai; Yukio Akita; Ikutaro Yagi; Tsutomu Yotsuya; Kazuo Satoh; Mayumi Uno; Hisashi Shimakage; Shigehito Miki; Zhen Wang; Masaru Kato; Masahiko Machida; Kiichi Hojo, A superconducting MgB 2 meander detector on a sapphire plate has been proved to work as a neutron detector in our preceding works. The 10B-enriched MgB 2 detector utilizes a voltage change induced by a hot-spot arising from the nuclear reaction energy. To understand the position-dependent sensitivity of a 3-μm MgB 2 stripline of length 100 μm, a scanning laser spot can be achieved by the combination of the XYZ piezo-driven stages and an optical fiber with an aspheric focusing lens. Our results show that the MgB 2 superconducting stripline can be seen in the image of the scanning laser microscope of the signal voltage. © 2009 American Institute of Physics.
    AIP Conference Proceedings, 01 Dec. 2009
  • Development of broadband and rapid THz-TDS system and its application to measurement of superconducting thin films               
    H. Shimosato; M. Ashida; I. Katayama; S. Saito; H. Shimakage; Z. Wang; K. Sakai
    Nov. 2009, [Reviewed]
  • Measurement of superconducting MgB2 thin films by broadband THz time domain spectroscopy II               
    H. Shimosato; I. Katayama; S. Saito; H. Shimakage; Z. Wang; M. Ashida; K. Sakai
    Sep. 2009
  • Fabrication of Over-Damped Josephson Junctions With MgB2/Al/AlN/MgB2 Structures
    Hisashi Shimakage; Zhen Wang, MgB2/Al/AlN/MgB2 Josephson junctions were fabricated on c-plane sapphire substrates. The current-voltage characteristics of the junctions were over-damped characteristics without any excess current. The critical current was ideally modulated by applying an external magnetic field. By the evaluation of the junction uniformity of 11- and 101-arrayed junctions, 1 sigma values of 7.9% and 10.2% were obtained. For parallel junctions, clear current modulations were observed on applying a magnetic field., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, Jun. 2009, [Reviewed]
  • Systematic characterization of upper critical fields for MgB2 thin films my means of the two-band superconducting theory
    S. Noguchi; A. Kuribatashi; T. ohba; Y. Iriuda; Y. Harada; M Yoshizawa; S. Miki; H. Shimakage; Z. Wang; K. Sato; Y. Yotsuya; T. Ishida, Last, We present experimental results for the upper critical fields H-c2 of various MgB2 thin films prepared by molecular beam epitaxy, multiple-targets sputtering, and co-evaporation deposition. Experimental data for the H-c2(T) are successfully analyzed by applying the Gurevich theory of dirty two-band superconductivity in the case of D pi/D sigma > 1, where D pi and D sigma are the intraband electron diffusivities for the pi and sigma bands, respectively. We find that the parameters obtained from the analysis are strongly correlated to the superconducting transition temperature T-c of the films. We also discuss the anomalous narrowing of the transition width at intermediate temperatures confirmed by the magnetoresistance measurements., IOP PUBLISHING LTD
    Supercondor Science and Technology, 2009, [Reviewed]
  • Two-band nature of upper critical fields in MgB2 thin films investigated by 37T pulsed magnet
    Satoru Noguchi; Akihiro Kuribayashi; Yoshitomo Harada; Masato Yoshizawa; Shigehito Miki; Hisashi Shimakage; Zhen Wang; Kazuo Satoh; Tsutomu Yotsuya; Takekazu Ishida, We present experimental and calculated phase diagrams of the upper critical field H-c2 and the anisotropy parameter gamma of various MgB2 thin films prepared by the molecular beam epitaxy (MBE) and the multipletargets Sputtering system. Experimental data of the H-c2(T) and gamma are analyzed by fitting the Gurevich theory. We obtained the result that for these MgB2 films the H-c2(T) is explained as the case of D-pi/D-sigma > 1, which means the films are classified to the cleaner pi band than the sigma band. We discuss temperature dependence of the transition width obtained from the magnetoresistance measurements. (C) 2008 Elsevier Ltd. All rights reserved., PERGAMON-ELSEVIER SCIENCE LTD
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, Dec. 2008, [Reviewed]
  • Ultrathin MgB(2) films fabricated by the co-evaporation method at high Mg evaporation rates
    Hisashi Shimakage; Masahiro Tatsumi; Zhen Wang, Ultrathin MgB(2) films were fabricated by using a co-evaporation method. We increased the Mg evaporation rate up to 32 nm s(-1) by adjusting the chamber configuration and succeeded in fabricating MgB(2) thin films with high quality at a high substrate temperature of 350 degrees C. The thickness dependence of the thin film characteristics showed that an ultrathin film with a thickness of 4.2 nm had superconducting properties with a critical temperature of 8 K and a resistivity of 1200 mu Omega cm at 40 K. The mean roughness of a 15 nm thick MgB(2) thin film was 0.18 nm, which indicated that our MgB(2) thin films have the potential to fabricate sub-micron size patterns., IOP PUBLISHING LTD
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, Sep. 2008, [Reviewed]
  • Thermal cycling properties of Bi2Sr2CaCu2Ox stacks fabricated by self-planarizing process
    Takahiro Kato; Kumi Okanoue; Mitsuo Suzuki; Hisashi Shimakage; Katsuyoshi Hamasaki, We have investigated the thermal cycling properties of critical and return currents in Bi2Sr2CaCu2Ox (Bi-2212) stacks. The stacks with an area of 30 x 40 mu m 2 were fabricated by self-planarizing process. The samples were coated by overlying layers of SiO2 and AZ-5206E photoresist. The current-voltage characteristics of the stacks exhibited large hysteresis and multiple branches, which can be explained by a series connection of highly capacitive Josephson junctions. The observed temperature dependence of critical current I-c(T) at low temperatures was found to agree with Ambegaokar and Baratoff (AB) relation. The return current I-r(T) stayed almost constant up to about 40 K, but at higher temperatures the I-r(T) gradually increased with increasing temperature and fell on the AB line for all stacks. No apparent degradation of the critical and return currents was observed during repeated thermal cycling (up to 100 cycles) between 300 K and 77 K. This suggests that the Bi-2212 stacks fabricated by the self-planarizing process have sufficient stability for thermal cycling., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, Sep. 2008, [Reviewed]
  • Overdamped characteristics of multilayered MgB2/AlN/Al/MgB2 Josephson junction
    H. Shimakage; Z. Wang, Lead, MgB2 /Al/AlN/ MgB2 multilayered Josephson junctions were fabricated on c -plane sapphire substrates. The measured current-voltage characteristics were well fitted with a resistively and capacitively shunted junction model. For a junction with 0.56-nm-thick AlN and 10-nm-thick Al layers, the current density was 740 A/ cm2 and the IC R N product was 210 μV. The Josephson currents were found to be ideally modulated in accordance with theoretical calculations by an external magnetic field. Clear Shapiro steps were observed under irradiation at 95.622 GHz, and fourth step was obtained. Shapiro step heights were consistent with the resistively and capacitively shunted junction model. © 2009 American Institute of Physics.
    Journal of Applied Physics, 2008, [Reviewed]
  • Alpha-ray detection with a MgB2 transition edge sensor
    S. Okayasu; M. Hojyo; Y. Morii; S. Miki; H. Shimakage; Z. Wang; T. Ishida, Last, We have been investigating for neutron detection with the MgB2 transition edge sensor (TES). For the purpose, we have been developing a low noise measurement system for the detection. To confirm the performance of the detecting sensor, alpha ray detection from an americium-241 (Am-24) alpha-ray source was achieved. A short microfabricated sample with 10 mu m length and 1 mu m width is used to improve the S/N ratio. The detection is achieved under a constant current condition in the range between 1 and 6 mu A bias current, and the resistivity changes at the sample due to the alpha ray irradiation is detected just on the transition edge. (C) 2008 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2008, [Reviewed]
  • Nonequilibrium response of a meandered MgB2 sensor by the irradiation of a pulsed laser
    Y. Fujita; K. Arai; M. Nishikawa; K. Sato; M. Yotsuya; H. Shimakage; S. Miki; Z. Wang; M. Machida; M. Kato; T. Ishida, Last, We studied the thermal response of superconducting MgB2 detectors by irradiating 20-ps pulsed laser. We produced a 1-mu m or 3-mu m line and space meandered line of MgB2 film on a sapphire substrate. We used a low-noise HEMT preamplifier at 23 K or a low-noise preamplifier at room temperature to recover tiny signals. Systematic studies of the transient signals with various bias currents and temperatures are reported to optimize measurement conditions. The maximum operating speed of our MgB2 detector was found to be 1.3 ns when the fast electronics was used. Our MgB2 detector can be used as a neutron detector by using nuclear reaction between neutron and B-10 in MgB2. (C) 2008 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2008, [Reviewed]
  • Superconducting MgB2 Thin Film Detector for Neutrons
    T. Ishida; M. Nishikawa; Y. Fujita; S. Okayasu; M. Katagiri; K. Sato; M. Yotsuya; H. Shimakage; S. Miki; Z. Wang; M. Machida; M. Kato, Last, The superconducting neutron detector using high-quality B-10-enriched MgB2 thin films at higher operating temperatures has been proposed, where a resistance change induced by the nuclear reaction of neutron and B-10 in MgB2 is used to detect a neutron. Cold neutrons from a nuclear research reactor irradiated the MgB2 detector, and the output voltage was clearly observed through a low-noise amplifier by using a digital oscilloscope. The out-of-equilibrium thermodynamics was investigated by means of the time-dependent Ginzburg-Landau equations by using the Earth Simulator., SPRINGER/PLENUM PUBLISHERS
    Journal of Low Temperature Physics, 2008, [Reviewed]
  • Fabrication and characterization of MgB2 films with, two-dimensional artificial pinning centers using ZnO nanowires
    A. Saito; K. Nomura; S. Takeda; Y. Taniguchi; H. Shimakage; Z. Wang; K. Kametani; S. Fujita; S. Hirano; S. Ohshima, We fabricated MgB2 thin films on off-cut c-plane sapphire substrates with ZnO nanowires arranged along the edges of nanosteps to investigate the effect of two-dimensional artificial pinning centers (2D-APCs) on superconducting,thin films. First, the ZnO nanowires were fabricated on the c-plane sapphire substrates with the MOCVD technique. Then, the MgB2 thin films (200 nm) were deposited on the substrates with a carrousel-type magnetron sputtering system. The AFM images and XRD (2 theta/theta) patterns of samples with and without ZnO nanowires show that fabricating ZnO nanowires on the substrates has a negligible effect on the crystallinity, of the MgB2 thin films. The surface resistance (R-s) of these thin films was measured at 38 GHz with a dielectric resonator method both with and without an external dc magnetic field. A dc magnetic field of up to 2.1 T has been applied using a superconducting magnet. The R-s of the MgB2 thin films with nanowires was found to be larger than that of thin films without nanowires in the absence of external magnetic field, whereas, the R-s of the MgB2 thin films with nanowires was found to be smaller than that of those without nanowires in the external dc magnetic field from 0.7 T to 2.1 T. These results suggest that the ZnO nanowires acted as 2D-APCs., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, Jun. 2007, [Reviewed]
  • An investigation of the thermal cycling stability of Bi2Sr2CaCu2Ox stacks fabricated by self-planarizing process
    T. Kato; K. Okanoue; M. Suzuki; H. Shimakage; K. Hamazaki, Last, We have investigated the thermal cycling properties of Bi2Sr2CaCu2O chi, (Bi-2212) stacks since the thermal stability is one of the most important factors in determining successful applications of the Josephson effect. The stacks with an area of 30 x 40 cm(2) or 15 x 40 cm(2) were fabricated by self-planarizing process. The surfaces of the device with or without a 100 nm-thick overlying SiO2 layer were coated by AZ-5206E photoresist to protect from water vapor in the air. The current-voltage (I-V) characteristics of the stacks exhibited large hysteresis and multiple branches, which can be explained by a series connection of highly capacitive Josephson junctions. The observed critical currents (I-c) for the surface junctions in the stacks did not change with thermal cycling up to 150 cycles repeated between 77 and 300 K. This suggests that the self-planarized Bi-2212 stacks have sufficient stability for thermal cycling. (C) 2007 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2007, [Reviewed]
  • Superconducting radiation detector by using a microfabricated MgB2 meander line
    T. Ishida; M. Nishikawa; S. Miki; H. Shimakage; Z. Wang; K. Satoh; M. Yotsuya; M. Machida; M. Kato, Last, The thermal response of an MgB2 detector was examined by using the irradiation of a 20 ps pulse laser with the aid of ultra low-noise cryogenic preamplifier. High-quality MgB2 thin films were prepared by a sputtering technique. This device can be used as a novel neutron detector by employing the B-10(n, alpha)(7) Li nuclear reaction with a local energy release of 2.3 MeV. This would be able to count individual neutrons with a repetition rate much faster than 10(6) per second. (c) 2007 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2007, [Reviewed]
  • Properties of MgB2 SIS junctions under various fabrication conditions
    H. Shimakage; Z. Wang, Lead, We investigated the optimal conditions to fabricate MgB2 superconductor-insulator-superconductor junctions. By investigating thin film qualities obtained under various deposition conditions, we found that the critical temperature depended strongly on the Mg sputtering power. Although a higher Mg sputtering power increased the MgB2 thin film's critical temperature, the dependence of the zero resistance transition width suggested that the higher Mg deposition power produced Mg-rich thin films. To evaluate the gap voltage of MgB2 thin films on c-plane sapphire substrates, we fabricated superconductor-insulator-normal metal junctions and determined that the gap voltage of MgB2 was 2.0 mV. Using these MgB2 thin films, we produced an MgB2/SiC/MgB2 junction and an MgB2/AIN/MgB2 junction. For both of these SIS junctions, we obtained clear gap structures, but at this stage, the AIN insulator appeared to be better than the SiC insulator based on current-voltage characteristics. We found that the current-voltage characteristics depend on the MgB2 thin film quality when using an AIN insulator. Our TEM measurements revealed epitaxial growth of the lower MgB2 thin films and amorphous-like growth of the upper MgB2. thin films. We obtained their depth profile with Auger electron spectroscopy, and the profile indicated that the trilayer has a nitrided and oxidized region at the insulator portion., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE Transactions on Applied Superconductivity, 2007, [Reviewed]
  • Nonequilibrium response of superconducting MgB 2 meander line against pulse laser irradiation
    Takekazu Ishida; Daisuke Fujiwara; Shigehito Miki; Kazuo Satoh; Tsutomu Yotsuya; Hisashi Shimakage; Zhen Wang; Masahiko Machida; Masaru Kato, We performed 20-ps pulse laser irradiation experiments to a superconducting MgB 2 meander line to study a thermal-relaxation process for designing an MgB 2 neutron detector. We observed a thermal-relaxation signal resulting from pulse laser irradiation. The response time was faster than 1 μs, meaning that the detector would be capable of counting events at a rate of more than 10 6 events per second. The nonequilibrium process was realistically simulated by means of the time-dependent Ginzburg-Landau equation. © 2006 American Institute of Physics.
    AIP Conference Proceedings, 01 Dec. 2006
  • Superconducting MgB 2 films as radiation detectors
    Takekazu Ishida; Daisuke Fujiwara; Masatoshi Nishikawa; Shigehito Miki; Hisashi Shimakage; Zhen Wang; Kazuo Satoh; Tsutomu Yotsuya; Masahiko Machida; Masaru Kato, The thermal response of a membrane-structured MgB 2 film can be used to detect various sorts of radiations. High-quality MgB 2 films were prepared by a sputtering technique. The MgB 2 radiation detector consisted of an MgB 2 thin-film meander line on a 0.5-μm-thick SiN membrane. The detector devices were placed in a 4 K refrigerator, and the operating temperature was controlled at a certain temperature below T c . Light from a 20-ps pulsed laser directly irradiated the MgB 2 device; the end of the optical fiber was fixed in front of the device. An erbium-doped fiber amplifier (EDFA) and a GP-IB attenuator were used to control the laser power, and the output voltage was observed through a low-noise amplifier by using a digital oscilloscope. The output signals caused by thermal response were clearly observed. Systematic studies of the output signals were conducted, and effects of device design, dc bias conditions, bias temperature, and input laser power were considered. We report the out-of-equilibrium thermodynamics, which was investigated by means of extensive computer simulations based on the time-dependent Ginzburg-Landau equations, thermodynamics, and electrodynamics. Large-scale calculations were carried out under the realistic conditions of actual devices by using an Earth Simulator (ES). One attractive application is to use the device as a novel neutron detector by employing the 10 B(n,α) 7 Li nuclear reaction with a local energy release of 2.3 MeV.
    Journal of the Korean Physical Society, 01 May 2006
  • Superconducting characteristics of a MgB 2 neutron detector fabricated on SiN membrane
    Shigehito Miki; Daisuke Fujiwara; Hisashi Shimakage; Zhen Wang; Kazuo Satoh; Tsutomu Yotsuya; Takekazu Ishida, We report a fabrication process for membrane-structured superconducting MgB 2 neutron detectors and measurement of superconducting DC-characteristics. We prepared a MgB 2 thin film on a SiN-film-coated Si substrate using multiple-target sputtering system. The 200-nm-thick MgB 2 thin film was processed to create meandering lines by e-beam lithography technique, where the line width was 3 μm and the total length reached 6.3 mm. After the front side of the device had been fabricated, the back side of the device was etched with anisotropic Si etching using ethylene diamine pyrocatechol and etching apparatus to increase the sensitivity of the device. The membrane-structured MgB 2 device showed good performance of the transition to superconductivity, namely, a T C,onset of 26.24 K, a T C,offset of 26.02 K, ΔT c of 0.22 K, and an RRR of 1.15. © 2006 Elsevier B.V. All rights reserved.
    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 14 Apr. 2006
  • Thermal transient response of membrane-structured-superconducting MgB2 detector by using 20-ps pulse laser
    Takekazu Ishida; Daisuke Fujiwara; Shigehito Miki; Hisashi Shimakage; Zhen Wang; Kazuo Satoh; Tsutomu Yotsuya; Masahiko Machida; Masaru Kato, We carried out 20-ps pulse laser irradiation experiments to a superconducting MgB2 meander line to understand a thermal excitation and relaxation processes, which are critical for developing as MgB2 neutron detectors. We observed an exponential thermal-relaxation signal, resulting from pulse laser irradiation. The response time was faster than 1 μs, meaning that the detector would be capable of counting events at a rate of more than 106 events per second. The nonequilibrium process was realistically simulated by means of the system of the time-dependent Ginzburg-Landau equation, the Maxwell equation, and the heat diffusion equation. © 2005 Elsevier B.V. All rights reserved.
    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Apr. 2006, [Reviewed]
  • MgB2 thin films and MgB2/AlN/MgB2 SIS junctions
    H Shimakage; Z Wang, As-grown MgB2 thin films were fabricated by a sputtering method and a co-evaporation method. We found that the critical temperatures strongly depended on the deposition rate. The MgB2 thin films showed critical temperatures of 29 K for the sputtering method and 35 K for the co-evaporation method with relatively low substrate temperatures. For the fabrication of all MgB2 SIS junctions, we selected AlN as the material for the barrier layer, which has hexagonal crystal structure. In fabricating MgB2/AlN/NbN junctions, we found that the AlN deposition with a higher substrate temperature formed insulator layers other than AlN. We also prepared MgB2/AlN/MgB2 trilayers for SIS junctions using low AlN deposition temperature condition without breaking the vacuum. The MgB2/AlN/MgB2 junctions showed a clear Josephson current and gap structures. The critical current density was 120 A/cm(2) and the ratio of sub-gap resistance and the normal resistance was 3.3 when the AlN insulator thickness was 0.14 nm. We showed current-voltage characteristics of the MgB2/AlN/MgB2 junctions with varying AlN layer thicknesses. (c) 2006 Published by Elsevier B.V., ELSEVIER SCIENCE BV
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, Mar. 2006, [Reviewed]
  • Characteristics of all-MgB2 superconductor– insulator–superconductor junctions obtained with as-grown MgB2 thin films
    H. Shimakage; Z. Wang, Lead, All-MgB2 SIS junctions were fabricated on c-plane sapphire substrates using AlN film for the insulator layer. The critical temperature of the lower MgB2 layer after the SIS junction fabrication process was 29 K, which remained the same as that of bare MgB2 films. On the other hand, the critical temperature of the upper MgB2 layer was depressed to 17 K. The current-voltage characteristics showed typical SIS properties with very clear tunnelling currents and gap voltages, demonstrating an excellent insulator covering of the lower MgB2 films. The Josephson current decreased exponentially with increasing AlN insulator layer thickness, and a Josephson current of 115 A cm(-2) was obtained for the junction with a 0.14 nm thick AlN insulator. However, the Josephson currents of MgB2/AlN/MgB2 junctions were lower than that of MgB2/AlN/NbN junctions with the same AlN thickness; this indicated the existence of other insulator layers. The ideal modulation of Josephson current was observed by applying an external magnetic field; this indicated a uniform tunnelling current flow in the junctions. The gap voltages were investigated on the basis of the current-voltage characteristics., IOP PUBLISHING LTD
    Superconductor Science and Technology, 2006, [Reviewed]
  • MgB2 thin films and MgB2/AlN/MgB2 SIS junctions               
    H. Shimakage; Z. Wang, Lead
    Physica C, 2006, [Reviewed]
  • Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers
    K. Tsujimoto; H. Shimakage; Z. Wang; M. Tonouchi, Corresponding, The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB2 thin film were investigated. The AlN buffer layers and as-grown MgB2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 °C. The crystallinity of the AlN/MgB2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB2 had the same in-plane alignment rotated at an angle of 30° as compared to c-cut sapphire. The critical temperature of the MgB2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K. © 2005 Elsevier B.V. All rights reserved.
    Physica C, 2006, [Reviewed]
  • Preparation conditions and characterization of self-planarized Bi2Sr2CaCu2Ox stacks
    K. Okanoue; T. Ishida; K. Hamazaki; H. Shimakage; Z. Wang, Last, We investigated the preparation conditions and device characterization of stacked Bi2Sr2CaCu2Ox (Bi-2212) intrinsic Josephson junctions. The stacks were fabricated by self-planarizing process. In this process the Bi-2212 crystal around the stack was modified to insulator by soaking it into the solution of dilute (<= 0.2%) hydrochloric acid. The Auger electron spectroscopy (AES) depth profile for the acid-treated layer indicated the reduction of O, Ca and Sr atoms in the crystal. In atomic force microscopy (AFM) images, no step was observed at the edge of the junction window for the sample soaked it into the dilute (<= 0.2%) hydrochloric acid for 5 s. We also analyzed the temperature dependences of the critical and return currents of the stacks. (c) 2006 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2006, [Reviewed]
  • Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers
    K Tsujimoto; H Shimakage; Z Wang; N Kaya, The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB2 thin film were investigated. The AlN buffer layers and as-grown MgB2, thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 degrees C. The crystallinity of the AlN/MgB2 bi-layer was studied using the XRD phi-scan and it showed that AlN and MgB2 had the same in-plane alignment rotated at an angle of 30 degrees as compared to c-cut sapphire. The critical temperature of the MgB2 film was 29.8 K and the resistivity was 50.0 mu Omega cm at 40 K. (c) 2005 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, Oct. 2005, [Reviewed]
  • Fabrication of superconducting MgB2 neutron detectors on Si3N4 membranes
    S Miki; D Fujiwara; H Shimakage; Z Wang; K Satoh; T Yotsuya; T Ishida, We report a fabrication process for membrane-structured superconducting MgB2 neutron detectors and measurement of their dc-characteristics. We prepared B-10-enriched MgB2 thin films on Si3N4-film-coated Si substrates using a multiple-target sputtering system. The 170 nm thick MgB2 thin films were processed to create meandering lines by e-beam lithography, where the line width was 1 mu m and the total length reached 37.5 cm. After the front side of the device had been fabricated, it was placed into an etching apparatus to protect it. Then, the backside of the device was etched with anisotropic Si etching using ethylene diamine pyrocatechol (EDP) to increase the sensitivity of the device. The membrane-structured MgB2 device showed superconductivity, namely, a T-C,T-onset of 28.2 K, a T-C,T-offset of 27.3 K, and an RRR of 1.18., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, Jun. 2005, [Reviewed]
  • Characteristics of as-grown MgB2 thin films made by sputtering
    H Shimakage; S Miki; K Tsujimoto; Z Wang; T Ishida; M Tonouchi, We describe the characteristics of MgB2 thin films, which were deposited by sputtering. Under optimized conditions, the critical temperature was 29 K and the surface roughness of the films was 10 nm. The 1-micrometer-wide, 47.3-centimeter-long meander lines fabricated using the films had almost the same critical temperature and resistivity as of the MgB2 films. However, magnetic susceptibility data showed that there was a relatively broad (approximately 8 K) superconductivity transition, which indicates that the films had nonuniformity in the thickness direction. From the magnetic-field dependence of the resistivity-temperature curve, H-C2(O) was estimated to be 12 T in the ab-axis direction and 10 T in the c-axis direction. We also estimated that the coherent length was 4.8 nm in the c-axis direction and 5.7 nm in the ab-axis direction. The anisotropy value was 1.2, which is smaller than the values reported elsewhere. From the magnetic susceptibility measurements, the critical current density was estimated to be 1.7 x 10(6) A/cm(2)., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, Jun. 2005, [Reviewed]
  • Self-planarizing process for the fabrication of Bi2Sr2CaCu2Ox stacks
    T. Ishida; K. Okanoue; K. Hamazaki; H. Shimakage; Z. Wang, Last, We developed a new fabrication process for stacked intrinsic Josephson junctions using Bi2Sr2CaCu2Ox (Bi-2212) single crystals. For the fabrication of self-planarized stacks, the Bi-2212 around the stack was changed into an insulator by dipping it in a solution of dilute hydrochloric acid. For the solution concentration < 0.2%, the planarization of the stack was fully achieved. For the concentration >0.5%, however, the planarization was spoiled. The current-voltage characteristic of the stacks showed distinct resistive branches with large hysteresis at 77 K. The number of intrinsic junctions in the stacks linearly decreased with decreasing the concentration of the solution in the range from 0.05% to 0.2 %. The good controllability of the number of junctions in the self-planarized stacks may be useful for electronic device applications. (C) 2005 American Institute of Physics., AMER INST PHYSICS
    Applied Physics Letters, 2005, [Reviewed]
  • Insulator layer formation in MgB2 SIS junctions
    H. Shimakage; K. Tsujimoto; Z. Wang; M. Tonouchi, Last, The dependence of current-voltage characteristics on thin film deposition conditions was investigated using MgB2/ AlN/NbN SIS junctions. By increasing the substrate temperature in AlN insulator deposition, the current density decreased and the normal resistance increased. The results indicated that an additional insulator layer between the MgB2 and AlN formed, either before or during the AlN deposition. The thickness of the additional insulator layer was increased with in increase in the AlN deposition temperature. From the dependence of current density on the thickness of AlN in low temperature depositions, the thickness of the additional insulator layer was estimated to be 1-1.5 nm when the AlN insulator was deposited from 0.14 to 0.7 nm. Moreover, with the current density of MgB2/AlN/MgB2 SIS junctions, further insulator layer formation was confirmed. (c) 2005 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2005, [Reviewed]
  • Upper critical field measurements in MgB2 sputtered films up to 30 T
    S. Noguchi; S. Miki; H. Shimakage; K. Satoh; M. Yotsuya; Z. Wang; T. Ishida, Last, We report on the tipper critical field (H-c2) of as-grown MgB2 thin films deposited on c-plane sapphire substrates using a carrousel-type multiple-targets sputtering system. The H-c2 was estimated from the rnagnetoresistance measurements by using dc 4-terminal method under pulsed magnetic fields tip to 30 T. The H-c2(T) for H vertical bar vertical bar ab-plane and H vertical bar vertical bar c-axis were measured to obtain the anisotropic superconducting properties. Large enhancement in magnitude and small anisotropy were observed in the H-c2(T) Curves of the thin film samples as compared to those reported for bulk single crystals. (c) 2005 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2005, [Reviewed]
  • Fabrication and characterization of Bi2Sr2CaCu2O8+δ stacks by self-planarizing process
    K. Okanoue; T. Ishida; K. Hamazaki; H. Shimakage; Z. Wang, Last, We developed a new fabrication process of stacked intrinsic Josephson junctions using superconducting Bi2Sr2CaCu2O8+delta (Bi-2212) single crystals. In the proposed self-planarizing process, the Bi-2212 crystal around the junction window was modified to insulator by soaking into the solution of dilute (0.05-0.2%) hydrochloric acid for 5 s. Energy dispersive X-ray (EDX) spectroscopy revealed that the acid-treated Bi-2212 exhibited the decrease of Cu and Sr contents in the crystals. The current-voltage characteristic of the stacks showed distinct resistive branches with large hysteresis at 77 K. The number of intrinsic junctions in the stacks linearly decreased with decreasing the concentration of the solution. The well controllability of the number of junctions in the self-planarized stacks may be useful for electronic device applications. (c) 2005 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2005, [Reviewed]
  • Pulse laser irradiation into superconducting MgB2 detector
    D. Fujiwara; S. Miki; K. Takahashi; H. Shimakage; K. Satoh; M. Yotsuya; K. Moriwaki; K. Fukuda; A. Saito; Z. Wang; T. Ishida, Last, We performed 20-ps pulse laser irradiation experiments on a MgB2 neutron detector to know a thermal-relaxation process for designing a MgB2 neutron detector. The membrane-type structured MgB2 device was fabricated to minimize the heat capacity of sensing part of a detector as well as to enhance its sensitivity. We successfully observed a thermal-relaxation signal resulting from pulse laser irradiation by developing a detection circuit. The response time was faster than 1 mu s, meaning that the detector would be capable of counting neutrons at a rate of more than 106 events per second. (c) 2005 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2005, [Reviewed]
  • All-MgB2 tunnel junctions with aluminum nitride barriers
    H. Shimakage; K. Tsujimoto; Z. Wang; M. Tonouchi, Lead, All-MgB2 tunnel junctions were fabricated on a C-plane sapphire substrate. The current-voltage characteristics showed both quasiparticle and Josephson tunneling currents and a clear gap structure. The current density was 115 A/cm(2) for a 20 x 20 mum(2) junction with a 0.14-nm-thick AlN Iayer, and the ratio of the subgap resistance and normal resistance was 3.3. The gap voltages of lower and upper MgB2 electrodes were estimated to be 2.2 and 1.5 mV, respectively. The temperature dependence of the Josephson current indicated that a normal layer existed between the AlN and the MgB2 electrodes. The Josephson tunneling currents were clearly modulated by applying an external magnetic field. (C) 2005 American Institute of Physics., AMER INST PHYSICS
    Applied Physics Letters, 2005, [Reviewed]
  • Neutron detector by using a metallic high-T-c superconductor MgB2
    K Takahashi; S Miki; K Satoh; K Moriwaki; K Fukuda; T Yotsuya; H Shimakage; Z Wang; S Okayasu; M Katagiri; Y Morii; K Hojou; N Niimura; T Ishida, We propose a new neutron detector, which consists of MgB2 superconductor. We use a nuclear reaction of B-10(n,alpha)Li-7, where B-10 has a large cross section for thermal neutrons. The thermal energy, released by this reaction, breaks the superconductivity in the small region of the detector and causes the electric resistance variations of MgB2. Since the ranges of alpha and Li-7 particles are on the order of mum, we fabricate the meandering pattern of width 1 mum on the MgB2 film in order to enhance the detection efficiency. This meandering pattern exhibits the sharp superconducting transition in R-T curve, which is required for neutron detector. (C) 2004 Published by Elsevier B.V., ELSEVIER SCIENCE BV
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, Oct. 2004, [Reviewed]
  • Nanofabrication of superconducting MgB 2 neutron detector
    Shigehito Miki; Ken'ichi Takahashi; Daisuke Fujiwara; Hisashi Shimakage; Zhen Wang; Kazuo Satoh; Tsutomu Yotsuya; Kousuke Moriwaki; Hiroki Fukuda; Satoru Okayasu; Masaki Katagiri; Yukio Morii; Kiichi Hojou; Nobuo Niimura; Takekazu Ishida, We report on the fabrication of MgB 2 neutron detector based on 10 B enriched superconducting MgB 2 thin films. The MgB 2 thin films were prepared by a multiple targets sputtering system. To increase the nuclear reactions of MgB 2 with neutrons, we used a 10 B-enriched target (97.0%). The MgB 2 meander lines with SiO protect layer and Al electrodes were fabricated by e-beam lithography, conventional etching and deposition techniques. The meander line width was 1.0μm and the total length reached 47.3cm. The DC characteristics measurements showed that the superconducting DC characteristics of fabricated MgB 2 meander lines were almost the same with the unprocessed film. © 2004 Elsevier B.V. All rights reserved.
    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 21 Aug. 2004
  • XRD and TEM studies of as-grown MgB2 thin films deposited on r- and c-plane sapphire substrates
    A. Saito; H. Shimakage; A. Kawakami; Z. Wang; S. Kuroda; K. Abe; M. Naito; M. Mukaida; S. Ohshima, Last, As-grown MgB2 thin films were deposited on r-plane (1 1 2) and c-plane (0 0 1) sapphire substrates by using a carrousel-type magnetron sputtering system. Even though the respective critical temperature and residual-resistivity ratio of the MgB2 films deposited on r- and c-plane sapphire substrates were nearly the same in both cases, the resistivity of the films on the c-plane sapphire substrates, p(40 K) about 50 muOmega cm, were lower than that on the r-plane sapphire substrates, p(40 K) about 300 muOmega cm. Standard theta/2theta X-ray diffraction measurements showed that the MgB2 thin films deposited on the c-plane sapphire substrates have c-axis orientation. Cross-sectional transmission electron microscope images showed that the MgB2 thin films deposited on both the r- and c-plane sapphire substrates contain columnar structures. According to the results of selected-area electron-diffraction patterns, the films deposited on the c-plane sapphire substrates had c-axis orientation and the films on the r-plane sapphire substrates including the amorphous MgB2 also had c-axis orientation. These results indicate that selection of the cut-plane of the sapphire substrates is very important to grow the high-quality as-grown MgB2 thin films. (C) 2004 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2004, [Reviewed]
  • Superconducting dc Characteristics of Meander Lines Made by 10B Enriched MgB2 Thin Films
    S. Miki; K. Takahashi; D. Fujiwara; H. Shimakage; K. Satoh; M. Yotsuya; K. Moriwaki; K. Fukda; A. Saito; Z. Wang; T. Ishida, Last, We report on fabrication and superconducting dc characteristics of meander lines made by B-10-enriched MgB2 thin films. The MgB2, thin films were prepared by a multiple targets sputtering system. To improve the superconductivity of MgB2, thin films, we used a B-10-rich (97.0%) target. The films on Al2O3 substrates showed excellent properties: T-C of 29.2 K, resistivity at 40 K of 68 muOmegacm, and RRR of 1.22. The MgB2 meander lines with SiO protect layer and Al electrodes were fabricated by e-beam lithography and conventional etching and deposition techniques. The meander line width was 1.0 mum and the total length reached 47.3 cm. The dc characteristics measurements showed that the superconducting dc characteristics of fabricated MgB2 meander lines were almost the same with the unprocessed film. (C) 2004 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2004, [Reviewed]
  • Characteristics of MgB2/AlN/NbN Josephson Junctions with optimized conditions
    H. Shimakage; K. Tsujimoto; Z. Wang; M. Tonouchi, Lead, We fabricated MgB2/AlN/NbN trilayer Josephson junctions on c-plane sapphire substrates, and investigated the dependence of the MgB2 surface morphology on MgB2 growth temperature. AFM measurement showed that the grain size was about 150 nm and the surface roughness was about 10 nm when deposition was done at the highest critical temperature. The critical temperature of the MgB2 layer after SIS junction fabrication remained the same as that for bare MgB2 film. The current-voltage characteristics of the MgB2/AlN/NbN junctions showed a very clear Josephson current and a gap structure. The critical current density was over 1 kA cm(-2), and the ratio of the sub-gap resistance to the normal resistance was 16.6 when the AlN insulator thickness was 0.14 nm. The critical current was ideally modulated by applying a magnetic field, indicating that showed that the Josephson current flowed uniformly in the junctions., IOP PUBLISHING LTD
    Supercondor Science and Technology, 2004, [Reviewed]
  • Transverse voltage in zero external magnetic fields, its scaling and violation of the time-reversal symmetry in MgB2
    P. Vašek; H. Shimakage; Z. Wang, Last, The longitudinal and transverse voltages (resistances) have been measured for MgB2 in zero external magnetic fields. Samples were prepared in the form of thin film and patterned into the usual Hall bar shape. In close vicinity of the critical temperature T. non-zero transverse resistance has been observed. Its dependence on the transport current has been also studied. New scaling between transverse and longitudinal resistivities has been observed in the form rho(xy) similar to drho(xx)/dT. Several models for explanation of the observed transverse resistances and breaking of reciprocity theorem are discussed. One of the most promising explanation is based on the idea of time-reversal symmetry violation. (C) 2004 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2004, [Reviewed]
  • Fabrication condition dependence of as-grown MgB2 thin films by co-evaporation method
    H. Shimakage; A. Saito; A. Kawakami; Z. Wang, Lead, MgB2 thin films made using a co-evaporation method under a variety of deposition conditions were evaluated. The as-grown thin film characteristics on sapphire (0001) substrates were found to be greatly dependent on the conditions surrounding the film fabrication. It was found that a higher substrate temperature and higher deposition rates resulted in more favorable conditions for the fabrication of higher quality films, and the precious controls of the process parameter were essential for uniform films. The AFM photographs showed that the films for the higher B deposition rate have small grains, and the resistivity was significantly degraded compared with a lower B deposition rate. The highest critical temperature for the film was around 35 K. We anticipate that the properties of thin films will be improved after the development of further optimization procedures. (C) 2004 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    IEEE Transactions on Applied Superconductivity, 2004, [Reviewed]
  • Fabrication of Josephson junctions with As-grown MgB2 thin films
    A Saito; A Kawakami; H Shimakage; H Terai; Z Wang, We report on the fabrication of as-grown MgB2 thin films and MgB2/AlN/NbN thin film heterostructures having as-grown MgB2 thin films. The MgB2 thin films deposited by using a carrousel-type sputtering system at substrate temperatures T-s of 252degreesC typically showed a critical temperature of 28 K. The results of XRD measurements of the thin films indicated a c-axis orientation. The surface morphology of the films fabricated at T-s = 252degreesC was determined to be very flat and smooth from SEM images. The MgB2/AlN/NbN trilayer was continuously deposited on sapphire (001) substrates in a single vacuum run. The AlN-barrier and NbN-counter layers were deposited by using DC-reactive magnetron sputtering at ambient substrate temperatures. The junctions were fabricated by using conventional photolithography, reactive ion etching, and electron cyclotron resonance etching techniques. The junctions demonstrated excellent quasiparticle tunneling characteristics having ideal dependence of the normal resistance on the junction area and on the AlN-barrier thickness. Also, the DC magnetic field and temperature dependences of the supercurrent I-c were measured to investigate the Josephson tunneling behavior in the MgB2/AlN/NbN junctions. The junction I-c-H curve showed the ideal Fraunhofer pattern., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, Jun. 2003, [Reviewed]
  • Preparation of As-grown MgB2 thin films by co-evaporation method at low substrate temperature
    H Shimakage; A Saito; A Kawakami; Z Wang, MgB2 thin film growth on sapphire (0001) and MgO substrates is reported. The thin films were deposited by using the co-evaporation method, in which the deposition rates were well controlled separately. The as-grown thin films demonstrated superconductivity without the use of any post-annealing process. The critical temperature dependence of the substrate temperature and the evaporation rates were investigated, and it was found that a high substrate temperature and high deposition rates are needed to produce high-quality films. Below a substrate temperature of 250 degreesC, the films exhibited no x-ray diffraction peaks, but above it, the films tended to grow epitaxially to c-axis on sapphire (0001) substrate. The critical temperature of MgB2 film was over 30 K, and MgB2 thin films made by co-evaporation method are expected to have excellent properties after further optimization., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, Jun. 2003, [Reviewed]
  • Design of neutron detector by using a novel superconductor MgB2
    K. Takahashi; K. Satoh; M. Yotsuya; S. Okayasu; A. Saito; K. Katagiri; A. Kawakami; H. Shimakage; Z. Wang; T. Ishida, Last, It is difficult to detect neutrons compared to charged particles. A novel metallic superconductor MgB2 has a high T-c of 40 K. It is well known that the B-10 has a huge cross-section for the nuclear reaction of B-10(n, alpha)Li-7. It reaches 3800 barns for thermal neutrons. The Li particle has 0.84 MeV while alpha particle has 1.47 MeV. We propose to use the MgB2 as a superconducting neutron detector. We design a prototype of a MgB2 neutron detector from an MgB2 film where the electron beam lithography is employed to fabricate a meandering MgB2 stripe line of the 1-mum width. The hot spot caused by the nuclear reaction is responsible for detecting neutrons. (C) 2003 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2003, [Reviewed]
  • Optimizing preparation of as-grown MgB2 thin films made using the co-evaporation method
    H. Shimakage; A. Saito; A. Kawakami; Z. Wang, Lead, MgB2 thin films were grown on sapphire (0 0 0 1) substrates. The thin films were deposited using the co-evaporation method, in which individual deposition rates were well controlled. The as-grown thin films demonstrated superconductivity without the use of any post-annealing process. The dependence of the characteristics of the thin film on the substrate temperature and evaporation rates was investigated. The thin films did not show superconductivity at a high substrate temperature and low deposition rate, but increasing the deposition rate greatly improved the quality of the film. It was found that a high substrate temperature and high deposition rates were essential to produce high-quality films. The critical temperature for the MgB2 film was around 35 K. MgB2 thin films made using the co-evaporation method can be expected to have excellent properties after further optimization. (C) 2003 Elsevier B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2003, [Reviewed]
  • Josephson tunneling properties in MgB2/AlN/NbN tunnel junctions
    A Saito; A Kawakami; H Shimakage; H Terai; Z Wang, We report on the fabrication of Josephson tunnel junctions with as-grown MgB2 thin films and on the Josephson tunneling properties of the junctions. MgB2/AlN/NbN trilayers were continuously deposited on sapphire (0001) substrates in the same vacuum run. The as-grown MgB2 thin films were fabricated using the conventional sputtering method at the low-substrate temperature of 250 degreesC, and the AlN tunnel barrier and the NbN counter electrode were deposited by reactive sputtering at the ambient substrate temperature. The T-c of the MgB2 thin films was 28 K. The junctions demonstrated clear Josephson tunneling characteristics with evident supercurrents, gap voltages, and small subgap leakage currents. The normal resistance of these junctions had an ideal dependence on the junction areas and on the AlN-barrier thickness. The temperature dependence of the gap voltages and the external dc magnetic-field dependence of the supercurrents were measured to investigate the Josephson tunneling behaviors in the MgB2/AlN/NbN junctions. The junctions showed BCS-like temperature dependence of the gap voltage and ideal Fraunhofer patterns. (C) 2002 American Institute of Physics., AMER INST PHYSICS
    JOURNAL OF APPLIED PHYSICS, Dec. 2002, [Reviewed]
  • As-grown MgB2 thin films deposited on Al2O3 substrates with different crystal planes
    A. Saito; A. Kawakami; H. Shimakage; Z. Wang, Last, We present the results of an investigation of the crystal structures and superconducting properties of as-grown MgB2 superconducting thin films deposited on Al2O3 substrates having different crystal planes (C- and R-planes). The MgB2 thin films were prepared by a multiple-target sputtering method without performing a post-annealing process. The MgB2 films deposited on the C-plane Al2O3 substrates were found to have a c-axis orientation, from the results of 2theta/theta x-ray diffraction (XRD) measurements. However, there were no MgB2 peaks for the films grown on the R-plane Al2O3 substrates. Even though the maximum Tc values of both films deposited on the G and R-plane Al2O3 substrates were nearly the same, T-c,T-onset similar to28 K and residual resistivity ratio similar to1.2, it is very interesting to note that the resistivity of the films on the C-plane Al2O3, p similar to 70 muOmega cm at 40 K, was lower than that on the R-plane Al2O3, P similar to 300 muOmega cm at 40 K. These results indicate that the grain size of MgB2 in the films deposited on the C-plane Al2O3 substrates was larger than that on the R-plane Al2O3, indicating a good agreement with the XRD measurements. The surface morphology of the as-grown MgB2 thin films was investigated using scanning electron microscopy. The surfaces of the films on the G and R-plane Al2O3 substrates were found to be very flat and smooth. This result indicates the high potential for fabricating Josephson tunnel junctions using as-grown MgB2 thin films., IOP PUBLISHING LTD
    IEEE Transactions on Applied Superconductivity, 2002, [Reviewed]
  • As-Grown Deposition of Superconducting MgB2 Thin Films by Multiple-Target Sputtering System
    A. Saito; A. Kawakami; H. Shimakage; Z. Wang, Last, As-grown superconducting MgB2 thin films were prepared using a multiple-target sputtering system. The targets were pure B and Mg metal. The MgB2 thin films were deposited at substrate temperatures (T-s) ranging from 207degreesC to 268degreesC on Al2O3 (1102) substrates. We found that the critical temperatures (T-c) of the films were increased with increase of the T-s. The film grown at a T-s of 252degreesC showed the highest T-e,T-onset value of 27.8 K and had a sharp transition (DeltaT(c) = 0.5 K) in the resistivity., INST PURE APPLIED PHYSICS
    Japanese Journal of Applied Physics, 2002, [Reviewed]
  • Fabrication of interface-engineered Josephson junctions on sapphire substrates
    H. Shimakage; Z. Wang; R. H. Ono; L. R. Vale, Lead, We report on a process for fabricating YBCO interface-engineered junctions on sapphire substrates. The electrical properties of the junctions thus produced were investigated across a wide range of temperatures. The current-voltage characteristics approached the characteristic of the resistively shunted junction property at high temperatures. The ICRN products of the junctions displayed a quasi-linear property. The I-V characteristics showed Shapiro steps under irradiation at 12.3 GHz, and this is consistent with the Josephson relation. We predict that the interface-engineered Josephson junction on sapphire will be suitable for ractical use in high-frequency mixers after optimization of the fabrication process. (C) 2002 Elsevier Science B.V. All rights reserved., ELSEVIER SCIENCE BV
    Physica C, 2002, [Reviewed]
  • Interface-engineered Josephson junctions with high IcRN products
    H Shimakage; RH Ono; LR Vale; Y Uzawa; Z Wang, Interface-engineered Josephson junctions were fabricated using high-temperature superconducting films, and large characteristic voltages were obtained in sub-micrometer junctions. The original 2 mum-wide junctions had large critical current densities and showed wide-junction effects as the temperature was reduced below 70 K. When the junctions were narrowed to sub-micrometer width they showed characteristics with greatly reduced wide-junction effects. Critical current-normal resistance products were over 5 mV at 4.0 K, and we observed Shapiro steps under irradiation at 93.6 GHz that were consistent with the resistively-shunted junction model including thermal noise. (C) 2001 Elsevier Science B.V. All rights reserved., ELSEVIER SCIENCE BV
    PHYSICA C, Aug. 2001, [Reviewed]
  • Interface-engineered Josephson junctions optimized for high J(C)
    H Shimakage; RH Ono; LR Vale; Z Wang, High-temperature superconducting interface-engineered junctions were fabricated using YBa2Cu3O7-x on LaAlO3 (LAO) and sapphire substrates. We report on the improvements in the electrical characteristics by junction narrowing. Originally, the 2-mum-wide junctions had high critical current densities of 1.2 x 10(6) A/cm(2) at 4.0 K and showed wide junction effects. Narrowing the junctions to below a micrometer reduced the wide junction effect over a large range of temperatures and the junctions had characteristics voltages of 5.16 mV at 4.0 K. The magnetic-field modulation of the critical current was also more ideal after narrowing. Furthermore, we show that interface engineered junctions on sapphire substrates have similar characteristics to those on LAO., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, Jun. 2001, [Reviewed]
  • Design and performance of miniaturized superconducting coplanar waveguide filters
    K Yoshida; K Saskiyama; S Nishioka; H Shimakage; Z Wang, Design and performance of coplanar waveguide (CPW) microwave filters using high Tc superconducting films have been studied. The bandpass filter made of CPW requires the coating of only one side of the substrate with a superconductor, and the width of the CPW filter can be uniformly reduced in scale without changing its characteristic impedance, leading to a miniaturized filter by adopting the meanderline geometry. In order to realize the miniaturized filter we investigate the interdigital gap with strong coupling and the modeling of the corner bend. It is shown that the size of the filter can be greatly reduced by introducing CPW with a meanderline geometry. Experiments of a prototype miniaturized CPW filter with its computer-simulated performance have been presented., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, Jun. 1999, [Reviewed]
  • Evaluation of microwave complex conductivities of YBCO thin films by weakly coupled grain model
    K Yoshida; S Nishioka; H Morita; Y Kanda; H Shimakage; Z Wang, A self consistent method for evaluating the complex conductivities of high T-c superconducting Y-Ba-Cu-O(YBCO) thin films has been studied using the coplanar waveguide resonator technique. In order to evaluate the magnetic penetration depth precisely, we measured the temperature dependence of the resonant frequency and compared it with the numerical results self consistently. In the present experiments the observed temperature dependence of the complex conductivities is shown to be able to distinguish the effects of the weaklink from the intrinsic property of the grain of an epitaxial thin film and demonstrate the weakly coupled grain model of YBCO thin films., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, Jun. 1999, [Reviewed]
  • Deposition of YBCO thin films on MgO buffer layer fabricated on Si substrates
    H Shimakage; A Kawakami; Z Wang, Epitaxial growth of YBCO thin films with a MgO buffer layer on Si(100) substrate is reported. The MgO thin film was deposited by RF magnetron sputtering, using a single crystal MgO target. The crystallization of the MgO thin films was found to be dependent on the substrate temperature and the sputtering gas mixture. The x-ray diffraction pattern showed that the MgO thin film grew epitaxially in the (200) orientation on the Si substrates in atmosphere containing nitrogen gas. YBCO thin films deposited by laser ablation on Si substrate buffered with MgO thin films had a c-axis orientation with a critical temperature of 82 K. The critical temperature was found to be dependent on the substrate temperature in depositing the MgO buffer layer. Also the surface morphology of MgO and YBCO thin films is discussed., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, Jun. 1999, [Reviewed]
  • Third harmonics generation from Y-Ba-Cu-O bicrystal Josephson junctions in coplanar waveguides
    H. Shimakage; J. C. Booth; L. R. Vale; R. H. Ono, Lead, We report harmonic generation from a bicrystal Josephson junction fabricated in the middle of a 50 Ohm coplanar waveguide (CPW). Microwave radiation was injected at one end of the CPW transmission line, and the fundamental and third-harmonic powers were measured. A decrease of the fundamental transmitted power related to thermal breakdown was observed. The third-harmonic output power from the junctions was a complicated function of the input power, showing many non-third order-effects., IOP PUBLISHING LTD
    Supercondor Science and Technology, 1999, [Reviewed]
  • Self-pumping Mixing Phenomenon in YBCO Josephson Junction
    H. Shimakage; Y. Uzawa; Z. Wang, Lead, This paper describes a Josephson self-pumping mixing experiment using YBCO step-edge Josephson junctions at 4.2 K. We used blackbody noise source as a signal, and the IF output was measured as a function of the junction bias voltage. The IF output showed two main peaks which correspond to an array of two grain boundary junctions. We obtained a 0.4 dB increase of the IF output by changing the 77 K blackbody to 300 K blackbody at 10 mu V, and the noise temperature was estimated to be about 2000 K., ELSEVIER SCIENCE BV
    Physica C, 1997, [Reviewed]
  • Residual Surface Resistanc of YBa2Cu3Ox Thin Films -Weakly Coupled Grain Model
    K. Yoshida; K. Nagasawa; T. Kiss H. Shimakage; Z. Wang, Last, The residual surface resistance and the magnetic penetration depth of high-T-c superconducting YBa2Cu3Ox thin films have been measured using the coplanar waveguide resonator technique, and are discussed with the weakly coupled grain model, where the superconducting polycrystalline thin film is described as a network of superconducting grains coupled via Josephson junctions. The observed dependence of the residual resistance and the magnetic penetration depth on the critical current density and the grain size is shown to demonstrate the weakly coupled grain model of YBa2Cu3Ox thin films., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE Transactions on Applied Superconductivity, 1997, [Reviewed]
  • Noise Temperature Measurement of YBCO Josephson Mixers in Millimeter and Submillimeter Waves
    H. Shimakage; Y. Uzawa; Z. Wang, Lead, We have investigated YBCO step-edge Josephson junctions as millimeter and submillimeter wave mixers. These mixers were integrated with an Au thin-film log-periodic antenna designed for broadband coupling of the radiation. We estimated the noise temperature of the mixer using conventional hot/cold blackbody irradiation techniques in the 100- and 300-GHz bands. We found that the Au thin-film antenna yielded about 5 dB higher coupling efficiency than that of YBCO thin film antenna, and the noise temperature decreased from 2,800 K to 1,800 K. The best receiver noise temperature, 1,200 K, was achieved in the 300-GHz band through improvement in impedance matching., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE Transactions on Applied Superconductivity, 1997, [Reviewed]
  • Intrinsic Josephson effects in 60-K phase YBCO thin film mesas
    M Tonouchi; A Itoh; T Yasuda; H Shimakage; Z Wang; S Takano, We fabricated c-axis oriented mesas oil YBa2Cu3O7-delta thin films. Columnar structures with an area of 20 x 20 mu m(2) and a depth of 0.1 mu m were formed on oxygen deficient films with a critical temperature (T-c) of 64 K or less. The devices showed hysteretic I-V curves without any branches. The dependence of the critical current density on the temperature near T, is explained by the Ambegaokar-Baratoff relation., CZECHOSLOVAK JNL OF PHYSICS
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1996, [Reviewed]
  • Weakly Coupled Grain Model for the Residual Surface Resistance of YBa2Cu3Ox Thin Films
    K. Yoshida; T. Ogami; T. Kiss; H. Shimakage; Z. Wang, Last, In the weakly coupled grain model which has been proposed to explain the residual surface resistance in high-T-c superconducting polycrystalline thin films, the superconducting polycrystalline thin film is described as a network of superconducting grains coupled via Josephson junctions. In order to evaluate this model we have fabricated the coplanar waveguide resonator using c-axis oriented YBa2Cu3Ox thin films and measured the residual surface resistance. The experimental results are in good agreement with theoretical prediction., IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
    IEICE Transactions on Electronics, 1996, [Reviewed]
  • Atomic Scale Flattening and Characterization of YBCO Film Surface
    M. Tonouchi; H. Shimakage; Z. Wang; H. Tomozawa; M. Hangyo; H. Murakami; W. Chujo; B. Komiyama, Last, Surface flattening of YBCO films with Ar ion beam exposure was studied. Atomic force microscopy (AFM) observation revealed that the surface roughness decreases with increasing ion beam exposure time. The mechanism of flattening was explained by the angular-dependent etching characteristics. A flattening effect on an atomic scale with a mean roughness of 0.8 nm was observed. Electrical measurements and Raman spectroscopy indicated that superconductivity and crystallinity of the films exposed to the ion beam were damaged due to the ion bombardment., IOP PUBLISHING LTD
    Supercondor Science and Technology, 1996, [Reviewed]
  • HIGH-T-C SUPERCONDUCTING ACTIVE SLOT ANTENNA WITH YBCO STEP-EDGE JOSEPHSON-JUNCTION ARRAY
    W CHUJO; H SHIMAKAGE; Z WANG; B KOMIYAMA, The high-T-c superconducting active antenna proposed here for millimeter and submillimeter radiowave communications, uses a YBCO slot antenna with a series Josephson junction array to increase the normal-state resistance of the junctions, in order to ensure impedance matching between the antenna and the junctions. The antenna is a coplanar waveguide fed slot antenna, which can be easily and monolithically combined with the Josephson junctions. The design frequency of the antenna is 10 GHz and the obtained bandwidth of a VSWR less than 2 was 4.1%. Normal-state resistance values of the junction array could be confirmed by measuring I-V characteristics and 100-MHz impedance measurements, and both agree very well. Microwave mixing experiments were carried out using the junction array with the antenna, and the experiments showed that the conversion gain of the junction was proportional to the number of the junctions. The conversion gain of an eight-junction mixer with the antenna was found to be -6 dB., IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
    IEICE TRANSACTIONS ON ELECTRONICS, Aug. 1995, [Reviewed]
  • MILLIMETER AND SUBMILLIMETER-WAVE RESPONSES OF YBA2CU(3)O(7) STEP-EDGE JOSEPHSON-JUNCTIONS
    H SHIMAKAGE; Y UZAWA; Z WANG; A KAWAKAMI; W CHUJO; B KOMIYAMA, We have fabricated YBCO step-edge Josephson junctions and measured the responses to the millimeter and submillimeter irradiation. In the substrate milling process for the purpose of fabricating the step, the step angle was controlled using a Nb metal mask. At a step angle of 20 degrees, we obtained Josephson junctions, the characteristics of which are consistent with the RSJ model. We estimated the capacitance to be 4.4 fF using the RSJ model, but such a value for an 8 mu m wide and 300 nm thick junction seems too small. When the junctions were irradiated by 300 GHz, Shapiro steps up to the 4th were observed. The junctions were used as mixers in the 100 GHz band, and as harmonic mixers in the 100 GHz LO and 700 GHz RF bands. Beat signals were observed in both cases. We also estimated the quasi-optical conversion losses of the step-edge junctions as mixers., IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, Jun. 1995, [Reviewed]

MISC

Lectures, oral presentations, etc.

  • YBCO 薄膜コプレーナ線路パラメトリック増幅器の利得評価               
    高橋 惟吹; 島影 尚
    第72回応用物理学会春季学術講演会, 16 Mar. 2025
    20250314, 20250317
  • 両面パターニングプロセスによるBSCCO固有ジョセフソン接合作製における結晶劈開工程の最適化               
    木内 輝; 加本 泰生; 島影 尚
    第32回電気学会東京支部茨城支所研究発表会, 30 Nov. 2024
    20241130, 20241130
  • 超伝導体の複素導電率を考慮したYBCOコプレーナライン共振器の設計とシミュレーション               
    堀口 拓郎; 高橋 惟吹; 島影 尚
    第32回電気学会東京支部茨城支所研究発表会, 30 Nov. 2024
    20241130, 20241130
  • 赤外検出器のためのSi基板に作製したモスアイ構造作製の検討               
    夜久 赳土; 島影 尚; 川上 彰
    第32回電気学会東京支部茨城支所研究発表会, 30 Nov. 2024
    20241130, 20241130
  • IJJ素子特性におけるBSCCOと金属薄膜の接触抵抗が及ぼす影響               
    向坂 孝仁; 島影 尚
    第32回電気学会東京支部茨城支所研究発表会, 30 Nov. 2024
    20241130, 20241130
  • マイクロ波帯におけるコプレーナライン共振器の周波数特性               
    布留川 将; 島影 尚
    第32回電気学会東京支部茨城支所研究発表会, 30 Nov. 2024
    20241130, 20241130
  • YBCO 薄膜により作製した伝送線路におけるパラメトリック増幅器の利得評価               
    髙橋 惟吹; 村上 綾音; 島影 尚
    第32回電気学会東京支部茨城支所研究発表会, 30 Nov. 2024
    20241130, 20241130
  • YBCO 薄膜コプレーナ線路のマイクロ波透過特性を用いた超伝導パラメトリック増幅器の利得評価               
    高橋 惟吹; 島影 尚
    第85回応用物理学会秋季学術講演会, 18 Sep. 2024
    20240916, 20240920
  • 中赤外ホットエレクトロンボロメータ用アレイアンテナの検討               
    川上 彰; 島影 尚; 堀川 隼世; 齋藤 伸吾; 関根 徳彦; 田中 秀吉
    第71回応用物理学会春季学術講演会, 25 Mar. 2024
    20240322, 20240325
  • マイクロ波透過特性による YBCO 薄膜コプレーナ線路のカイネティックインダクタンス評価               
    高橋 惟吹; 小谷 怜; 島影 尚
    第71回応用物理学会春季学術講演会, 23 Mar. 2024
    20240322, 20240325
  • YBCO薄膜コプレーナ線路の膜厚によるカイネティックインダクタンスの評価               
    髙橋 惟吹; 小谷 怜; 島影 尚
    第31 回電気学会茨城支所研究発表会, 02 Dec. 2023, 電気学会東京支部茨城支所
    20231202, 20231202
  • 非線形性に起因する伝送線路上の三次高調波発生抑制に向けた線路形状の検討               
    村上 綾音; 島影 尚
    第31 回電気学会茨城支所研究発表会, 02 Dec. 2023, 電気学会東京支部茨城支所
    20231202, 20231202
  • 超伝導伝送線路の周波数応答特性評価に対する最適化の検討               
    布留川 将; 赤岡 仁; 島影 尚
    第31 回電気学会茨城支所研究発表会, 02 Dec. 2023, 電気学会東京支部茨城支所
    20231202, 20231202
  • Ag薄膜シャントによるBSCCO固有ジョセフソン接合の弱結合型素子化               
    陳 俊全; 島影 尚
    第31 回電気学会茨城支所研究発表会, 02 Dec. 2023, 電気学会東京支部茨城支所
    20231202, 20231202
  • 両面パターニングプロセスを用いたBSCCO固有ジョセフソン接合素子作製               
    加本 泰生; 島影 尚
    第31 回電気学会茨城支所研究発表会, 02 Dec. 2023, 電気学会東京支部茨城支所
    20231202, 20231202
  • BSCCO固有ジョセフソン接合作製における各プロセスの精査               
    向坂 孝仁; 島影 尚
    第31 回電気学会茨城支所研究発表会, 02 Dec. 2023, 電気学会東京支部茨城支所
    20231202, 20231202
  • Bi‐2212イントリンシックジョセフソン接合における電流–電圧測定系の構築               
    益子 拓人; 加本 泰生; 向坂 孝仁; 島影 尚
    第31 回電気学会茨城支所研究発表会, 02 Dec. 2023, 電気学会東京支部茨城支所
    20231202, 20231202
  • Bi2212イントリンシック接合作製における希塩酸改質法のプロセスパラメータ依存性               
    佐藤 光輝; 島影 尚
    第31 回電気学会茨城支所研究発表会, 02 Dec. 2023, 電気学会東京支部茨城支所
    20231202, 20231202
  • 電流バイアスされたコプレーナライン共振器のマイクロ波特性評価               
    堀口 拓郎; 島影 尚
    第31 回電気学会茨城支所研究発表会, 02 Dec. 2023, 電気学会東京支部茨城支所
    20231202, 20231202
  • コプレーナ伝送線路により形成された共振器の周波数特性評価               
    赤岡 仁; 島影 尚
    第31 回電気学会茨城支所研究発表会, 02 Dec. 2023, 電気学会東京支部茨城支所
    20231202, 20231202
  • 異方性ウェットエッチングを用いてSi基板上に作製したモスアイ構造の評価               
    夜久 赳土; 島影 尚; 川上 彰
    第31 回電気学会茨城支所研究発表会, 02 Dec. 2023, 電気学会東京支部茨城支所
    20231202, 20231202
  • 中赤外領域でのフォトン検出を目指したスロットアンテナのシミュレーション評価               
    本田 晃久; 島影 尚; 川上 彰
    第31 回電気学会茨城支所研究発表会, 02 Dec. 2023, 電気学会東京支部茨城支所
    20231202, 20231202
  • 中赤外光検出器作製に向けたスロットアンテナのシミュレーション評               
    小野 佑太; 島影 尚; 川上 彰
    第31 回電気学会茨城支所研究発表会, 02 Dec. 2023, 電気学会東京支部茨城支所
    20231202, 20231202
  • マイクロ波伝送特性を利用したYBCO薄膜コプレーナ線路のカイネティックインダクタンス評価               
    小谷 怜、島影 尚
    第30 回茨城支所研究発表会, 17 Dec. 2022, 電気学会東京支部茨城支所
    20221217, 20221217
  • 希塩酸改質法により作製したBSCCO固有ジョセフソン接合のマイクロ波応答特性評価               
    鈴木誠弘、島影 尚
    第30 回茨城支所研究発表会, 17 Dec. 2022, 電気学会東京支部茨城支所
    20221217, 20221217
  • 希塩酸改質法によるBSCCO固有ジョセフソン接合の作製及び特性評価               
    安保一真、鈴木誠弘、島影 尚
    第30 回茨城支所研究発表会, 17 Dec. 2022, 電気学会東京支部茨城支所
    20221217, 20221217
  • 直流電流バイアス可能なコプレーナライン共振器の設計と作製               
    堀口拓郎、小谷怜、島影 尚
    第30 回茨城支所研究発表会, 17 Dec. 2022, 電気学会東京支部茨城支所
    20221217, 20221217
  • コプレーナ伝送線路上に作製された共振器の伝送線路特性               
    赤岡仁、小谷怜、島影 尚
    第30 回茨城支所研究発表会, 17 Dec. 2022, 電気学会東京支部茨城支所
    20221217, 20221217
  • COMSOLシミュレーションによるツインスロットアンテナの特性評価               
    小野佑太、島影尚、川上彰
    第30 回茨城支所研究発表会, 17 Dec. 2022, 電気学会東京支部茨城支所
    20221217, 20221217
  • BSCCO固有ジョセフソン接合を用いたSQUID素子作製の検討               
    加本泰生、鈴木誠弘、島影尚
    第30 回茨城支所研究発表会, 17 Dec. 2022, 電気学会東京支部茨城支所
    20221217, 20221217
  • 中赤外光ナノアンテナのアレー化による指向性評価               
    長塚悠斗、川上彰、島影尚
    第30 回茨城支所研究発表会, 17 Dec. 2022, 電気学会東京支部茨城支所
    20221217, 20221217
  • 中赤外光検出の効率向上を目指したモスアイ構造の評価               
    夜久赳土、川上彰、島影尚
    第30 回茨城支所研究発表会, 17 Dec. 2022, 電気学会東京支部茨城支所
    20221217, 20221217
  • 抵抗シャント型BSCCO固有ジョセフソン接合の作製と評価               
    陳俊全、島影尚
    第30 回茨城支所研究発表会, 17 Dec. 2022, 電気学会東京支部茨城支所
    20221217, 20221217
  • イオンビームエッチングによるBSCCO固有ジョセフソン接合の作製と特性評価               
    向坂孝仁、鈴木誠弘、島影尚
    第30 回茨城支所研究発表会, 17 Dec. 2022, 電気学会東京支部茨城支所
    20221217, 20221217
  • RSJモデルを用いたジョセフソン接合の電流電圧特性シミュレーション               
    劉俊毅、島影尚
    第30 回茨城支所研究発表会, 17 Dec. 2022, 電気学会東京支部茨城支所
    20221217, 20221217
  • カイネティックインダクタンス測定へ向けたYBCOコプレーナ線路のマイクロ波伝送特性               
    小谷 怜、島影 尚
    第29 回茨城支所研究発表会, 11 Dec. 2021, 電気学会東京支部茨城支所
    20211211, 20211211
  • 抵抗シャントされたBSCCO固有ジョセフソン接合の特性評価               
    世古 貴裕、島影 尚
    第29 回茨城支所研究発表会, 11 Dec. 2021, 電気学会東京支部茨城支所
    20211211, 20211211
  • YBCO薄膜を用いたマイクロ波帯共振器の作製および非線形特性評価               
    大垣 孝太、島影 尚
    第29 回茨城支所研究発表会, 11 Dec. 2021, 電気学会東京支部茨城支所
    20211211, 20211211
  • テラヘルツ波発振器及び検出器としてのBSCCO固有ジョセフソン接合作製               
    鈴木 誠弘、島影 尚
    第29 回茨城支所研究発表会, 11 Dec. 2021, 電気学会東京支部茨城支所
    20211211, 20211211
  • 希塩酸改質法によるBSCCO固有ジョセフソン接合の作製プロセス依存性               
    木村 翼、世古 貴裕、鈴木 誠弘、島影 尚
    第29 回茨城支所研究発表会, 11 Dec. 2021, 電気学会東京支部茨城支所
    20211211, 20211211
  • 赤外光ナノアンテナアレーの指向性シミュレーション評価               
    片岡 知弥、島影 尚、川上 彰
    第29 回茨城支所研究発表会, 11 Dec. 2021, 電気学会東京支部茨城支所
    20211211, 20211211
  • 誘電体基板への赤外光入射率向上に向けたモスアイ構造の検討               
    松本 祐太、島影 尚、川上 彰
    第29 回茨城支所研究発表会, 11 Dec. 2021, 電気学会東京支部茨城支所
    20211211, 20211211
  • 共振構造を付したコプレーナ線路の伝送特性               
    杉山 空央、大垣 孝太、小谷 怜、島影 尚
    第29 回茨城支所研究発表会, 11 Dec. 2021, 電気学会東京支部茨城支所
    20211211, 20211211
  • シャント抵抗による弱結合型BSCCO固有ジョセフソン接合作製               
    世古貴裕、島影尚
    第28 回茨城支所研究発表会, 06 Feb. 2021, 電気学会東京支部茨城支所
    20210206, 20210206
  • YBCO薄膜を用いたマイクロ波帯共振器の作製および非線形特性評価の研究               
    大垣孝太、島影尚
    第28 回茨城支所研究発表会, 06 Feb. 2021, 電気学会東京支部茨城支所
    20210206, 20210206
  • 中赤外領域におけるマイクロストリップ線路の検討               
    堀川隼世、川上彰、島影尚
    電子情報通信学会 研究会発表会, 26 Mar. 2020, 電子情報通信学会
    20200326, 20200326
  • BSCCO固有ジョセフソン接合の外部磁場による臨界電流変調特性               
    佐久間由哲、島影 尚
    第29 回茨城支所研究発表会, 07 Dec. 2019, 電気学会東京支部茨城支所
    20191207, 20191207
  • 共振器構造を持つ超伝導伝送線路の電磁波伝送シミュレーション               
    齊藤祐希、島影 尚
    第29 回茨城支所研究発表会, 07 Dec. 2019, 電気学会東京支部茨城支所
    20191207, 20191207
  • 超電導パラメトリック増幅機構に及ぼすカイネティックインダクタンスの電流非線形性               
    中村弦太郎、島影 尚
    第29 回茨城支所研究発表会, 07 Dec. 2019, 電気学会東京支部茨城支所
    20191207, 20191207
  • 固有ジョセフソン接合を用いたテラヘルツ波放射実験のための接合作製               
    姉帯駿、大内琢郎、島影 尚
    第29 回茨城支所研究発表会, 07 Dec. 2019, 電気学会東京支部茨城支所
    20191207, 20191207
  • Ag薄膜を保護層としたYBCO伝送線路作製プロセスの評価               
    石田亮、後藤隆志、島影 尚
    第29 回茨城支所研究発表会, 07 Dec. 2019, 電気学会東京支部茨城支所
    20191207, 20191207
  • MgO基板上の窒化ニオブチタン薄膜カイネティックインダクタンスの電流非線形性               
    小松源; 竹下啓太; 齊藤敦; 島影尚; 寺井弘高; 武田正典
    第66回応用物理学会春季学術講演会, 10 Mar. 2019, 応用物理学会
  • Measurements of phase shifts in YBCO transmission lines for evaluation of kinetic inductances               
    石田亮、後藤隆志、島影尚、武田正典
    The 13th International Superconductivity Symposium, 14 Dec. 2018, International Superconductivity Symposium
  • BSCCO固有ジョセフソン接合素子による電磁波放射実験               
    姉帯駿; 大内琢郎; 島影尚
    第26回電気学会東京支部茨城支所研究発表会, 17 Nov. 2018
  • BSCCO固有ジョセフソン接合外部磁場応答特性の測定系構築と評価               
    佐久間由哲; 島影尚
    第26回電気学会東京支部茨城支所研究発表会, 17 Nov. 2018
  • YBCO超伝導パラメトリック増幅器動作に向けた伝送線路変調構造のシミュレーション               
    藤野将太; 後藤隆志; 武田正典; 島影 尚
    第26回電気学会東京支部茨城支所研究発表会, 17 Nov. 2018
  • YBCO伝送線路伝搬特性と位相変化量の測定実験               
    石田亮; 後藤隆志; 島影尚; 武田正典
    第26回電気学会東京支部茨城支所研究発表会, 17 Nov. 2018
  • 超伝導ジョセフソン接合の高周波応答特性評価に向けた測定系の構築               
    高橋優; 島影尚
    第26回電気学会東京支部茨城支所研究発表会, 17 Nov. 2018
  • 中赤外フェーズドアレイアンテナの設計と作製               
    更屋秀人; 川上彰; 堀川準世; 島影尚
    第79回応用物理学会秋季学術講演会, 20 Sep. 2018, 応用物理学会
  • 中赤外領域におけるコプレーナ線路の特性評価               
    堀川隼世; 川上彰; 島影尚
    第79回応用物理学会秋季学術講演会, 19 Sep. 2018, 応用物理学会
  • 固有ジョセフソン接合による電磁波放射実験               
    姉帯駿; 大内琢郎; 島影尚
    第79回応用物理学会秋季学術講演会, 19 Sep. 2018, 応用物理学会
  • YBCO薄膜コプレーナ線路における位相変化量の測定実験               
    石田亮; 後藤隆志; 島影尚; 武田正典
    第79回応用物理学会秋季学術講演会, 19 Sep. 2018, 応用物理学会
  • NbTiN薄膜における力学的インダクタンス非線形性の線幅依存性               
    竹下啓太; 前田瞳; 齊藤敦; 島影尚; 寺井弘高; 武田正典
    第79回応用物理学会秋季学術講演会, 19 Sep. 2018, 応用物理学会
  • Mid Infrared Superconducting Hot Electron Bolometer Mixers with nanoantennas               
    川上彰; 島影尚; 堀川隼世; 兵頭政春; 齋藤伸吾; 田中秀吉; 鵜澤佳徳
    19th Coherent Laser Radar Conference, 20 Jun. 2018, 2018 Coherent Laser Radar Conference
  • 中赤外超伝導ホットエレクトロンボロメータミキサの評価               
    川上彰; 島影尚; 堀川隼世; 田中秀吉; 鵜澤佳徳
    電子情報通信学会超伝導エレクトロニクス研究会, 20 Apr. 2018, 電子情報通信学会
  • 中赤外超伝導ホットエレクトロンボロメータミキサの特性評価               
    川上彰; 島影尚; 堀川隼世; 田中秀吉; 鵜澤佳徳
    第65回応用物理学会春季学術講演会, 19 Mar. 2018, 応用物理学会
  • BSCCO固有ジョセフソン接合素子を用いたTHz波発振実験               
    大内琢郎; 日澤光紘; 島影尚
    第25回電気学会東京支部茨城支所研究発表会, 18 Nov. 2017
  • 高温超伝導ジョセフソン接合作製に向けたYBCO薄膜の特性評価               
    高橋優; 島影尚
    第25回電気学会東京支部茨城支所研究発表会, 18 Nov. 2017
  • YBCOパラメトリック増幅器の実現に向けたカイネティックインダクタンス評価実験               
    後藤隆志; 武田正典; 島影尚
    第25回電気学会東京支部茨城支所研究発表会, 18 Nov. 2017
  • YBCO薄膜を用いた超伝導進行波パラメトリック増幅器のシミュレーション               
    藤野将太; 後藤隆志; 武田正典; 島影 尚
    第25回電気学会東京支部茨城支所研究発表会, 18 Nov. 2017
  • 超伝導中赤外光検出器用アンテナの検討ⅠI               
    堀川 隼世; 川上 彰; 兵頭 政春; 島影 尚
    第78回応用物理学会秋季学術講演会, 06 Sep. 2017, 応用物理学会
  • 高誘電率基板を用いるカイネティックインダクタンス増幅器の検討               
    前田瞳; 小嶋崇文; 齊藤敦; 島影尚; 寺井弘高; 武田正典
    第78回応用物理学会秋季学術講演会, 06 Sep. 2017, 応用物理学会
  • YBCO薄膜コプレーナ線路におけるカイネティックインダクタンス評価               
    後藤隆志; 武田正典; 島影尚
    第78回応用物理学会秋季学術講演会, 06 Sep. 2017, 応用物理学会
  • 超伝導進行波パラメトリック増幅器の位相整合に関するシミュレーション               
    藤野将太; 後藤隆志; 武田正典; 島影尚
    第78回応用物理学会秋季学術講演会, 06 Sep. 2017, 応用物理学会
  • ナノアンテナ結合型中赤外ホットエレクトロンボロメータミキサの検討               
    川上彰; 島影尚; 堀川隼世; 兵頭政春; 齋藤伸吾; 田中秀吉; 鵜澤佳徳
    第 35 回レーザセンシング シンポジウム, 31 Aug. 2017, レーザ・レーダ研究会
  • 高周波応用に向けた希塩酸改質による固有ジョセフソン接合作製               
    高谷寛; 島影尚
    第64回応用物理学会春季学術講演会, 16 Mar. 2017, 応用物理学会
  • YBCO薄膜コプレーナ線路における非線形カイネティックインダクタンスの測定実験               
    後藤隆志; 武田正典; 島影尚
    第64回応用物理学会春季学術講演会, 15 Mar. 2017, 応用物理学会
  • 窒化ニオブチタン薄膜における磁場侵入長の電流依存性               
    前田瞳; 武田正典; 牧瀬圭正; 小嶋崇文; 島影尚; 寺井弘高
    第64回応用物理学会春季学術講演会, 15 Mar. 2017, 応用物理学会
  • 中赤外超伝導ホットエレクトロンボロメータミキサの検討               
    川上 彰; 島影 尚; 堀川 隼世; 兵頭 政春; 齋藤伸吾; 田中秀吉; 鵜澤佳徳
    電子情報通信学会超伝導エレクトロニクス研究会, 19 Jan. 2017, 電子情報通信学会
  • YBCOを用いた超伝導パラメトリック増幅器の利得算出               
    後藤隆志; 島影尚; 齋藤伸吾; 武田正典
    第24回電気学会東京支部茨城支所研究発表会, 17 Dec. 2016
  • BSCCO固有ジョセフソン接合を用いたテラヘルツ発振素子の特性評価               
    大内琢郎; 日澤光紘; 島影尚
    第24回電気学会東京支部茨城支所研究発表会, 17 Dec. 2016
  • 希塩酸改質を用いたBSCCO固有ジョセフソン接合の作製               
    高谷寛; 島影尚
    第24回電気学会東京支部茨城支所研究発表会, 17 Dec. 2016
  • GHz帯電磁波照射によりジョセフソン接合からのカオス発生シミュレーション               
    日渡涼; 田村幸英; 島影尚
    第24回電気学会東京支部茨城支所研究発表会, 17 Dec. 2016
  • 中赤外領域における超伝導検出器付きナノアンテナの指向性評価               
    小原涼輔; 島影尚; 堀川隼世; 川上彰
    第24回電気学会東京支部茨城支所研究発表会, 17 Dec. 2016
  • 3THz帯及び中赤外超伝導ホットエレクロンボメータの開発               
    川上 彰; 入交 芳久; 落合 啓; 島影 尚; 堀川 隼世; 兵頭 政春; 齋藤伸吾; 田中秀吉; 鵜澤佳徳; 寳迫 巌
    日本学術振興会超伝導エレクトロニクス146委員会 第9回センシングシステム分科会 第13回通信・情報処理分科会 合同研究会, 24 Nov. 2016, 電子情報通信学会
  • Superconducting hot-electron bolometers with a twin-slot nano-antenna for mid-infrared operation               
    川上 彰; 島影 尚; 堀川 隼世; 兵頭 政春; 齋藤伸吾; 田中秀吉; 鵜澤佳徳
    1st Asia ICMC and CSSJ 50th Anniversary Conference, 09 Nov. 2016, Asian ICMC
  • IJJ 素子からのテラヘルツ波放射観測実験               
    大内 琢郎; 日澤 光紘; 島影 尚
    第77回応用物理学会秋季学術講演会, 14 Sep. 2016, 応用物理学会
  • ジョセフソン接合からのカオス発生シミュレーションにおける素子パラメータ依存性               
    日渡 涼; 田村 幸英; 島影 尚
    第77回応用物理学会秋季学術講演会, 14 Sep. 2016, 応用物理学会
  • YBCO薄膜を用いたパラメトリック増幅器の検討               
    後藤 隆志; 木村 寛太; 島影 尚; 武田 正典
    第77回応用物理学会秋季学術講演会, 14 Sep. 2016, 応用物理学会
  • 超伝導中赤外光検出器用アンテナの検討Ⅰ               
    堀川 隼世; 川上 彰; 兵頭 政春; 島影 尚
    第77回応用物理学会秋季学術講演会, 14 Sep. 2016, 応用物理学会
  • ツインスロットアンテナを用いた60THz帯超伝導ホットエレクトロンボロメータ               
    川上彰; 島影尚; 堀川隼世; 兵頭政春; 齋藤伸吾; 田中秀吉
    テラヘルツ応用システム研究会, 15 Jul. 2016, テラヘルツ応用システム時限研究専門委員会, [Invited]
  • ナノアンテナを用いた超伝導中赤外光検出器の光応答特性               
    川上彰; 島影尚; 堀川隼世; 兵頭政春; 田中秀吉
    第63回応用物理学会春季学術講演会, 21 Mar. 2016, 応用物理学会
  • GHz帯電磁波を照射されたジョセフソン接合におけるカオスシミュレーション               
    日渡涼; 田村幸英; 島影 尚
    第63回応用物理学会春季学術講演会, 20 Mar. 2016, 応用物理学会
  • 中赤外光検出器アンテナの検出角度依存性の評価               
    小原涼輔; 島影尚; 堀川隼世; 川上彰
    第63回応用物理学会春季学術講演会, 20 Mar. 2016, 応用物理学会
  • 中赤外光検出器の高周波化に向けたスロットアンテナの検討               
    堀川隼世; 川上彰; 兵頭政春; 島影尚
    第63回応用物理学会春季学術講演会, 20 Mar. 2016, 応用物理学会
  • 中間赤外超伝導ホットエレクトロンボロメータの検討               
    川上彰; 島影尚; 堀川隼世; 兵頭正春; 田中秀吉; 鵜澤佳徳
    第16回ミリ波サブミリ波受信機ワークショップ, 07 Mar. 2016, 応用物理学会
  • 中赤外光検出器アンテナの指向性評価システムの構築               
    小原涼輔; 島影尚; 堀川隼世; 川上彰
    第23回電気学会東京支部茨城支所研究発表会, 28 Nov. 2015
  • THz発振器作製に向けたBSCCO固有ジョセフソン接合の特性評価               
    日澤光紘; 坪内恒祐; 島影尚
    第23回電気学会東京支部茨城支所研究発表会, 28 Nov. 2015
  • MgO基板上に作製したYBCO薄膜による細線作製とその特性評価               
    木村寛太; 野地亮平; 島影尚; 武田正典
    第23回電気学会東京支部茨城支所研究発表会, 28 Nov. 2015
  • マイクロ波電磁波を照射されたジョセフソン接合からのカオス発振の評価               
    日渡涼; 田村幸英; 島影尚
    第23回電気学会東京支部茨城支所研究発表会, 28 Nov. 2015
  • アンテナ付き中赤外光検出器の高周波化に向けたナノアンテナの検討               
    堀川隼世; 川上彰; 兵頭政春; 島影尚
    第76回応用物理学会秋季学術講演会, 14 Sep. 2015, 応用物理学会
  • 中赤外光検出器アンテナの検出角度依存性特性評価システムの構築               
    小原涼輔; 島影尚; 川上彰; 堀川隼世
    第76回応用物理学会秋季学術講演会, 14 Sep. 2015, 応用物理学会
  • BSCCO-IJJ素子の特性評価とテラヘルツ波発振の測定系構築               
    日澤光紘; 坪内恒祐; 島影尚
    第76回応用物理学会秋季学術講演会, 14 Sep. 2015, 応用物理学会
  • ツインスロットアンテナ付超伝導中赤外光検出器の応答特性               
    川上彰; 島影尚; 堀川隼世; 兵頭政春; 田中秀吉
    第76回応用物理学会秋季学術講演会, 14 Sep. 2015, 応用物理学会
  • 60 THz Hot Electron Bolometers with Nano-Antenna               
    A. Kawakami; J. Horikawa; H. Shimakage; M. Hyodo; S. Tanaka; Y. Uzawa
    12th EUropean Conference on Applied Superconductivity (EUCAS2015), 07 Sep. 2015, EUCAS2015
  • 中赤外マイクロストリップ線路の位相定数評価               
    川上彰; 堀川隼世; 兵頭政春; 田中秀吉; 武田正典; 島影尚
    第62回応用物理学会春季学術講演会, 13 Mar. 2015, 応用物理学会
  • 単結晶NbTiN薄膜の超伝導カイネティックインダクタンス非線形性               
    武田正典; 小嶋崇文; 齊藤敦; 牧瀬圭正; 鵜澤佳徳; 齋藤伸吾; 島影尚
    第62回応用物理学会春季学術講演会, 12 Mar. 2015, 応用物理学会
  • ナノアンテナを用いた超伝導中赤外光検出器の検討               
    川上彰; 堀川準世; 兵頭政春; 田中秀吉; 武田正典; 島影尚
    電子情報通信学会電子情報通信学会, 22 Jan. 2015, 電子情報通信学会
  • 単結晶窒化ニオブチタン薄膜コプレーナ線路におけるカイネティックインダクタンス非線形性の評価               
    武田正典; 小嶋崇文; 齊藤敦; 牧瀬圭正; 鵜澤佳徳; 齋藤伸吾; 島影尚
    電子情報通信学会電子情報通信学会, 22 Jan. 2015, 電子情報通信学会
  • CeO2バッファ層を用いたAl2O3基板上への高品質Bi-2212薄膜作製               
    岩本恵祐; 島影尚
    第22回電気学会東京支部茨城支所研究発表会, 22 Nov. 2014
  • BSCCO高温超伝導体を利用した固有ジョセフソン接合の特性評価               
    日澤光紘; 島影尚
    第22回電気学会東京支部茨城支所研究発表会, 22 Nov. 2014
  • 超伝導パラメトリック増幅器へ向けたYBCO細線の作製と特性評価               
    木村寛太; 島影尚
    第22回電気学会東京支部茨城支所研究発表会, 22 Nov. 2014
  • ナノスロットアンテナを用いた超伝導中赤外光検出器の検討               
    堀川隼世; 川上彰; 兵頭政春; 田中秀吉; 武田正典; 島影尚
    第75回応用物理学会秋季学術講演会, 20 Sep. 2014, 応用物理学会
  • CeO2バッファ層を用いたMOD法による高品質Bi-2212 薄膜の作製               
    岩本恵祐; 島影尚; 川上彰; 齊藤敦; 武田正典
    第75回応用物理学会秋季学術講演会, 19 Sep. 2014, 応用物理学会
  • BSCCO-IJJテラヘルツ発振器の特性評価方法の検討               
    日澤光紘; 坪内恒祐; 島影尚
    第75回応用物理学会秋季学術講演会, 18 Sep. 2014, 応用物理学会
  • 進行波型超伝導パラメトリック増幅器開発に向けたカイネティックインダクタンス非線形性の評価               
    武田正典; 小嶋崇文; 齊藤敦; 牧瀬圭正; 島影尚
    第75回応用物理学会秋季学術講演会, 18 Sep. 2014, 応用物理学会
  • Evaluations of chaotic oscillation in Josephson junctions using Lyapunov exponent               
    H. Shimakage; Y. Tamura
    Applied Superconductivity Conference, 14 Aug. 2014, Applied Superconductivity Conference
  • Deposition conditions of CeO2 buffer layers for Bi-2212 thin film fabrication               
    K. Iwamoto; H. Shimakage; A. Kawakami; A. Saito; M. Takeda
    Applied Superconductivity Conference, 12 Aug. 2014, Applied Superconductivity Conference
  • Fabrication of Superconducting Mid-infrared Photo-detectors with Dipole Nanoantennas               
    A. Kawakami; J. Horikawa; M. Hyodo; S. Tanaka; M. Takeda; H; Shimakage
    Applied Superconductivity Conference, 12 Aug. 2014, Applied Superconductivity Conference
  • Design of mid-infrared superconducting detector with phased array nano slot antenna               
    J. Horikawa; A. Kawakami; M. Hyodo; S. Tanaka; M. Takeda; H; Shimakage
    Applied Superconductivity Conference, 12 Aug. 2014, Applied Superconductivity Conference
  • 高品質Bi-2212薄膜作製を目指したCeO2バッファ層製膜条件の最適化               
    岩本恵祐; 島影尚; 川上彰; 齊藤敦; 武田正典
    第61回応用物理学会春季学術講演会, 19 Mar. 2014, 応用物理学会
  • ナノスロットアンテナを用いた超伝導中赤外光検出器の検討               
    堀川隼世; 川上彰; 兵頭政春; 田中秀吉; 武田正典; 島影尚
    第61回応用物理学会春季学術講演会, 18 Mar. 2014, 応用物理学会
  • MOD法によるBi-2212薄膜作製におけるバッファ層製膜条件               
    岩本恵祐; 鈴木渉太; 島影尚; 川上彰; 齊藤敦; 武田正典
    第21回電気学会東京支部茨城支所研究発表会, 24 Nov. 2013
  • リアプノフ指数によるジョセフソン接合のカオス解析               
    田村幸英; 島影尚
    第21回電気学会東京支部茨城支所研究発表会, 24 Nov. 2013
  • 高温超伝導体固有ジョセフソン接合の特性評価               
    日澤光紘; 坪内恒祐; 島影尚
    第21回電気学会東京支部茨城支所研究発表会, 24 Nov. 2013
  • Lyapunov exponent analyses of chaotic oscillations in Josephson junctions               
    M. Tamura; H. Shimakage
    International Superconductivity Symposium, 20 Nov. 2013, International Superconductivity Symposium
  • Evaluation of CeO2-buffer-layer's deposition conditions for Bi-2212 thin films fabricated by MOD method               
    K. Iwamoto; S. Suzuki; H. Shimakage; A. Kawakami; A. Saito; M. Takeda
    International Superconductivity Symposium, 20 Nov. 2013, International Superconductivity Symposium
  • テラヘルツ帯超伝導パラメトリック増幅器実現に向けての材料検討               
    武田正典; 小嶋崇文; 齊藤敦; 島影尚; 廣本宣久
    第23回日本赤外線学会研究発表会, 31 Oct. 2013, 日本赤外線学会
  • Bi-2212薄膜のCeO2バッファ層成膜条件依存性               
    岩本恵祐; 鈴木渉太; 島影尚; 川上彰; 齊藤敦; 武田正典
    第74回応用物理学会学術講演会, 18 Sep. 2013
  • 超伝導中赤外光検出器用スロットアンテナの評価               
    堀川隼世; 川上彰; 兵頭政春; 田中秀吉; 武田正典; 島影尚
    第74回応用物理学会学術講演会, 18 Sep. 2013
  • ジョセフソン接合のカオス発生領域のシミュレーション               
    田村幸英; 島影尚
    第74回応用物理学会学術講演会, 17 Sep. 2013
  • Evaluation of Nano Slot Antenna for Mid-Infrared Detectors               
    J. Horikawa; A. Kawakami; M. Hyodo; S. Tanaka; and H. Shimakage
    The 10th Conference on Lasers andElectro-Optics Pacific Rim,and The 18th OptoElectronics and Communications Conference/ Photonics in Switching 2013, 03 Jul. 2013
  • 中赤外光検出器スロットアンテナの検討               
    堀川隼世; 川上彰; 兵頭政春; 田中秀吉; 島影尚
    第60回応用物理学会春季学術講演会, 29 Mar. 2013, 応用物理学会
  • 有機金属分解法を用いたBi-2212薄膜の超伝導特性               
    鈴木渉太; 島影尚; 川上彰; 齊藤敦; 武田正典
    第60回応用物理学会春季学術講演会, 28 Mar. 2013, 応用物理学会
  • Annealing conditions of Bi2Sr2CaCu2O8+x/CeO2/r-plane sapphire by MOD method               
    S. Suzuki; H. Shimakage; A. Kawakami; A. Saito; M. Takeda
    International Superconductivity Symposium, 05 Dec. 2012, International Superconductivity Symposium
  • RSJモデルによるジョセフソン接合のカオス発生シミュレーション Numerical simulations of generating chaos               
    田村幸英; 島影尚
    第20回電気学会東京支部茨城支所研究発表会, 24 Nov. 2012
  • 高温超伝導体単結晶に内在する固有ジョセフソン接合作製               
    坪内恒祐; 島影尚
    第20回電気学会東京支部茨城支所研究発表会, 24 Nov. 2012
  • MOD法により作製したBi-2212薄膜の超伝導特性評価               
    鈴木渉太; 島影尚; 川上彰; 齊藤敦; 武田正典
    第20回電気学会東京支部茨城支所研究発表会, 24 Nov. 2012
  • RSJモデルによるジョセフソン接合のカオス発生シミュレーション,Numerical simulations of generating chaos               
    田村幸英,島影尚
    第20回電気学会東京支部茨城支所研究発表会, 24 Nov. 2012
  • Characteristics of Bi-2212 thin films on r-cut sapphire with CeO2 buffer layer by a MOD method               
    S. Suzuki; H. Shimakage; A. Kawakami; A. Saito; M. Takeda
    Applied Superconductivity Conference, 07 Oct. 2012, Applied Superconductivity Conference
  • Fabrication of superconducting nanowires using MgB2 thin films               
    Hisashi Shimakage; Zhen Wang
    Applied Superconductivity Conference, 07 Oct. 2012, Applied Superconductivity Conference
  • face-to-faceアニールを導入したMOD法によるBi-2212薄膜の作製               
    鈴木渉太; 島影尚; 川上彰; 齊藤敦; 武田正典
    第73回応用物理学会学術講演会, 13 Sep. 2012
  • face-to-faceアニールを導入したMOD法によるBi-2212薄膜の作製               
    鈴木渉太; 島影尚; 川上彰; 齊藤敦; 武田正典
    第73回応用物理学会学術講演会, 12 Sep. 2012
  • MOD法による Bi2Sr2CaCu2O8/CeO2/r-plane sapphire 薄膜の作製と評価               
    鈴木渉太; 島影尚; 川上彰; 齊藤敦; 武田正典
    2012年春季 第59回 応用物理学関係連合講演会, 16 Mar. 2012
  • MOD法によるBi2Sr2CaCu2O8/CeO2/r-plane sapphire薄膜の作製と評価               
    鈴木渉太、島影尚、川上彰、齊藤敦、武田正典
    2012年春季 第59回 応用物理学関係連合講演会, 16 Mar. 2012
  • MOD法によるBi-2212/sapphire(001)薄膜作製と特性評価               
    鈴木渉太; 島影尚; 川上彰; 齊藤敦; 武田正典
    第19回電気学会東京支部茨城支所研究発表会, 19 Nov. 2011
  • Self-flux法による高品質Bi-2212単結晶の作製               
    坪内恒祐; 島影尚; 川上彰
    第19回電気学会東京支部茨城支所研究発表会, 19 Nov. 2011
  • Fabrication of MgB2 hot electron type detectors               
    Hisashi Shimakagea; M. Takeda; and Z. Wang
    The 6th East Asia Symposium on Superconductor Electronics, 29 Oct. 2011, [Invited]
  • Fabrication of Bi-2212 thin-films on c-plane sapphire substrates using the MOD method               
    S. Suzuki; H. Shimakage; A. Kawakami; A. Saito; M. Takeda
    The 6th East Asia Symposium on Superconductor Electronics, 27 Oct. 2011
  • MOD法によるサフィア基板上へのBi-2212薄膜の作製               
    鈴木渉太; 島影尚; 川上彰; 齊藤敦; 武田正典
    第72回応用物理学会学術講演会, 31 Aug. 2011

Affiliated academic society

  • Apr. 2021 - Present, 電気学会
  • 応用物理学会

Industrial Property Rights

  • 第5051507号, 特願2006-293427, 積層型超伝導接合及びその製造方法
    島影尚、王鎮